Thermostatistical description of small systems in nonequilibrium conditions: Energy conversion and harvesting

Hysteresis cycles are very important features of energy conversion and harvesting devices, such as batteries. The efficiency of these may be strongly affected by the physical size of the system. Here, we show that in systems which are small enough, the existence of physical boundaries which produce nonhomogeneities of the interaction potential gives rise to inflections and barriers in the associated free energy. This in turn brings on irreversible processes which can be triggered under suitable external conditions imposed by a heat bath. As an example, by controlling the temperature, the state of a small system may be impelled to oscillate between two different structural configurations or aggregation states avoiding equilibrium coexistence and therefore dissipating energy. This cyclical behavior associated with a hysteresis cycle may be prototypical of energy conversion, storage, or generating nanodevices, as exemplified by Li-ion insertion batteries.

Characterization of nano-oxide layers fabricated by ion beam oxidation

In this paper, a remote O2 ion source is used for the formation of nano-oxide layers. The oxidation efficiency was measured in CoFe-oxide films, and a decrease of the oxide layer with the pan angle and the oxidation pressure is observed. For the same oxidation pressure, the oxidation efficiency depends on the O2 content in the Ar-O2 plasma. These results were applied in optimizing the fabrication of Al2O3 barrier for tunnel junctions. This method was also used to fabricate junctions with Fe-oxide layers inserted at the Al2O3-CoFe interface. TEM and magnetization data indicate that after anneal at 385°C, a homogeneous ferromagnetic Fe-oxide layer (Fe3O4?) is formed.

Approval voting ion dichotomous preferences

The aim of this paper is to find normative foundations of Approval Voting. In order to show that Approval Voting is the only social choice function that satisfies anonymity, neutrality, strategy-proofness and strict monotonicity we rely on an intermediate result which relates strategy-proofness of a social choice function to the properties of Independence of Irrelevant Alternatives and monotonicity of the corresponding social welfare function. Afterwards we characterize Approval Voting by means of strict symmetry, neutrality and strict monotonicity and relate this result to May's Theorem. Finally, we show that it is possible to substitute the property of strict monotonicity by the one efficiency of in the second characterization.

Basis set superposition error-counterpoise corrected potential energy surfaces : application to hydrogen peroxide ... X (X=F-, Cl-, Br-, Li+, Na+) complexes

Møller-Plesset (MP2) and Becke-3-Lee-Yang-Parr (B3LYP) calculations have been used to compare the geometrical parameters, hydrogen-bonding properties, vibrational frequencies and relative energies for several X- and X+ hydrogen peroxide complexes. The geometries and interaction energies were corrected for the basis set superposition error (BSSE) in all the complexes (1-5), using the full counterpoise method, yielding small BSSE values for the 6-311 + G(3df,2p) basis set used. The interaction energies calculated ranged from medium to strong hydrogen-bonding systems (1-3) and strong electrostatic interactions (4 and 5). The molecular interactions have been characterized using the atoms in molecules theory (AIM), and by the analysis of the vibrational frequencies. The minima on the BSSE-counterpoise corrected potential-energy surface (PES) have been determined as described by S. Simón, M. Duran, and J. J. Dannenberg, and the results were compared with the uncorrected PES

Metallic and nonmetallic shine in luster: An elastic ion backscattering study

Luster is a metal glass nanocomposite layer first produced in the Middle East in early Islamic times ( 9th AD) made of metal copper or silver nanoparticles embedded in a silica-based glassy matrix. These nanoparticles are produced by ion exchange between Cu+ and Ag+ and alkaline ions from the glassy matrix and further growth in a reducing atmosphere. The most striking property of luster is its capability of reflecting light like a continuous metal layer and it was unexpectedly found to be linked to one single production parameter: the presence of lead in the glassy matrix composition. The purpose of this article is to describe the characteristics and differences of the nanoparticle layers developed on lead rich and lead free glasses. Copper luster layers obtained using the ancient recipes and methods are analyzed by means of elastic ion backscattering spectroscopy associated with other analytical techniques. The depth profile of the different elements is determined, showing that the luster layer formed in lead rich glasses is 5–6 times thinner and 3–4 times Cu richer. Therefore, the metal nanoparticles are more densely packed in the layer and this fact is related to its higher reflectivity. It is shown that lead influences the structure of the metal nanoparticle layer through the change of the precipitation kinetics

La Crisi i el petit comerç alimentari : els queviures vs. els supermercats

Els queviures són petits comerços d’alimentació on el tractament personal amb els clients es la clau de l’èxit ja que això provoca una conscienciació per part d’aquests i així es mantenen fidels a aquest establiment. En canvi, el supermercats tracten de explotar al màxim la seva reducció dels costos sense tenir tant en compte el tracte amb el client i donant-li més importància al preu de producte. Com podem observar, són dos tipus de comerços molt diferenciats tot i que al cap i a la fi, són competidors directes.La idea d’aquest treball es veure com afecta la crisi actual en aquests petits comerços i comparar-los amb el grans supermercats per arribar a una sèrie de conclusions.Hem escollit aquest tema ja que ens ha semblat interessant tractar de demostrar com el queviures tradicionals segueixen sent un negoci de profit, tot i la forta expansió que han patit les grans superfícies comercials. Un exemple d’aquest fort creixement podrien ser les dades que ens ha facilitat l’Ajuntament de Barcelona on es reflexa que el consum d’aliments es solen donar en primer lloc al supermercat (47,3%), seguit pel mercat municipal (29,3%) i en tercer lloc en la botiga de barri (16,2%).Un dels grans problemes amb que es troben els queviures és el canvi en el ritme de vida de la societat actual, sempre amb presses i estressada, que busca més, la comoditat i l’estalvi, tant de temps com de diners, a l’hora d’anar a comprar. Peraquest motiu, hem volgut investigar sobre quin es el factor que facilita la supervivència dels queviures.Degut a que el tema dels comerços estrangers va ser un tema que va provocar molta controvèrsia a la presentació del nostre treball, hem cregut convenient estudiar-lo una mica més a fons, únicament a Poble Sec. Per fer-ho hem estudiat el punt de vista que tenen els comerços estrangers sobre els comerços nacionals i també la situació actual del nombre de queviures regentats per uns i altres a través de informació extreta de la associació de comerciants de Poble Sec.Per crear el nostre treball hem realitzar diferents enquestes i entrevistes, tant a consumidors com a propietaris, per poder extreure informació amb la qual poder treballar. En total hem realitzar 100 enquestes a clients, una enquesta a cadapropietari i dues entrevistes: una a un propietari estranger i una altra a Pedro de Diego ( fundador de la associació de comerciants del Poble Sec i primer tresorer del barri)Cal destacar que ens hem trobat amb moltes dificultats per trobar o aconseguir dades econòmiques i financeres sobre aquests establiments i per això hem realitzat una aproximació a la proporció de beneficis sobre ingressos per veure quina proporció dels ingressos es poden considerar beneficis.També hem recopilat diverses notícies de diaris que tracten sobre temes relacionats amb la crisi del petit comerç i sobre l’augment en el nombre de nous queviures regentats per gent estrangera, i a partir d’aquestes hem realitzat una breu crítica sobre la situació actual.

A qui li dic? : la detecció de l’abús sexual infantil i el traspàs d’informació entre professionals

Aquest treball s'estructura en una primera part de fonamentació teòrica. El procediment que s'ha seguit ha estat la recerca bibliogràfica. Es basa en els aspectes tècnics a tenir en compte per la detecció de l' Abusos Sexuals Infantils (ASI), la ubicació dels Serveis Bàsics d'Atenció Social (SBAS) dins el sistema català de serveis socials, el marc jurídic dels drets i de la protecció a la infància i l'adolescència així com de qüestions relatives al tractament de dades, de la confidencialitat de les informacions de què disposem els/les professionals, l'obligació de secret, complementat amb la deontologia professional, que ens pot orientar a l'hora de prendre les decisions més adequades a la nostra praxi. La segona part del treball és empírica. El procediment ha estat portar a terme un grup de reflexió ètica amb professionals del Consorci de Benestar Social del Pla de l'Estany-Banyoles. Partint de casos pràctics de sospita d'ASI, les persones participants han concretat els principals problemes (alguns dels quals relacionats amb l'ètica aplicada) davant els quals s'han trobat a la fase de detecció/intervenció. Les aportacions extretes de les diferents sessions en les quals es van treballar part dels objectius d'aquesta recerca ens permeten concretar la realitat i una primera deliberació sobre quina podria ser la bona pràctica general. La tercera part utilitza la fonamentació teòrica i els material del treball de camp per presentar la reflexió final que pretén donar resposta als objectius plantejats en aquesta recerca

Vacancy and interstitial depth profiles in ion-implanted silicon

An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy¿oxygen center, and the interstitial profile, represented by the interstitial carbon¿substitutional carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail has been extensively studied and taken into account. Thus, the two profiles can be recorded with a high relative depth resolution. Using low doses, point defects have been introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature. The effect of the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile is displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increases as the width of the initial point defect distribution increases. This behavior is explained by a simple model where the preferential forward momentum of recoiling silicon atoms and the highly efficient direct recombination of primary point defects are taken into account.

White luminescence from Si+ and C+ ion-implanted SiO2 films

The microstructural and optical analysis of SiO2 layers emitting white luminescence is reported. These structures have been synthesized by sequential Si+ and C+ ion implantation and high-temperature annealing. Their white emission results from the presence of up to three bands in the photoluminescence (PL) spectra, covering the whole visible spectral range. The microstructural characterization reveals the presence of a complex multilayer structure: Si nanocrystals are only observed outside the main C-implanted peak region, with a lower density closer to the surface, being also smaller in size. This lack of uniformity in their density has been related to the inhibiting role of C in their growth dynamics. These nanocrystals are responsible for the band appearing in the red region of the PL spectrum. The analysis of the thermal evolution of the red PL band and its behavior after hydrogenation shows that carbon implantation also prevents the formation of well passivated Si/SiO2 interfaces. On the other hand, the PL bands appearing at higher energies show the existence of two different characteristics as a function of the implanted dose. For excess atomic concentrations below or equal to 10%, the spectra show a PL band in the blue region. At higher doses, two bands dominate the green¿blue spectral region. The evolution of these bands with the implanted dose and annealing time suggests that they are related to the formation of carbon-rich precipitates in the implanted region. Moreover, PL versus depth measurements provide a direct correlation of the green band with the carbon-implanted profile. These PL bands have been assigned to two distinct amorphous phases, with a composition close to elemental graphitic carbon or stoichiometric SiC.

Modifications in the Si valence band after ion-beam-induced oxidation

The changes undergone by the Si surface after oxygen bombardment have special interest for acquiring a good understanding of the Si+-ion emission during secondary ion mass spectrometry (SIMS) analysis. For this reason a detailed investigation on the stoichiometry of the builtup surface oxides has been carried out using in situ x-ray photoemission spectroscopy (XPS). The XPS analysis of the Si 2p core level indicates a strong presence of suboxide chemical states when bombarding at angles of incidence larger than 30°. In this work a special emphasis on the analysis and interpretation of the valence band region was made. Since the surface stoichiometry or degree of oxidation varies with the angle of incidence, the respective valence band structures also differ. A comparison with experimentally measured and theoretically derived Si valence band and SiO2 valence band suggests that the new valence bands are formed by a combination of these two. This arises from the fact that Si¿Si bonds are present on the Si¿suboxide molecules, and therefore the corresponding 3p-3p Si-like subband, which extends towards the Si Fermi level, forms the top of the respective new valence bands. Small variations in intensity and energy position for this subband have drastic implications on the intensity of the Si+-ion emission during sputtering in SIMS measurements. A model combining chemically enhanced emission and resonant tunneling effects is suggested for the variations observed in ion emission during O+2 bombardment for Si targets.

Configurational statistical model for the damaged structure of silicon oxide after ion implantation

A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.

Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

A microstructural analysis of silicon-on-insulator samples obtained by high dose oxygen ion implantation was performed by Raman scattering. The samples analyzed were obtained under different conditions thus leading to different concentrations of defects in the top Si layer. The samples were implanted with the surface covered with SiO2 capping layers of different thicknesses. The spectra measured from the as-implanted samples were fitted to a correlation length model taking into account the possible presence of stress effects in the spectra. This allowed quantification of both disorder effects, which are determined by structural defects, and residual stress in the top Si layer before annealing. These data were correlated to the density of dislocations remaining in the layer after annealing. The analysis performed corroborates the existence of two mechanisms that generate defects in the top Si layer that are related to surface conditions during implantation and the proximity of the top Si/buried oxide layer interface to the surface before annealing.