5 resultados para Germination -- Experiments

em Universitat de Girona, Spain


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Germination experiments were performed with seeds of two species of genus Allium section Allium, a rare and endangered species A. pyrenaicum and a common A. sphaerocephalon. Different pre-treatments and a photoperiod of 24 h darkness were applied in order to simulate different germination conditions. Both species showed a high percentage of viable seeds a part of which were dormant. An elevate percentage of dormant seeds could be caused by a later collection time. Low altitude populations had more mortality than the others, possibly caused by the hard summer conditions during flowering and fruiting time. Comparisons between dates of species coexistence localities only show inter-population variability and it could be caused by the detected dormancy. Darkness accelerates germination, possibly for elongation radicle stimulation. Heat-shock pre-treatments decreased germination time in seeds from localities where fire is a probable event. The rarity of A. Pyrenaicum not seems to be caused by restricted germination requirements but is attributable to distinct habitat preferences, related to his altitudinal range of distribution

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This paper presents the distributed environment for virtual and/or real experiments for underwater robots (DEVRE). This environment is composed of a set of processes running on a local area network composed of three sites: 1) the onboard AUV computer; 2) a surface computer used as human-machine interface (HMI); and 3) a computer used for simulating the vehicle dynamics and representing the virtual world. The HMI can be transparently linked to the real sensors and actuators dealing with a real mission. It can also be linked with virtual sensors and virtual actuators, dealing with a virtual mission. The aim of DEVRE is to assist engineers during the software development and testing in the lab prior to real experiments

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The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon