Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.

Design and analysis of a low actuation voltage electrowetting-on-dielectric device

This paper presents an Electrowetting-on-Dielectric (EWOD) device with optimized insulating layers operated by low actuation voltage. The device consists of an electrode array on a silicon substrate, covered by a dielectric layer and a hydrophobic layer. To characterize the performance of the device, simulations are performed for the dielectric layer of Sio₂ and the hydrophobic layer of Sio₂, Su-8 and Parylene C at different voltages. The volume finite difference approach of the Coventorware software was used to carry out the simulations. Two different molar of di-ionized water droplet were considered in the simulations. It was observed that the device having the Sio₂ dielectric layer and the Parylene C hydrophobic layer moved the 1M KCL (potassium chloride) droplet at the actuation voltage of 25V.

Voltage regulation in renewable energy integration into the distribution network

Large-scale renewable energy (RE) integration into the distribution network (DN) causes uncertainties due to its intermittent nature and is a challenging task today. In general RE sources are mostly connected near the end user level, i.e., in the low voltage distribution network. RE integration introduces bi-directional power flows across distribution transformer (DT) and hence DN experiences with several potential problems that includes voltage fluctuations, reactive power compensation and poor power factor in the DN. This study identifies the potential effects causes due to large-scale integration of RE into the Berserker Street Feeder, Frenchville Substation under Rockhampton DN. From the model analyses, it has clearly evident that voltage of the Berserker Street Feeder fluctuates with the increased integration of RE and causes uncertainties in the feeder as well as the DN.

Highly linear low voltage low power CMOS LNA

A highly linear, low voltage, low power, low noise amplifier (LNA) using a novel nonlinearity cancellation technique is presented in this paper. Parallel Inductor (PI) matching is used to increase LNA gain by 3dB at the desired frequency. The linear LNA was designed and simulated in a TSMC 0.18μm CMOS process at 5GHz frequency. By employing the proposed technique, the IIP3 is improved by 12dB in contrast to the conventional folded cascode LNA, reaching −1dBm without having any significant effect on the other LNA parameters such as gain, NF and also power consumption. The proposed LNA also delivers a voltage gain (S21) of 12.25dB with a noise figure of 3.5dB, while consuming only 1.28mW of DC power with a low supply voltage of 0.6V.

RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band

Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.