Influence of the concentration of Sb2O3 and the viscosity of the precursor solution on the electrical and optical properties of SnO2 thin films produced by the Pechini method

SnO2:Sb multi-layer coatings were prepared by the Pechini method. An investigation was made of the influence of the concentration of Sb2O3 and the viscosity of the precursor solution on the electrical and optical properties of SnO2 thin films. The use of a multi-layer system as an alternative form of increasing the packing and. thus. decreasing porosity proved to be efficient, decreasing the system's resistivity without altering its optical properties. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures

The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Effect of thickness on the electrical and optical properties of Sb doped SnO2 (ATO) thin films

This work reports the preparation and characterization of (SnO2) thin films doped with 7 mol% Sb2O3. The films were prepared by the polymeric precursor method, and deposited by spin-coating, all of them were deposited on amorphous silica substrate. Then, we have studied the thickness effect on the microstrutural, optical and electric properties of these samples. The microstructural characterization was carried out by X-ray diffraction (XRD) and scanning tunneling microscopy (STM). The electrical resistivity measurements were obtained by the van der Pauw four-probe method. UV-visible spectroscopy and ellipsometry were carried out for the optical characterization. The films present nanometric grains in the order of 13 nm, and low roughness. The electrical resistivity decreased with the increase of the film thickness and the smallest measured value was 6.5 x 10(-3) Omega cm for the 988 nm thick film. The samples displayed a high transmittance value of 80% in the visible region. The obtained results show that the polymeric precursor method is effective for the TCOs manufacturing.

The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders

Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved.

Crystallographic, dielectric and optical properties of SrBi2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (PvTi/SiO2/Si), n-type (100)-oriented and p-type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P-r values of 6.24 muC/cm(2) and 31.5 kV/cm for the film annealed at 800 degreesC. The film deposited onto fused silica and treated at 700 degreesC presented around 80 % of transmittance.

Reflux synthesis and hydrothermal processing of ZrO2 nanopowders at low temperature

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Active planar waveguides based on sol-gel Er3+-doped SiO2-ZrO2 for photonic applications: Morphological, structural and optical properties

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Er(3+) doped phosphoniobate glasses and planar waveguides: structural and optical properties

Phosphoniobate glasses with composition (mol%) (100-x) NaPO(3)-xNb(2)O(5) ( x varying from 11 to 33) were prepared and characterized by means of thermal analysis, Fourier transform infrared spectroscopy, Raman scattering and (31)P nuclear magnetic resonance. The addition of Nb(2)O(5) to the polyphosphate base glass leads to depolymerization of the metaphosphate structure. Different colors were observed and assigned as indicating the presence of Nb(4+) ions, as confirmed by electron paramagnetic resonance measurements. The color was observed to depend on the glass composition and melting temperature as well. Er(3+) containing samples were also prepared. Strong emission in the 1550 nm region was observed. The Er(3+4)I(15/2) emission quantum efficiency was observed to be 90% and the quenching concentration was observed to be 1.1 mol%( 1.45 x 10(20) ions cm(-3)). Planar waveguides were prepared by Na(+)-K(+)-Ag(+) ion exchange with Er(3+) containing samples. Optical parameters of the waveguides were measured at 632.8, 543.5 and 1550 nm by the prism coupling technique as a function of the ion exchange time and Ag(+) concentration. The optimized planar waveguides show a diffusion depth of 5.9 mu m and one propagating mode at 1550 nm.

Structure and optical properties of [Ba1-xY2x/3](Zr0.25Ti0.75)O-3 powders

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Denisiuk-type reflection holography display with sillenite crystals for imaging and interferometry of small objects

A novel setup for imaging and interferometry through reflection holography with Bi12TiPO20(BTO) sillenite photorefractive crystals is proposed. A variation of the lensless Denisiuk arrangement was developed resulting in a compact, robust and simple interferometer. A red He-Ne laser was used as light source and the holographic recording occurred by diffusion with the grating vector parallel to the crystal [0 0 1]-axis. In order to enhance the holographic image quality and reduce noise a polarizing beam splitter (PBS) was positioned at the BTO input and the crystal was tilted around the [0 0 1]-axis. This enabled the orthogonally polarized transmission and diffracted beams to be separated by the PBS, providing the holographic image only. The possibility of performing deformation and strain analysis as well as vibration measurement of small objects was demonstrated. (C) 2007 Elsevier B.V. All rights reserved.

Electrical and optical characteristics of SnO2 thin films prepared by dip coating from aqueous colloidal suspensions

Starting from aqueous colloidal suspensions, undoped and Nb5+ doped SnO2 thin films have been prepared by using the dip-coating sol gel process. X-ray diffraction results show that films are polycrystalline with crystallites of average size1-4nm. Decreasing the thickness of the films and increasing the Nb5+ concentration limits the crystallite size growth during firing. Complex impedance measurements reveal capacitive and resistive effects between adjacent crystallites or grains, characteristic of electrical potential barriers. The transfer of charge throughout these barriers determines the macroscopic electrical resistance of the layer. The analysis of the optical absorption spectra shows that the samples present more than 80% of their transmittance in the visible region and the value of the band gap energy increases with decreasing crystallite size. © 1997 Chapman & Hall.

Crystallographic, dielectric and optical properties of SrBi 2Ta2O9 thin films prepared by the polymeric precursor method

Strontium bismuth tantalate thin films were prepared on several substrates (platinized silicon (Pt/Ti/SiO 2 /Si), n -type (100)-oriented and p -type (111)-oriented silicon wafers, and fused silica) by the solution deposition method. The resin was obtained by the polymeric precursor method, based on the Pechini process, using strontium carbonate, bismuth oxide, and tantalum ethoxide as starting reagents. Characterizations by XRD and SEM were performed for structural and microstructural evaluations. The electrical measurements, carried on the MFM configuration, showed P r values of 6.24 μC/cm 2 and 31.5 kV/cm for the film annealed at 800 C. The film deposited onto fused silica and treated at 700 C presented around 80% of transmittance. © 2002 Taylor & Francis.

TL, EPR and optical absorption studies on natural alexandrite compared to natural chrysoberyl

The TL, optical absorption (OA) and EPR properties of natural Brazilian alexandrite and chrysoberyl have been investigated. The TL measurements for natural alexandrite show five peaks between 100 and 450°C, with their emission spectrum having 370 and/or 570 nm components. The intensity of the 320°C TL peak was found to be enhanced with pre-annealing treatment, more prominently above 600°C. The OA and EPR measurements showed that this kind of heat treatment induces the Fe2→ Fe3+ conversion in the natural sample. Chrysoberyl samples exhibited the TL peaks at the same temperatures as alexandrite samples, but the glow curves were more than 200 times less intense than alexandrite ones.

Common architecture for discrete wavelet transform analysis and synthesis with sequential and constant processing elements

This paper adresses the problem on processing biological data such as cardiac beats, audio and ultrasonic range, calculating wavelet coefficients in real time, with processor clock running at frequency of present ASIC's and FPGA. The Paralell Filter Architecture for DWT has been improved, calculating wavelet coefficients in real time with hardware reduced to 60%. The new architecture, which also processes IDWT, is implemented with the Radix-2 or the Booth-Wallace Constant multipliers. Including series memory register banks, one integrated circuit Signal Analyzer, ultrasonic range, is presented.