Chemical deposition of La0.7Ca0.3MnO3±δ films on ceramic substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thin films generated by plasma immersion ion implantation and deposition of hexamethyldisilazane mixed with nitrogen in different proportions

In this work, it was used a plasma system composed of a cylindrical stainless steel reactor, a radio-frequency (13.56MHz) power source fixed at either 25 W or 70 W, a power source with a negative bias of 10kV and a 100Hz pulse. The system worked at an operational pressure of 80mTorr which consisted of varying concentrations of the monomer HMDSN and gaseous nitrogen in ratios: HMDSN (mTorr)/nitrogen (mTorr) from 70/10 to 20/60 in terms of operational pressure. The structural characterization of the films was done by FTIR spectroscopy. Absorptions were observed between 3500 cm(-1) to 3200 cm(-1), 3000 cm(-1) to 2900 cm(-1), 2500 cm(-1) to 2000 cm(-1), 1500 cm(-1) to 700 cm(-1), corresponding, respectively, to OH radicals, C-H stretching bonds in CH2 and CH3 molecules, C-N bonds, and finally, strain C-H bonds, Si-CH3 and Si-N groups, for both the 70 W and the 25 W. The contact angle for water was approximately 100 degrees and the surface energy is near 25mJ/m(2) which represents a hydrophobic surface, measured by goniometric method. The aging of the film was also analyzed by measuring the contact angle over a period of time. The stabilization was observed after 4 weeks. The refractive index of these materials presents values from 1.73 to 1.65 measured by ultraviolet-visible technique.

Deposition of SiOx Thin Films on Y-TZP by Reactive Magnetron Sputtering: Influence of Plasma Parameters on the Adhesion Properties Between Y-TZP and Resin Cement for Application in Dental Prosthesis

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Soft chemical deposition of BiFeO3 multiferroic thin films

BiFeO3 thin films free of secondary phases were obtained by the soft chemical solution on Pt(111)/Ti/SiO2/Si substrates after annealing at 500 degrees C for 2 h. The film grown in the (100) direction presented a remanent polarization P-r of 31 mu C/cm(2) at room temperature. Electrical measurements using both quasistatic hysteresis and pulsed polarization confirm the existence of ferroelectricity with a switched polarization of 60-70 mu C/cm(2), Delta P=(P-*-P). Low leakage conduction and an out-of-plane piezoelectric (d(3)) coefficient of 40 pm/V were obtained by the improvement of preparation technology.

Deposition of controlled thickness ultrathin SnO2 : Sb films by spin-coating

The technological interest in transparent conductive oxide films (TCOs) has motivated several works in processing techniques, in order to obtain adequate routes to application. In this way, this work describes a new route to obtain antimony-doped tin oxide (ATO) films, based in colloidal dispersions of oxide nanocrystals. The nanoparticles were obtained by a hydrolisis method, using SnCl2 and SbCl3 in ethanolic solutions. The residual halides were removed by dyalisis, obtaining a limpid and transparent colloidal suspension. By this, the method offers the advantage of producing ultrathin films without organic contaminants. This route was employed to produce films with 5, 10, 14, and 18 mol% Sb doping, with thickness ranging from 40 to 70 nm. The physical characterization of the samples showed a uniform layer deposition, resulting in good packing density and high transmittance. A preliminar electrical study confirmed the low electrical resistivity even in the ultrathin films, in such level similar of reported data. The method described is similar in some aspects to layer-by-layer (LbL) techniques, allowing fine control of thickness and interesting properties for ultrathin films, however, with low cost when compared to similar routes.

Synthesis of a functionalized europium complex and deposition of luminescent Langmuir-Blodgett (LB) films

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Aerosol Deposition of Ba0.8Sr0.2TiO3 Thin Films

In this work we optimized conditions for aerosol deposition of homogeneous, nano-grained, smooth Ba0.8Sr0.2TiO3 thin films. Investigation involved optimization of deposition parameters, namely deposition time and temperature for different substrates. Solutions were prepared from titanium isopropoxide, strontium acetate and barium acetate. Films were deposited on Si (1 0 0) or Si covered by platinum (Pt (1 1 1) /Ti/SiO2/Si). Investigation showed that the best films were obtained at substrate temperature of 85 degrees C. After deposition films were slowly heated up to 650 degrees C, annealed for 30 min, and slowly cooled. Grain size of BST films deposited on Si substrate were in the range 40-70 nm, depending on deposition conditions, while the same films deposited on Pt substrates showed mean grain size in the range 35-50 nm. Films deposited under optimal conditions were very homogeneous, crack-free, and smooth with rms roughness lower than 4 nm for both substrates.

High-voltage electrophoretic deposition of preferentially oriented films from multiferroic YMn2O5 nanopowders

Processing of the YMn2O5 powder is very challenging, since it decomposes to YMnO3 and Mn3O4 at temperatures close to 1180 °C, while samples consolidation commonly demands high temperatures. The main goal of this work is to investigate a possibility to prepare thick films of YMn2O5, since their deposition generally requires significantly lower temperatures. Multiferroic YMn 2O5 was synthesized by the hydrothermal method from Y(CH3COO)3·xH2O, Mn(CH 3COO)2·4H2O and KMnO4 precursors. XRD, FE-SEM and TEM analysis showed that the obtained powder was monophasic, with orthorhombic crystal structure and columnar particle shape with mean diameter and length of around 20 and 50 nm, respectively. The obtained powder was suspended in isopropyl alcohol with addition of appropriate binder and deflocculant. This suspension was used for electrophoretic deposition of YMn2O5 thick films under the high-voltage conditions and electric fields ranging from 250 to 2125 V/cm. The films obtained at 1000 V/cm and higher electric fields showed good adhesion, particle packing, homogeneity and very low porosity. It was shown that the deposition in extremely high electric fields (KC=2125 V/cm) can influence the crystal orientation of the films, resulting in formation of preferentially oriented films. © 2012 Elsevier Ltd and Techna Group S.r.l.

Electrophoretic deposition of (Zn, Nb)SnO2-films varistor superficially modified with Cr3+

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Innovative low temperature plasma approach for deposition of alumina films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Surface Passivation of Nanoporous TiO2 via Atomic Layer Deposition of ZrO2 for Solid-State Dye-Sensitized Solar Cell Applications

We report here the utilization of atomid layer deposition to passivate surface map states in mosoporous TiO2 nanoparticles for solid state dye sensitized solar cells based on 9,9'-spirobifluorene (spiro-OMeTAD). By depositing ZrO2 films with angstrom-level precision, coating the mesoporous TiO2 produces over a two-fold enhancement in short-circuit current density, as compared to a control device. Impedance spectroscopy measurements provide evidence that the ZrO2 coating reduces recombination lossed at the TiO2/spiro-OMeTAD interface and passivates localized surface states. Low-frequency negative capacitances, frequently observed in nanocomposite solar cells, have been associated with the surface-state mediated charge transfer from TiO2 to the spiro-OMeTAD.

Plasma enhanced chemical vapor deposition of titanium(IV) ethoxide-oxygen-helium mixtures

Thin films were deposited by plasma enhanced chemical vapor deposition from titanium (IV) ethoxide (TEOT)-oxygen-helium mixtures. Actinometric optical emission spectroscopy was used to obtain the relative plasma concentrations of the species H, CH, O and CO as a function of the percentage of oxygen in the feed, R(ox). The concentrations of these species rise with increasing R(ox) and tend to fall for R(ox) greater than about 45%. As revealed by a strong decline in the emission intensity of the actinometer Ar as R(ox) was increased, the electron mean energy or density (or both) decreased as greater proportions of oxygen were fed to the chamber. This must tend to reduce gas-phase fragmentation of the monomer by plasma electrons. As the TEOT flow rate was fixed, however, and since the species H and CH do not contain oxygen, the rise in their plasma concentrations with increasing R(ox) is explained only by intermediate reactions involving oxygen or oxygen-containing species. Transmission infrared (IRS) and X-ray photoelectron (XPS) spectroscopies were employed to investigate film structure and composition. The presence of CH(2), CH(3), C=C, C-O and C=O groups was revealed by IRS. In addition, the presence of C-O and C=O groups was confirmed by XPS, which also revealed titanium in the +4 valence state. The Ti content of the films, however, was found to be much less than that of the monomer material itself. (C) 2007 Elsevier B.V. All rights reserved.

Plasma-deposition of Ag-containing polyethyleneoxide-like coatings

Ag-containing polyethyleneoxide (FEO)-like thin films have been deposited in Radio Frequency Glow Discharges fed with vapors of diethyleneglycol-dimethyl-ether and argon. Proper experimental conditions have been utilized in order to fragment the monomer in the glow and, at the same time, sputter Ag from the silver RF cathode of the reactor, in a way that polyethyleneoxide(PEO)-like coatings with embedded Ag clusters have been deposited at the ground electrode. The composition of the coatings has been investigated by means of different techniques; the plasma process has been investigated by means of Actinometric Optical Emission Spectroscopy. A correlation has been found between the amount of silver embedded in the coatings and that sputtered in the discharge, monitored by actinometry, that could eventually be utilized to control in situ the deposition process.

Crystallization and optical properties of CCTO thin films under pressure influence

CCTO thin films were deposited on Pt(111)/Ti/SiO 2/Si substrates using a chemical (polymeric precursor) and pressure method. The pressure effects on the CCTO thin films were evaluated by XRD, FEG-SEM and optical properties. Pressure films were found to be more homogeneous and dense than chemical deposition films. Pressure also leaded to an increase in the photoluminescence emission; it is suggested that the displacement of Ti in the titanate clusters, favors the charge transference from TiO 6 to [TiO 5V o z], TiO 5V o z] to [CaO 11V o z] and [TiO 5V o z] to [CuO 4] x. The low synthesis temperature used in the pressure method allows the deposition of films on less expensive substrates (i.e. glass, aluminum, polymer and others).

Preparation of films from aluminum acetylacetonate by plasma sputtering

Aluminum acetylacetonate has been reported as a precursor for the deposition of alumina films using different approaches. In this work, alumina-containing films were prepared by plasma sputtering this compound, spread directly on the powered lowermost electrode of a reactor, while grounding the substrates mounted on the topmost electrode. Radiofrequency power (13.56 MHz) was used to excite the plasma from argon atmosphere at a working pressure of 11 Pa. The effect of the plasma excitation power on the properties of the resulting films was studied. Film thickness and hardness were measured by profilometry and nanoindentation, respectively. The molecular structure and chemical composition of the layers were analyzed by Fourier transform infrared spectroscopy and energy dispersive spectroscopy. Surface micrographs, obtained by scanning electron microscopy, allowed the determination of the sample morphology. Grazing incidence X-ray diffraction was employed to determine the structure of the films. Amorphous organic layers were deposited with thicknesses of up to 7 μm and hardness of around 1.0 GPa. The films were composed by aluminum, carbon, oxygen and hydrogen, their proportions being strongly dependent on the power used to excite the plasma. A uniform surface was obtained for low-power depositions, but particulates and cracks appeared in the high-power prepared materials. The presence of different proportions of aluminum oxide in the coatings is ascribed to the different activations promoted in the metalorganic molecule once in the plasma phase. Copyright © 2013 John Wiley & Sons, Ltd. Copyright © 2013 John Wiley & Sons, Ltd.