Low actuation-voltage shift in MEMS switch using ramp dual-pulse

This paper proposes a ramp dual-pulse actuation-voltage waveform that reduces actuation-voltage shift in capacitive microelectromechanical system (MEMS) switches. The proposed waveform as well as two reported waveforms (dual pulse, and novel dual-pulse) are analyzed using equivalent-circuit and equation models. Based on the analysis outcome, the paper provides a clear understanding of trapped charge density in the dielectric. The results show that the proposed actuation-voltage waveform successfully reduces trapped charge and increases lifetime due to lowering of actuation-voltage shift. Using the proposed actuation-voltage waveform, the membrane reaches a steady state on the electrode faster.

Nanofretting behaviors of NiTi shape memory alloy

Nanofretting refers to cyclic movements of contact interfaces with the relative displacement amplitude at the nanometer scale, where the contact area and normal load are usually much smaller than those in fretting. Nanofretting widely exists in microelctromechanical systems (MEMS) and may become a key tribological concern besides microwear and adhesion. With a triboindenter, the nanofretting behaviors of a nickel titanium (NiTi) shape memory alloy are studied under various normal loads (1–10 mN) and tangential displacement amplitudes (2–500 nm) by using a spherical diamond tip. Similar to fretting, the nanofretting of NiTi/diamond pair can also be divided into different regimes upon various shapes of tangential force–displacement curves. The dependence of nanofretting regime on the normal load and the displacement amplitude can be summarized in a running condition nanofretting map. However, due to the surface and size effects, nanofretting operates at some different conditions, such as improved mechanical properties of materials at the nanometer scale, small apparent contact area and single-asperity contact behavior. Consequently, different from fretting, nanofretting was found to exhibit several unique behaviors: (i) the maximum tangential force in one cycle is almost unchanged during a nanofretting test, which is different from a fretting test where the maximum tangential force increases rapidly in the first dozens of cycles; (ii) the tangential stiffness in nanofretting is three orders magnitude smaller than that in fretting; (iii) the friction coefficient in nanofretting is much lower than that in fretting in slip regime; (iv) no obvious damage was observed after 50 cycles of nanofretting under a normal load of 10 mN.

A protocol for improving fabrication yield of thin SU-8 microcantilevers for use in an aptasensor

SU-8 negative photoresist has been extensively employed in the fabrication of microfluidics and microelectromechanical systems. This is due to its advantages including ease of fabrication using limited equipment, biocompatibility, excellent chemical resistance, and compatibility with silicon processing. In addition, its low Young’s modulus compared to silicon has made it an excellent choice for microcantilever structure development especially for sensing applications. This paper presents a fabrication protocol for the development of thin SU-8 microcantilevers. Factors such as baking temperatures and release methods that influence the fabrication yield of SU-8 microcantilevers are considered. The influence of the baking temperature on the deformation of the SU-8 structure is investigated using the finite element method and verified experimentally. Three release methods are studied including a dry release method using fluorocarbon film, and two wet release methods using OmniCoat sacrificial layer and polymethyl methacrylate (PMMA) sacrificial layer. The wet release method using PMMA sacrificial layer produced the highest yield. An aptasensor is formed using the SU-8 microcantilever, and its deflection measured for thrombin detection.

Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

Development of a low actuation voltage electrostatic RF MEMS switch

The research focused on the design, fabrication and measurement of a low actuation voltage micro electro mechanical high frequency switch. The fabricated micro switch offers outstanding radio frequency parameters for a very large frequency band, with actuation voltage and switching time less than 20 volts and 3 micro seconds, respectively.