Emprego do método da eletrorresistividade no estudo da contaminação subterrânea do cemitério municipal de Vila Rezende, Piracicaba - SP

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Resistividade do filme depositado via sol-gel e estado de oxidação do dopante Ce na matriz SnO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Prospecção geofísica em ocorrência de cobre localizada na bacia sedimentar do Camaquã (RS)

Estudos de pesquisa mineral são fundamentais para o reconhecimento e a incorporação de novas reservas. Esse trabalho apresenta os resultados de aplicação do método geofísico da eletrorresistividade numa ocorrência mineralizada em carbonatos de cobre, por meio da técnica de caminhamento elétrico em arranjo azimutal. A área de estudos está inserida na bacia sedimentar do Camaquã, formada por um conjunto de unidades estratigráficas sedimentares e vulcanogênicas, onde são descritas diversas ocorrências cupríferas. A presença de azurita e malaquita em fraturas e zonas de maior porosidade em arenito encaixante define a geologia local. Os modelos de inversão revelam anomalias circulares de resistividade moderada para até 25m abaixo da ocorrência aflorante e anomalias de baixa resistividade em profundidades abaixo de 25m, além de áreas adjacentes com alta resistividade. Indicadores de mineralização descritos para ocorrências de cobre estudadas, no âmbito da bacia sedimentar do Camaquã, ocorrem na área de estudos e permitem caracterização em termos de resistividade elétrica. Áreas com silicificação apresentam alta resistividade, enquanto que valores intermediários são atribuídos a zonas com carbonatação e, finalmente, áreas de baixa resistividade, provavelmente, indicam concentrações de sulfetos disseminados.

Relações entre condutividade hidráulica, transmissividade, condutância longitudinal e sólidos totais dissolvidos para o aquífero livre de Caçapava do Sul (RS), Brasil

A água subterrânea é um importante recurso ao abastecimento público, principalmente para comunidades periféricas em grandes cidades ou pequenos municípios, onde a instalação ou prolongamento de sistemas de distribuição são economicamente inviáveis. Estudos voltados à análise da vulnerabilidade de aquíferos são relevantes para subsídio a políticas públicas em saneamento básico e preservação ambiental. Este estudo contou com o cadastro de 23 poços rasos localizados no município de Caçapava do Sul (RS), onde foram realizadas medidas de resistividade elétrica e cargabilidade por meio de geofísica, e medidas diretas de condutividade hidráulica e sólidos totais dissolvidos. A análise estatística dos dados demonstrou diversos graus de correlação entre parâmetros, basicamente condicionados a fatores geológicos como porosidade, permeabilidade e sólidos totais dissolvidos.

SILVER DISSOLUTION ON COPPER-BASED ALLOYS

Electrical resistivity measurements and scanning electron microscopy was used to study the dissolution of silver on Cu-Ag and Cu-Al-Ag alloys. The results seem to indicate that the dissolution temperature is affected by the addition of aluminium.

Geoenvironmental site investigation using different techniques in a municipal solid waste disposal site in Brazil

Different geoenvironmental site investigation techniques to assess contamination from a municipal solid waste disposal site in Brazil are presented here. Superficial geophysical investigation (geoelectrical survey), resistivity piezocone penetration tests (RCPTU), soil samples collected with direct-push samplers and water samples collected from monitoring wells were applied in this study. The application of the geoelectrical method was indispensable to identify the presence and flow direction of contamination plumes (leachate) as well as to indicate the most suitable locations for RCPTU tests and soil and water sampling. Chemical analyses of groundwater samples contributed to a better understanding of the flow of the contaminated plume. The piezocone presented some limitations for tropical soils, since the groundwater level is sometimes deeper than the layer which is impenetrable to the cone, and the soil genesis and unsaturated conditions affect soil behavior. The combined interpretation of geoelectrical measurements and soil and water samplings underpinned the interpretation of RCPTU tests. The interpretation of all the test results indicates that the contamination plume has already overreached the landfill's west-northwest borders. Geoenvironmental laboratory test results suggest that contamination from the solid waste disposal site has been developing gradually, indicating the need for continuous monitoring of the groundwater.

Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition

Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Nanoparticle synthesis of La1-xSrxMnO3 (0.1, 0.2 and 0.3) perovskites

Synthesis of La1-xSrxMnO3 (x = 0.1, 0.2 and 0.3) by homogenous coprecipitation method using urea as precipitant agent Is reported. The particles are smaller than 200 nm after heating at 950 degreesC. Temperature dependence of the electrical resistivity was found to be similar to the reported value for single crystals of these manganites.

Transport and sensors properties of nanostructured antimony-doped tin oxide films

Tin oxide thin films doped with 7 mol% antimony oxide multilayer were prepared by the polymeric precursor method. Morphological characterization revealed films with round-shaped grains, nanometric size (similar to 13 nm), and low roughness. These films display high transmittance (similar to 80%) in the visible range of transmittance spectra, which is desirable for transparent conductive oxide films. Analysis on electrical resistivity versus temperature data showed two different conduction mechanisms toward the temperature range. The gas sensor properties measurement of the thicker thin film revealed good sensibility for the NOx. (c) 2006 Elsevier B.V. All rights reserved.

Deposition of controlled thickness ultrathin SnO2 : Sb films by spin-coating

The technological interest in transparent conductive oxide films (TCOs) has motivated several works in processing techniques, in order to obtain adequate routes to application. In this way, this work describes a new route to obtain antimony-doped tin oxide (ATO) films, based in colloidal dispersions of oxide nanocrystals. The nanoparticles were obtained by a hydrolisis method, using SnCl2 and SbCl3 in ethanolic solutions. The residual halides were removed by dyalisis, obtaining a limpid and transparent colloidal suspension. By this, the method offers the advantage of producing ultrathin films without organic contaminants. This route was employed to produce films with 5, 10, 14, and 18 mol% Sb doping, with thickness ranging from 40 to 70 nm. The physical characterization of the samples showed a uniform layer deposition, resulting in good packing density and high transmittance. A preliminar electrical study confirmed the low electrical resistivity even in the ultrathin films, in such level similar of reported data. The method described is similar in some aspects to layer-by-layer (LbL) techniques, allowing fine control of thickness and interesting properties for ultrathin films, however, with low cost when compared to similar routes.

Structural, microstructural, and transport properties of highly oriented LaNiO3 thin films deposited on SrTiO3(100) single crystal

Electrical conductive textured LaNiO3/SrTiO3 (100) thin films were successfully produced by the polymeric precursor method. A comparison between features of these films of LaNiO3 (LNO) when heat treated in a conventional furnace (CF) and in a domestic microwave (MW) oven is presented. The x-ray diffraction data indicated good crystallinity and a structural orientation along the (h00) direction for both films. The surface images obtained by atomic force microscopy revealed similar roughness values, whereas films LNO-MW present slightly smaller average grain size (similar to 80 nm) than those observed for LNO-CF (60-150 nm). These grain size values were in good agreement with those evaluated from the x-ray data. The transport properties have been studied by temperature dependence of the electrical resistivity rho(T) which revealed for both films a metallic behavior in the entire temperature range studied. The behavior of rho(T) was investigated, allowing to a discussion of the transport mechanisms in these films. (C) 2007 American Institute of Physics.

Changes of microstructure in alpha AgZn during post-deformation annealing after cold-rolling

The annealing processes of deformation-induced defects after cold-rolling to about 30 and 60% thickness reduction were investigated for Ag-21, 23, 28 at% Zn by means of residual electrical resistivity, microhardness, light microscopy and transmission electron microscopy (TEM) Three annealing stages have been detected and consistently interpreted as annealing-out of mainly point defects and their agglomerates (stage I), formation of dislocation cells and recrystallized strain-free grains (stage II) and grain growth (stage III). Further, it is tried to determine the evolution of defect production (point defects and dislocations) during rolling deformation from measured changes of electrical resistivity and microhardness. Copyright (C) 1996 Acta Metallurgica Inc.

Impedance spectroscopy of SnO2: CoO during sintering

SnO2:m mol% CoO (0.5 less than or equal to m less than or equal to 6.0) ceramic specimens were studied by impedance spectroscopy in the 5 Hz-13 MHz frequency range during heating cold-pressed specimens from room temperature to 1250 degrees C. The electrical resistivity during sintering decreases from 4 to 6 orders of magnitude in the 400-1500 K temperature range depending on the amount of CoO. An increase in electrical resistivity in the 570-670 K range is related to the release of adsorbed water. The results for the 970-1500 K show that the higher the amount of the CoO addition, the lower is the temperature at which SnO2:CoO reaches a minimum electrical resistivity. This suggests that oxygen point defects created by dissolution of cobalt ions in the SnO2 lattice are controlling the densification rate of these ceramics.

The effect of N+ ion energy on the properties of ion bombarded plasma polymer films

This work describes the influence of the ion bombardment on the electrical, optical and mechanical properties of polymer films deposited from radio-frequency plasmas of benzene. Irradiations were conducted using N+ at 5 x 10(19) ions/m(2), varying the ion energy, E-0, from 0 to 150 keV. Film elemental composition was determined by Rutherford backscattering spectroscopy. Electrical resistivity and hardness were obtained by the two-point probe and nanoindentation technique, respectively. Ultraviolet-visible spectroscopy was employed to investigate the optical constants of the samples. Etching rate was determined by exposure of the films to reactive oxygen plasmas. Ion bombardment induced gradual loss of H and increase in C and O concentrations with Eo. As a consequence the electrical, optical and mechanical properties were drastically affected. Interpretation of these results is proposed in terms of chain cross-linking and unsaturation. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Thermal behavior of the Cu-22.55 at.%Al alloy with small Ag additions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)