Ferromagnetic properties of Y-doped ALN nanorods


Autoria(s): Lei, Weiwei; Liu, Dan; Chen, Xin; Zhu, Pinwen; Cui, Qiliang; Zou, Guangtian
Data(s)

01/01/2010

Resumo

Room-temperature ferromagnetism has been observed in Y-doped AlN (AlN:Y) nanorods. Our first-principle calculations have demonstrated that the ferromagnetism in AlN:Y is from Al vacancies and that the introduction of nonmagnetic rare-earth element Y into AlN can significantly reduce the formation energy of Al vacancy which leads to high Al vacancies responsible for the observed ferromagnetism in AlN:Y nanorods. These findings illustrate an efficient way to reduce the formation energy of cation vacancy by doping nonmagnetic elements, such as Y, leading to ferromagnetism in semiconductors.<br />

Identificador

http://hdl.handle.net/10536/DRO/DU:30047836

Idioma(s)

eng

Publicador

American Chemical Society

Relação

http://dro.deakin.edu.au/eserv/DU:30047836/liu-ferromagneticpropertiesof-2010.pdf

http://dx.doi.org/10.1021/jp102375e

Direitos

2010, American Chemical Society

Tipo

Journal Article