Scandium-doped AlN 1D hexagonal nanoprisms : a class of room-temperature ferromagnetic materials

Pretty vacancy: The formation energy of Al vacancies in aluminum nitride is decreased by doping with nonmagnetic scandium ions. These vacancies are shown to be the cause of the room-temperature ferromagnetism in the resulting 1D hexagonal nanoprisms of AlN:Sc, a result that is confirmed by first-principles calculations. The doping approach provides a new route to dilute magnetic semiconductor materials.

Combined continuous wave and pulsed plasma modes : For more stable interfaces with higher functionality on metal and semiconductor surfaces

A novel approach to producing improved bio-interfaces by combining continuous wave (CW) and pulsed plasma polymerization (PP) modes is reported. This approach has enabled the generation of stable interfaces with a higher density of primary amine functionality on metal, ceramic and semiconductor surfaces. Heptylamine (HA) was used as the amine-precursor. In this new design, a thin CW PPHA layer is introduced to provide strong cross-linking and attachment to the metal or semiconductor surfaces and to provide a good foundation for better bonding a pulsed PPHA layer with high retention of functional groups. The combined mode provides the pulsed mode advantage of a 3-fold higher density of primary amines, while retaining much of the markedly higher stability in aqueous solutions of the continuous mode.

Experiment and theoretical prediction of martensitic transformation crystallography in a Ni–Mn–Ga ferromagnetic shape memory alloy

A detailed study of martensitic transformation crystallography and microstructural characteristics in the Ni53Mn25Ga22 ferromagnetic shape memory alloy (FSMA) was performed by both experimental observation and theoretical calculation. It is revealed that there are two microscopically twin-related martensitic variants with a misorientation of ∼82° around the 〈1 1 0〉_M axis in each initial austenite grain. The twin interface plane was determined to be {0.399 0.383 0.833}_M (1.79° away from {1 1 2}_M). The ratio of the amounts of the two variants inherited from one single austenite grain is about 1.70. The prevalent orientation relationship between austenite and martensite was found to be Kurdjumov–Sachs (K–S) relationship with (1 1 1)_A//(1 0 1)_M, [110]A//[111]_M. A successful explanation of the crystallographic features during martensitic transformation will shed light on the development of FSMAs with optimal performance.

Textures and compressive properties of ferromagnetic shape-memory alloy Ni48Mn25Ga22Co5 prepared by isothermal forging process

A ferromagnetic shape-memory alloy Ni₄₈Mn₂₅Ga₂₂Co₅ was prepared by the induction melting and isothermal forging process. Dynamic recrystallization occurs during the isothermal forging. The deformation texture was studied by the neutron diffraction technique. The main texture components consist of (110)[112] and (001)[100], which suggested that in-plane plastic flow anisotropy should be expected in the as-forged condition. The uniaxial compression fracture strain in the forged alloy reaches over 9.5%. The final room-temperature fracture of the polycrystalline Ni₄₈Mn₂₅Ga₂₂Co₅ is controlled mainly by intergranular mode.

Ferromagnetic properties of Y-doped ALN nanorods

Room-temperature ferromagnetism has been observed in Y-doped AlN (AlN:Y) nanorods. Our first-principle calculations have demonstrated that the ferromagnetism in AlN:Y is from Al vacancies and that the introduction of nonmagnetic rare-earth element Y into AlN can significantly reduce the formation energy of Al vacancy which leads to high Al vacancies responsible for the observed ferromagnetism in AlN:Y nanorods. These findings illustrate an efficient way to reduce the formation energy of cation vacancy by doping nonmagnetic elements, such as Y, leading to ferromagnetism in semiconductors.

Crystallographic features during martensitic transformation in Ni-Mn-Ga ferromagnetic shape memory alloys

The martensitic transformation crystallography in two Ni ₅₃Mn₂₅Ga₂₂ (at. %) ferromagnetic shape memory alloys (FSMAs) was investigated by means of misorientation calculation and pole figure analysis based on the orientation of the martensitic lamellae obtained from electron backscattered diffraction (EBSD) measurements. In the alloy that was first annealed at 1073K for 4h, and then cooled to 473K at ~4K/min and held for 30min, followed by cooling to room temperature at ~10K/min, there are only two kinds of differently orientated martensitic lamellae with a misorientation angle of ~82° distributed alternatively in each initial austenite grain. There is a compound twinning orientation relationship between the two lamellae. The prevalent orientation relationship between austenite and martensite is Kurdjumov-Sachs (K-S) relationship with (111)_A//(10I)_M, [1-10]_a//[11-1]_m. In the alloy that was annealed at 1173K for 4h followed by furnace cooling, nanoscale twins inside the martensitic lamellae were observed and the orientation relationships both between the nanotwins within one lamella and between the nanotwins in two neighboring lamellae were determined. The results presented in this paper will enrich the crystallographic data of the FSMAs and offer useful information for the development of novel FSMAs with optimal performances.

One-dimensional polyelectrolyte/polymeric semiconductor core/shell structure : sulfonated poly(arylene ether ketone)/polyaniline nanofibers for organic field-effect transistors

A polyelectrolyte/polymeric semiconductor core/shell structure is developed for organic field-effect transistors (OFETs) based on sulfonated poly(arylene ether ketone)/polyaniline core/shell nanofibers via electrospinning and solution-phase selective polymerization. The polyelectrolyte does not work as a gate dielectric, but can provide an internal modulation from the nanointerface of the 1D core/shell nanostructure. The transistor devices display very high mobilities.