Enhanced ferroelectric properties of La-substituted BiFeO3 thin films on LaSrCoO3/Pt/TiO2/SiO2/Si (100) substrates prepared by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of partial crystallization on the mechanical properties and cytotoxicity of bioactive glass from the 3CaO center dot P2O5-SiO2-MgO system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estudo da corrosão de cadinhos de SnO2-ZnO, na fusão de vidros contendo metais pesados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The effect of cooling rate during hydrothermal synthesis of ZnO nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of Hydrothermal Synthesis Conditions and Device Configuration on the Photoresponse of UV Sensors Based on ZnO Nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method

Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.

SAXS and UV-Vis combined to Quick-XAFS monitoring of ZnO nanoparticles formation and growth

Time-resolved X-ray absorption-fine structure (Quick-XAFS) and UV-Vis absorption spectroscopies were combined for monitoring simultaneously the time evolution of Zn-based species and ZnO quantum dot (Qdot) formation and growth during the sol-gel synthesis from zinc oxy-acetate precursor solution. The time evolution of the nanostructural features of colloidal suspension was independently monitored in situ by small angle X-ray scattering (SAXS). In both cases, the monitoring was initialized just after the addition of NaOH solution (B = [OH]/[Zn] = 0.5) to the precursor solution at 40 degrees C. Combined time-resolved Quick-XAFS and UV-Vis data showed that the formation of ZnO colloids from the zinc oxy-acetate consumption achieves a quasi-steady-state chemical equilibrium in less than 200s. Afterwards, the comparison of the ZnO Qdots size and Guinier gyration radius evidences a limited aggregation process coupled to the Qdots growth. The analysis of the experimental results demonstrates that the nanocrystal coalescence and Ostwald ripening control the kinetics of the Qdot growth.

Mechanical properties and dimensional effects of ZnO- and SnO(2)-based varistors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

NiTiO3 nanoparticles encapsulated with SiO2 prepared by sol-gel method

NiTiO3 (NTO) nanoparticles encapsulated with SiO2 were prepared by the sol-gel method resulting on core-shell structure. Changes on isoelectric point as a function of silica were evaluated by means of zeta potential. The NTO nanoparticles heat treated at 600 degrees C were characterized by X-ray diffraction, transmission electron microscopy (TEM) and energy dispersive X-ray analysis. TEM observations showed that the mean size of NTO is in the range of 2.5-42.5 nm while the thickness of SiO2 shell attained 1.5-3.5 nm approximately.

Doping saturation in dye-sensitized solar cells based on ZnO:Ga nanostructured photoanodes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electron Transport in Dye-Sensitized Solar Cells Based on ZnO Nanotubes: Evidence for Highly Efficient Charge Collection and Exceptionally Rapid Dynamics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Comparative electrical behavior at low and high current of SnO(2)- and ZnO-based varistors

The complete I-V characteristics of SnO(2)-based varistors, particularly of the Pianaro system SCNCr consisting in 98.9%SnO(2)+1%CoO+0.05%Nb(2)O(5)+0.05%Cr(2)O(3), all in mol%, have been seldom reported in the literature. A comparative study at low and high currents of the nonohmic behavior of SCNCr- and ZnO-based varistors (modified Matsuoka system) is proposed in this work. The SCNCr system showed higher nonlinearity coefficients in the whole range of measured current. The electrical breakdown field (E(b)) was twice as high for the SCNCr system (5400 V/cm) than for the ZnO varistor (2600 V/cm) due to a smaller average grain size of the former (4.5 mu m) with respect to the latter (8.5 mu m). Nevertheless, we consider that another important factor responsible for the high E(b) in the SCNCr system is the great number of electrically active interfaces (85%) as determined with electrostatic force microscopy (EFM). It was also established that the SCNCr system might be produced in disks of smaller dimensions than that of commercial ZnO-based product, with a 5.0 cm(-1) minimal area-volume (A/V) ratio. The SCNCr reached the saturation current in a short time because of the high resistivity of the grains, which is five times higher than that of the grains in ZnO-based varistors.

ZnO architectures synthesized by a microwave-assisted hydrothermal method and their photoluminescence properties

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Color tunability of intense upconversion emission from Er3+-Yb3+ co-doped SiO2-Ta2O5 glass ceramic planar waveguides

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)