Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Autoria(s): Pellegrino, Paolo; Leveque, P.; Hallen, A.; Lalita, J.; Jagadish, C.(Chennupati); Svensson, Bengt G.
Contribuinte(s)

Universitat de Barcelona
Data(s)

04/05/2010
Identificador

http://hdl.handle.net/2445/10599
Idioma(s)

eng
Publicador

The American Physical Society
Direitos

(c) The American Physical Society, 2001

info:eu-repo/semantics/openAccess
Palavras-Chave #Microelectrònica #Dispositius magnètics #Microelectronics #Magnetic devices
Tipo

info:eu-repo/semantics/article
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