26 resultados para Eichmann, Adolf

em Consorci de Serveis Universitaris de Catalunya (CSUC), Spain


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Investigació acadèmica que proposa un estudi hermenèutic de les utopies polítiques de Tomàs Moro, Maximilien Robespierre i Adolf Hitler, i que hi aprofundeix amb un anàlisi teòric dels mitjans de comunicació contemporanis als autors per tal d’entendre la relació entre utopia, poder i comunicació en diversos contextos històrics i entorns socials.

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Estudi transversal de pacients VIH en els que es va determinar colecalciferol (25-OH- Vit.D3) i PTH, excloint a pacients amb insuficiència renal, hepàtica i nivells plasmàtics anormals de calci i/o fósfor Es van incloure 566 pacients, amb una exposició a tenofovir del 56,4%. La prevalència de vitamina D insuficient va der del 71,2% i la deficiència del 39,6% . La PTH es va determinar en 228 casos, presentant nivells elevats 86 d’ells (37,7%). Els factors de risc ajustats de deficiència de vitamina D van ser, ésser de raza no blanca i la morbilitat psiquiàtrica, essent la lipoatròfia, un factor protector. Els factors de risc independents de nivells elevats de PTH van ser: Vitamina D&12 ng/ml: OR: 2,14 (IC95%: 1,19-3,82, p: 0,01) i l’ exposició a tenofovir: OR: 3,55 (IC95%: 1,62-7,7, p: 0,002).

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Mediante difracción de rayos X se valora cuantitativamente el fluoruro cálcico remanente en la reacción al estado sólido con hidroxiapatito, para formar fluorapatito, a distintos tiempos y temperaturas de tratamiento térmico. Se observa que tanto el aumento de temperatura como el tiempo de calefacción hacen descender el porcentaje de fluoruro cálcico libre, que por otra parte siempre está presente, por cuanto la reacción no es total.

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Thin films of hydrogenated amorphous silicon (a‐Si:H), deposited by square wave modulated (SQWM) rf silane discharges, have been studied through spectroscopic and real time phase modulated ellipsometry. The SQMW films obtained at low mean rf power density (19 mW/cm2) have shown smaller surface roughness than those obtained in standard continuous wave (cw) rf discharges. At higher rf powers (≥56 mW/cm2), different behaviors depending on the modulating frequency have been observed. On the one hand, at low modulating frequencies (<40 Hz), the SQWM films have shown a significant increase of porosity and surface roughness as compared to cw samples. On the other, at higher modulating frequencies, the material density and roughness have been found to be similar in SQWM and cw films. Furthermore, the deposition rate of the films show more pronounced increases with the modulating frequency as the rf power is increased. Experimental results are discussed in terms of plasma negative charged species which can be relatively abundant in high rf power discharges and cause significant effects on the deposited layers through polymers, clusters, and powder formation.

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We present a study about the influence of substrate temperature on deposition rate of hydrogenated amorphous silicon thin films prepared by rf glow discharge decomposition of pure silane gas in a capacitively coupled plasma reactor. Two different behaviors are observed depending on deposition pressure conditions. At high pressure (30 Pa) the influence of substrate temperature on deposition rate is mainly through a modification of gas density, in such a way that the substrate temperature of deposition rate is similar to pressure dependence at constant temperature. On the contrary, at low pressure (3 Pa), a gas density effect cannot account for the observed increase of deposition rate as substrate temperature rises above 450 K with an activation energy of 1.1 kcal/mole. In accordance with laser‐induced fluorescence measurements reported in the literature, this rise has been ascribed to an increase of secondary electron emission from the growing film surface as a result of molecular hydrogen desorption.

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We present a numerical method for spectroscopic ellipsometry of thick transparent films. When an analytical expression for the dispersion of the refractive index (which contains several unknown coefficients) is assumed, the procedure is based on fitting the coefficients at a fixed thickness. Then the thickness is varied within a range (according to its approximate value). The final result given by our method is as follows: The sample thickness is considered to be the one that gives the best fitting. The refractive index is defined by the coefficients obtained for this thickness.

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We present an ellipsometric technique and ellipsometric analysis of repetitive phenomena, based on the experimental arrangement of conventional phase modulated ellipsometers (PME) c onceived to study fast surface phenomena in repetitive processes such as periodic and triggered experiments. Phase modulated ellipsometry is a highly sensitive surface characterization technique that is widely used in the real-time study of several processes such as thin film deposition and etching. However, fast transient phenomena cannot be analyzed with this technique because precision requirements limit the data acquisition rate to about 25 Hz. The presented new ellipsometric method allows the study of fast transient phenomena in repetitive processes with a time resolution that is mainly limited by the data acquisition system. As an example, we apply this new method to the study of surface changes during plasma enhanced chemical vapor deposition of amorphous silicon in a modulated radio frequency discharge of SiH4. This study has revealed the evolution of the optical parameters of the film on the millisecond scale during the plasma on and off periods. The presented ellipsometric method extends the capabilities of PME arrangements and permits the analysis of fast surface phenomena that conventional PME cannot achieve.

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The influence of radio frequency (rf) power and pressure on deposition rate and structural properties of hydrogenated amorphous silicon (a-Si:H) thin films, prepared by rf glow discharge decomposition of silane, have been studied by phase modulated ellipsometry and Fourier transform infrared spectroscopy. It has been found two pressure regions separated by a threshold value around 20 Pa where the deposition rate increases suddenly. This behavior is more marked as rf power rises and reflects the transition between two rf discharges regimes. The best quality films have been obtained at low pressure and at low rf power but with deposition rates below 0.2 nm/s. In the high pressure region, the enhancement of deposition rate as rf power increases first gives rise to a reduction of film density and an increase of content of hydrogen bonded in polyhydride form because of plasma polymerization reactions. Further rise of rf power leads to a decrease of polyhydride bonding and the material density remains unchanged, thus allowing the growth of a-Si:H films at deposition rates above 1 nm/s without any important detriment of material quality. This overcoming of deposition rate limitation has been ascribed to the beneficial effects of ion bombardment on the a-Si:H growing surface by enhancing the surface mobility of adsorbed reactive species and by eliminating hydrogen bonded in polyhydride configurations.

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Dentro de la serie de Urgoiti Editores sobre los grandes nombres de la ciencia histórica en España, se publica la tercera obra dedicada a los arqueólogos y prehistoriadores de la primera mitad del siglo XX. Tras los estudios de Jordi Cortadella sobre Pere Bosch Gimpera (1981-1974) y Fernando Wulff sobre Adolf Schulten (1870-1960), y a la espera del trabajo de Gloria Mora sobre Hugo Obermaier (1877-1946), ve la luz el estudio que Margarita Díaz Andreu ha dedicado a una de las figuras más nombradas, pero a la par más desconocidas, de la arqueología española: José Ramón Mélida y Alinari (1856-1933).

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L'objectiu principal és oferir uns recursos educatius multimèdia (en format HTML i JAVA) utilitzables en línea (Internet) o en suport autònom (CD-ROM) per a l'autoformació i l'autoevaluació ...

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The two independent components of the gyration tensor of quartz, g11 and g33, have been spectroscopically measured using a transmission two-modulator generalized ellipsometer. The method is used to determine the optical activity in crystals in directions other than the optic axis, where the linear birefringence is much larger than the optical activity.