128 resultados para Illumination subspace


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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Sistemas baseados em redes neurais artificiais fornecem altas taxas de computação devido ao uso de um número massivo de elementos processadores simples. Redes neurais com conexões realimentadas fornecem um modelo computacional capaz de resolver uma rica classe de problemas de otimização. Este artigo apresenta uma nova abordagem para resolver problemas de otimização restrita utilizando redes neurais artificiais. Mais especificamente, uma rede de Hopfield modificada é desenvolvida cujos parâmetros internos são calculados usando a técnica de subespaço válido de soluções. A partir da obtenção destes parâmetros a rede tende a convergir aos pontos de equilíbrio que representam as possíveis soluções para o problema. Exemplos de simulação são apresentados para justificar a validade da abordagem proposta.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Ferroelectric SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si were successfully synthesized by the modified polymeric precursor method. The films were deposited by spin coating and crystallized by rapid thermal annealing in a halogen lamp furnace, followed by postannealing at temperatures ranging from 700 degreesC to 800 degreesC in an oxygen atmosphere. Microstructural and phase evaluations were followed by x-ray diffraction and atomic force microscopy. The films displayed spherical grain structures with a superficial roughness of approximately 3-6 nm. The dielectric constant values were 121 and 248 for films treated at 700 degreesC and 800 degreesC, respectively. The P-E curve showed a voltage shift toward the positive side, which was attributed to crystallization under the halogen illumination. The remanent polarization (2P(r)) and coercive field (E-c) were 7.1 muC/cm(2) and 113 kV/cm, and 18.8 muC/cm(2) and 93 kV/cm for the films treated at 700 degreesC and 800 degreesC, respectively. (C) 2001 American Institute of Physics.

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In the present investigation the locomotor and the metabolic activity of Gymnostreptus olivaceus were studied, using 24-hr cycles at different photoperiods and constant temperature and RH. Locomotor activity was studied by the actography method and was reported as coefficients of nocturnalism [CN (N/N + D). 100]. The results showed a nocturnalism coefficient of 98,71% under normal photoperiod conditions and of 29,58% under inverted photoperiod conditions. In constant illumination, the CN of G. olivaceus was 88,22%, and in constant darkness, its rhythm was close to that of the normal photoperiod (CN = 94,92%). The metabolic activity was studied by manometric Warburg respirometry and lit was reported as mu l O-2 . g(-1). h(-1). The respiratory rate of G. olivaceus under normal photoperiod condition was higher at night than during the day (52,52 x 28,76), coinciding with the pattern of nocturnal locomotor activity of the animal. However, under conditions of inverted photoperiod, the millipede maintained its tendency toward a more intense nocturnal respiratory rate (50,35 x 39,14). Similar behaviours were observed under constant illumination and constant darkness, in which G. olivaceus again presented higher nocturnal respiratory rates than diurnal ones(85,84 x 53,48 and 73,18 x 57,0, respectively). The present experimental data suggests the persistence of an endogenous rhythm where the light may not be an important exogenous synchronizer of the activity of G. olivaceus, because it was insufficient to block the start of the biological clock and the natural tendency of higher nocturnal activities of millipedes, principally when the tests were performed in constant illumination or darkness (free-running tests).

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Tin dioxide (SnO2) thin film photoconductivity spectra were measured for a large temperature range using a deuterium source, the intensity of photocurrent spectra in the range 200-400 nm is temperature dependent, and the photocurrent increases in the ultraviolet even for illumination with photon energies much higher than the bandgap transition. This behavior is related to recombination of photogenerated electron-hole pairs with oxygen adsorbed at grain boundaries, which is consistent with nanoscopic crystallite size of sol-gel deposited films. (c) 2005 Elsevier Ltd. All rights reserved.

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Photoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.

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Economic Dispatch (ED) problems have recently been solved by artificial neural networks approaches. In most of these dispatch models, the cost function must be linear or quadratic. Therefore, functions that have several minimum points represent a problem to the simulation since these approaches have not accepted nonlinear cost function. Another drawback pointed out in the literature is that some of these neural approaches fail to converge efficiently towards feasible equilibrium points. This paper discusses the application of a modified Hopfield architecture for solving ED problems defined by nonlinear cost function. The internal parameters of the neural network adopted here are computed using the valid-subspace technique, which guarantees convergence to equilibrium points that represent a solution for the ED problem. Simulation results and a comparative analysis involving a 3-bus test system are presented to illustrate efficiency of the proposed approach.

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Distribution and seasonal dynamics of freshwater Rhodophyta were investigated in the Preto River basin, located in northwestern São Paulo State, southeastern Brazil. Twenty-two sites were sampled, six monthly during one year, four bimonthly during two years, and 12 twice (hot-rainy and cool-dry seasons) during the study period (May 1989 through March 1991). Red algal representatives were found in 19 sites (86.4%). Four species occurred in the basin with varying frequencies: Batrachospermum delicatulum (54.5%), Compsopogon coeruleus (36.4%), B. bicudoi (13.6%) and B. virgatum (4.5%). In addition, 'Chantransia' stage of the batrachospermalean species was found in 17 sites (77.3%). B. bicudoi, B. virgatum and C. coeruleus occurred only in large stream segments (greater-than-or-equal-to 3-order), generally in the main river, whereas B. delicatulum was more frequent in small streams (less-than-or-equal-to 3-order). The stream variables most closely related to the species distribution in the basin were specific conductance, pH and oxygen. B. bicudoi and B. delicatulum showed a marked seasonality: gametophytes were observed from late fall to early spring, while the 'Chantransia' stage generally occurred throughout the year. C. coeruleus was observed throughout the year in most sites, but the populations were generally more abundant from late fall to early spring. The combination of lower temperature and reduced turbidity resulting in increased illumination to the benthic algae during the dry winter months promotes the gametophytic growth of the batrachospermalean species, whereas current velocity was found to be the most influential stream variable for C. coeruleus. The persistance of the 'Chantransia' stage throughout the year as well as its tolerance to wider environmental conditions are key factors in the efficiency of the batrachospermalean life history strategy in lotic ecosystems.

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Systems based on artificial neural networks have high computational rates due to the use of a massive number of simple processing elements. Neural networks with feedback connections provide a computing model capable of solving a rich class of optimization problems. In this paper, a modified Hopfield network is developed for solving constrained nonlinear optimization problems. The internal parameters of the network are obtained using the valid-subspace technique. Simulated examples are presented as an illustration of the proposed approach.

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Irreversible photoexpansion effect has been observed in amorphous Ga10Ge2S65 glasses when its surface was exposed to light with energy greater than the band gap, 3.52 eV. A volume change of about 5% was reached in bulk samples by controlling illumination time and the laser power density. To understand the atomic scale processes of the photoexpansion effect, extended X-ray absorption fine structure (EXAFS) spectroscopy has been used as a local probe of the germanium environment in the glass samples before and after illumination. Modifications are observed in the average coordination shell around Ge atoms in the illuminated sample compared to the non-illuminated one. For the non-illuminated sample, the Ge coordination shell is described by a distorted tetrahedron of sulfur atoms at around 2.20 Angstrom. After illumination, the EXAFS signal can be explained by introducing an additional contribution to this average environment. Based on an analysis of the EXAFS data we proposed a two-shell model of 0.5 oxygen atoms at 2.01 Angstrom and 3.6 sulfur atoms at a 2.20 Angstrom. The existence of Ge-O bonds in the glass after illumination was confirmed by infrared measurements. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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The development of Te containing nanoscaled, compositionally modulated Te/As2S3 multilayer structures enables the realisation of optical recording in real time with a CW He-Ne laser illumination (lambda=633 nm) with improved recording parameters in comparison with known Se/As2S3 structures. It is established that the efficiency of the recording process depends on the light stimulated interdiffusion and thickness of sub-layers.

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Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance > 85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO2). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage. (C) 2007 Elsevier B.V. All rights reserved.

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Er-doped SnO2 thin films, obtained by sol-gel-dip-coating technique, were submitted to excitation with the 4th harmonic of a Nd:YAG laser (266 nm), at low temperature, and a conductivity decay is observed when the illumination is removed. This decay is modeled by considering a thermally activated cross section of an Er-related trapping center. Besides, grain boundary scattering is considered as dominant for electronic mobility. X-ray diffraction data show a characteristic profile of nanoscopic crystallite material (grain average size approximate to 5 nm) in agreement with this model. Temperature dependent and concentration dependent decays are measured and the capture barrier is evaluated from the model, yielding 100 meV for SnO2:0.1% Er and 148 meV for SnO2:4% Er.