Ferroelectric characteristics of BiFeO3 thin films prepared via a simple chemical solution deposition

BiFeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500 degrees C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500 degrees C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations. (c) 2007 American Institute of Physics.

Active planar waveguides based on sol-gel Er3+-doped SiO2-ZrO2 for photonic applications: Morphological, structural and optical properties

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Broadband NIR Emission in Sol-Gel Er(3+)-Activated SiO(2)-Ta(2)O(5) Glass Ceramic Planar and Channel Waveguides for Optical Application

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural and microstructural characterization of SrBi2(Ta0.5Nb0.48W0.02)(2)O-9 powders

SrBi2(Ta0.5Nb0.48W0.02)(2)O-9 powders (SBTN-W) were prepared by the polymeric precursor method. The influence of annealing temperature on the phase formation and specific surface area was evaluated. TG/DTA associated with X-ray diffraction (XRD) analyses showed the formation of perovskite phase at around 500-600 degrees C. An orthorhombic structure with A21am space group was identified by Rietveld refinement. BET analysis revealed that the specific surface area reduces with increasing thermal annealing. SEM micrographies showed grains in an almost-spherical morphology with the presence of agglomerates. (C) 2006 Elsevier B.V. All rights reserved.

Photoluminescent properties of lead zirconate powders obtained by the polymeric precursor method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural and Spectroscopic Properties of Luminescent Er3+-Doped SiO2-Ta2O5 Nanocomposites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

LiNbO3 thin films prepared from a polymeric precursor method

LiNbO3 thin films were prepared from polymeric precursor method by dip coating. The precursor films, deposited on Si(111) substrates, were heat-treated from 400°C to 900°C in order to study the heat treatment influence on the crystallinity and microstructure of the final film. The X-ray diffraction patterns showed, in particular, that these films crystallize at low temperature (450°C) and present no preferential orientation. The scanning electron microscopy studies showed that the film microstructure is strongly influenced by the annealing temperature. © 1997 Trans Tech Publications.

Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Effect of thermal treatment on the morphology of PLZT thin films prepared from polymeric precursor method

Lead lanthanum zirconate titanate (PLZT) thin films with (9/65/35) stoichiometry were prepared by dip coating from polymeric precursor method. The films deposited on silicon (100) substrates, were thermally treated from 450° to 700°C for 6 hours in order to study the influence of thermal treatment on the crystallinity, microstructure, grain size and roughness of the final film. X-ray diffraction results showed that PLZT phase crystallizes at low temperature (500°C) and present preferential orientation. It was observed by scanning electron microscopy (SEM) that it is possible to obtain dense thin films at temperatures around 650°C. The atomic force microscopy (AFM) studies showed that the grain size and roughness are strongly influenced by the annealing temperature.

Ferroelectric SBN thin films grown by an SBN/Bi2O3 PLD sequential process

Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si(100) using a sequential deposition process from two SBN and Bi2O3 targets. This route allows for bismuth enrichment of the film composition in order to improve the ferroelectric characteristics. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition of films and targets was determined by energy dispersive X-ray spectrometry (EDX). The deposition temperature, which provided well-crystallized layered perovskite SBN phase films in situ, was found to be 700°C. The results were compared with those obtained for SBN films deposited at 400°C and then crystallized ex situ. For an ex situ annealing temperature of 750°C, a remanent polarization value (Pr) of 23.2 μc/cm2 and a coercive field (Ec) of 112 kV/cm were measured. © 2001 Elsevier Science Ltd. All rights reserved.

Influencia del tratamiento térmico en la cristalización y rugosidad de películas delgadas de LiNbO3 depositadas por el método Spin Coating

Lithium niobate (LiNbO3) thin films with 1/1 stoichiometry were prepared by a spin-coating from polymeric precursor method. The films deposited on silicon (100) substrates, were thermally treated from 400° to 600°C for 3 hours in order to study the influence of thermal treatment on the crystallinity, microstructure, grain size and roughness. X-ray diffraction (XRD) results showed that LiNbO3 phase crystallizes at low temperature (400°C). It was observed by scanning electron microscopy (SEM) that it is possible to obtain dense thin films at temperatures around 500°C. The atomic force microscopy (AFM) results showed that the grain size and roughness are strongly influenced by the annealing temperature.

Nucleation and crystallization of titania nanoparticles in silica titania planar waveguides: A study by low frequency Raman scattering

SiO2 (1-x) - TiO2 (x) waveguides, with the mole fraction x in the range 0.07 - 0.20 and thickness of about 0.4 μm, were deposited on silica substrates by a dip-coating technique. The thermal treatments at 700-900°C, used to fully densify the xerogels, produce nucleation of TiO2 nanocrystals even for the lowest TiO2 content. The nucleation of TiO2 nanocrystals and their growth by thermal annealing up to 1300°C were studied by waveguide Raman spectroscopy, for the SiO2 (0.8) - TiO2 (0.2) composition. By increasing the annealing temperature, the Raman spectrum evolves from that typical of the silica-titania glass to that of anatase, but brookite phase is dominant at intermediate temperatures. In the low. frequency region (5-50 cm-1) of the Raman spectra, acoustic vibrations of the nanocrystals are observed. From the measured line shapes, we can deduce the size distribution of the particles. The results are compared with those obtained from the line widths in the X-ray diffraction patterns. Nanocrystals with a mean size in the range 4-20 nm are obtained, by thermal annealing in a corresponding range of 800-1300°C.

Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.

Obtenção e caracterização de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos

Pós-graduação em Engenharia Mecânica - FEG

Reassessment of the potential applications of Eu3+-doped Y2O3 photoluminescent material in ceramic powder form

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)