Corrosion resistance of 2024 aluminum alloy coated with plasma deposited a-C:H:Si:O films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Al-based anodic oxide films structure observation using field emission gun scanning electron microscopy

In the present work, the anodic oxide films of Al, Al-Cu 4.5% and Al-Si 6.5% alloys are formed using direct and pulse current. In the case of Al-Cu and Al-Si alloys, the electrolyte used contains sulfuric acid and oxalic acid, meanwhile for Al the electrolyte contains sulfuric acid only. Al-Cu alloy was submitted to a heat treatment in order to decrease the effect of inter metallic phase theta upon the anodic film structure. Fractured samples were observed using a field emission gun scanning electron microscope JSM-6330F at (LME)/Brazilian Synchrotron Light Laboratory (LNLS), Campinas, SP, Brazil. The oxide film images enable evaluation of the pore size and form with a resolution similar to the transmission electron microscope (TEM) resolution. It is also observed that the anodizing process using pulse current produces an irregular structure of pore walls, and by direct cur-rent it is produced a rectilinear pore wall. (c) 2005 Elsevier B.V. All rights reserved.

Effects of strontium and calcium simultaneous substitution on electrical and structural properties of Pb1-x-y Ca (x) Sr (y) TiO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis, optical and ferroelectric properties of PZT thin films: experimental and theoretical investigation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Thin films generated by plasma immersion ion implantation and deposition of hexamethyldisilazane mixed with nitrogen in different proportions

In this work, it was used a plasma system composed of a cylindrical stainless steel reactor, a radio-frequency (13.56MHz) power source fixed at either 25 W or 70 W, a power source with a negative bias of 10kV and a 100Hz pulse. The system worked at an operational pressure of 80mTorr which consisted of varying concentrations of the monomer HMDSN and gaseous nitrogen in ratios: HMDSN (mTorr)/nitrogen (mTorr) from 70/10 to 20/60 in terms of operational pressure. The structural characterization of the films was done by FTIR spectroscopy. Absorptions were observed between 3500 cm(-1) to 3200 cm(-1), 3000 cm(-1) to 2900 cm(-1), 2500 cm(-1) to 2000 cm(-1), 1500 cm(-1) to 700 cm(-1), corresponding, respectively, to OH radicals, C-H stretching bonds in CH2 and CH3 molecules, C-N bonds, and finally, strain C-H bonds, Si-CH3 and Si-N groups, for both the 70 W and the 25 W. The contact angle for water was approximately 100 degrees and the surface energy is near 25mJ/m(2) which represents a hydrophobic surface, measured by goniometric method. The aging of the film was also analyzed by measuring the contact angle over a period of time. The stabilization was observed after 4 weeks. The refractive index of these materials presents values from 1.73 to 1.65 measured by ultraviolet-visible technique.

Effect of oxidizing atmosphere on the electrical properties of SrBi4Ti4O15 thin films obtained by the polymeric precursor method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structure and microstructure of PbTiO3 thin films obtained from hybrid chemical method

PbTiO3 thin films were deposited on Si(100) via hybrid chemical method and crystallized between 400 and 700 degreesC to study the effect of the crystallization kinetics on structure and microstructure of these materials. X-ray diffraction (XRD) technique was used to study the structure of the crystallized films. In the temperature range investigated, the lattice strain (c/a) presented a maximum value (c/a = 1.056) for film crystallized at 600 degreesC for I h. Atomic force microscopy (AFM) was used in investigation of the microstructure of the films. The rms roughness of the films linearly increases with temperature and ranged from 1.25 to 9.04 nm while the grain sizes ranged from 130.6 to 213.6 nm. Greater grain size was observed for film crystallized at 600 degreesC for 1 h. (C) 2002 Elsevier B.V. S.A. All rights reserved.

Effect of the excess of bismuth on the morphology and properties of the BaBi2Nb2O9 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dielectric properties of Ca(Zr0.05Ti0.95)O-3 thin films prepared by chemical solution deposition

Ca(Zr0.05Ti0.95)O-3 (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of 2.5 mu C/cm(2), and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about 4.6 x 10(-8) A/cm(2) at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields. (c) 2006 Elsevier B.V. All rights reserved.

Potassium niobate thin films prepared through polymeric precursor method

Thin films of potassium niobate were deposited on (100) Si substrates by the polymeric precursor method (Pechini method). Annealing in static air was performed at 600degrees C for 20 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy (AFM). Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. At 1 MHz, the dielectric constant was 158 and the dissipation factor was 0.11. (C) 2004 Elsevier B.V. All rights reserved.

Effect of precursor solution on the formation of perovskite phase of Pb(Mg-1/Nb-3(2/3))O-3 thin films

Precursor solutions for Pb(Mg1/3Nb2/3)O-3 (PMN) synthesis were obtained by Pechini's method. The influence of the concentration of organic materials on the phase formation has been studied. For this purpose, PMN solutions were prepared with different precursors and were characterized by thermogravimetric and differential thermal analysis. The obtained solutions were deposited onto a Si (100) substrate by dip coating and pre-treated in a hot plate at 300 degreesC for 1 h. The films were annealed at 600, 700, 800 and 900 degreesC for 1 h and characterized by X-ray diffraction. The perovskite phase was formed after annealing at 600 and 700 degreesC when the solution of PMN was prepared with a lower amount of organic material and starting with mobium oxide. By increasing the temperature to 800 or 900 degreesC, only the formation of pyrochlore phase was observed. With the solution prepared from mobium ethoxide, only the presence of pyrochlore phase was observed independently of the annealing temperature. (C) 2002 Elsevier B.V. B.V. All rights reserved.

The influence of thermal treatment on the preparation of PNM and PMN-PT thin films

Ferroelectric thin films belong to a class of materials with great technological importance in optic fibers, micro-electromechanical systems, and microprocessors and computers memories.The (1-x)PbMg1/3Nb2/3O3(x)PbTiO3 (PMN-PT) thin films, with x=0, 0.1, 0.35 and 0.5, were prepared by Pechini's process and deposited by spin-coating on Si(100), Pt/Ti/SiO2/Si(100) and quartz substrates. The goal of the present paper is to verify the thermal treatment influence on the perovskite phase formation, which is desirable for these applications. The phase formation was analyzed by X-ray diffraction. The film's surface was characterized by atomic force microscopy to analyze the roughness and the homogeneity. The results of this study indicate that the optimum conditions for obtaining the perovskite phase using a Pt/Ti/SiO2/Si(100) substrate, were drying each deposited layer at 140 degreesC (heating plate), and a final thermal treatment at 600 degreesC for 3 h in a closed system with a lead-rich atmosphere. (C) 2003 Elsevier B.V. All rights reserved.

Electrical properties of lanthanum doped Bi4Ti3O12 thin films annealed in different atmospheres

Pure-and lanthanun doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. Annealing in static air and oxygen atmosphere was performed at 700 degrees C for 2 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy. The dielectric constant and dissipation factor were measured in the frequency region from 1 kHz to 1 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. Films annealed in static air possess a dielectric constant higher than films annealed in oxygen atmosphere due to differences in the grain size, crystallinity and structural defects. A regularly shaped hystereses loop is observed after annealing in static air. The obtained results suggest that the annealing in oxygen atmosphere can increase the trapped charge and the relaxation phenomenon. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Influence of viscosity and ionic concentration on morphology of PLZT thin films

PLZT thin films were prepared by a dip-coating process using Pechini's method. The PLZT solution was obtained from the mixture of the cation solutions. The viscosity of the solution was adjusted in the range of 20-40 cP, while the ionic concentration was adjusted in the range of 0.1 and 0.2 M. PLZT solutions were deposited on Si (1 0 0) substrate with withdrawal speed at 5 mm/min. The coated substrates were thermally treated with heating rate of 1 degreesC/min up to 300 and 5 degreesC/ min up to 650 degreesC in order to obtain homogeneous and crack free films. The influence of viscosity and ionic concentration on crystallization and morphology of PLZT (9/65/35) thin film will be discussed. (C) 2001 Elsevier B.V. B.V. All rights reserved.