Producció de material docent per a ciència de materials mitjançant microscòpia electrònica de rastreig i làser confocal

Aquest projecte s'ha realitzat al Servei de Microscòpia de la Universitat Autònoma de Barcelona, i ha tingut una durada de dos anys (2006-2008). La finalitat d’aquest projecte ha estat l’elaboració de material didàctic basat en la captació d’imatges i l’edició de recursos pedagògics de suport digital aplicats a la ciència de materials. Es pretén millorar així la qualitat docent de les pràctiques de diverses assignatures dels ensenyaments de Física i d’Enginyeria de Materials utilitzant tècniques d’anàlisi actuals com són la Microscòpia Electrònica de Rastreig (MER) i la Microscòpia Optica (MO). Amb aquest projecte es vol fomentar també el treball interdisciplinari en equip entre professionals (docents i tècnics superiors de recerca) i acostar la teoria de les assignatures a la realització pràctica, facilitant el suport digital necessari per aconseguir un màxim aprofitament a les aules. Les imatges de MER i MO ajudaran als alumnes a familiaritzar-se amb el món de la recerca i la indústria.

La Tècnica FISH i el microscopi confocal aplicats a la determinació de fraccions de biomassa en un reactor aerobi nitrificant

Vegeu el resum del projecte de final de carrera en el document adjunt ResumPFCMarsol

Elaboració de nous recursos docents en el camp de la biologia vegetal, mitjançant l'ús de noves tecnologies de microscòpia com làser confocal i multifotó

Aquest projecte s'ha realitzat al Servei de Microscòpia de la Universitat Autònoma de Barcelona, i ha tingut una durada de dos anys (2007-2009). Els objectius concrets d'aquest projecte assolits per a les diferents assignatures ha estat l'anàlisi de característiques citològiques, característiques morfològiques i anatòmiques de les estructures vegetatives dels diferents nivells d’organització, característiques morfològiques i anatòmiques de les estructures reproductores. El material docent obtingut en aquest projecte està sent utilitzat en les assignatures següents: Botànica Farmacèutica, Biodiversitat vegetal marina, Recursos vegetals aquàtics: les algues, Plantes d'ús alimentari, Conserv. i gestió de poblacions i comunitats marines, Usos i cultius de recursos algals marins, B. i diversitat de criptògames, Biologia II, Tècniques Exp. de biologia II, Botànica, Biologia animal i vegetal. Per a la realització de l’estudi, s'ha obtingut una col·lecció d’imatges al MLC, MER i MET per aclarir els criteris sistemàtics. Durant el primer any s’han adquirit totes les imatges necessàries, per tal de poder elaborar el material didàctic en suport digital. Durant el segon any s’ha implementat aquest material a les respectives classes pràctiques i s’ha avaluat la seva importància en la millora de la formació dels alumnes i del suport al professor. L’aplicació del material elaborat a la docència pràctica durant el tot segon any ha permès fer un primer estudi per valorar la seva eficàcia i fer-hi les correccions oportunes. Durant tot el projecte, el treball conjunt de professors i tècnics ha estat bàsic per a l’obtenció de material didàctic adequat a la realitat dels estudis actuals i a la docència pràctica.

Estudio comparativo entre microscopía confocal y microscopía especular en la valoración del endotelio en córneas con distrofia de Fuchs

La distròfia endotelial de Fuchs es caracteritza per la formació de guttas endotelials i en estadis avançats pot induir edema corneal i pèrdua d’agudesa visual. A diferència del microscopi especular, el microscopi confocal té un disseny que permet evitar la llum aberrant causada per l’edema corneal o opacitats estromals. Comparant ambdues probes en la valoració de l’endoteli corneal en pacients amb distròfia de Fuchs, s’observa millor qualitat d’imatge per microscòpia confocal tot i que no es podia valorar la fiabilitat de l’esmentada proba en la determinació de la densitat cel•lular endotelial en les còrnies afectades.

Thrombin-induced contraction in alveolar epithelial cells probed by traction microscopy

Contractile tension of alveolar epithelial cells plays a major role in the force balance that regulates the structural integrity of the alveolar barrier. The aim of this work was to study thrombin-induced contractile forces of alveolar epithelial cells. A549 alveolar epithelial cells were challenged with thrombin, and time course of contractile forces was measured by traction microscopy. The cells exhibited basal contraction with total force magnitude 55.0 ± 12.0 nN (mean ± SE, n = 12). Traction forces were exerted predominantly at the cell periphery and pointed to the cell center. Thrombin (1 U/ml) induced a fast and sustained 2.5-fold increase in traction forces, which maintained peripheral and centripetal distribution. Actin fluorescent staining revealed F-actin polymerization and enhancement of peripheral actin rim. Disruption of actin cytoskeleton with cytochalasin D (5 µM, 30 min) and inhibition of myosin light chain kinase with ML-7 (10 µM, 30 min) and Rho kinase with Y-27632 (10 µM, 30 min) markedly depressed basal contractile tone and abolished thrombin-induced cell contraction. Therefore, the contractile response of alveolar epithelial cells to the inflammatory agonist thrombin was mediated by actin cytoskeleton remodeling and actomyosin activation through myosin light chain kinase and Rho kinase signaling pathways. Thrombin-induced contractile tension might further impair alveolar epithelial barrier integrity in the injured lung.

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization.

The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

We have studied the effects of rapid thermal annealing at 1300¿°C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology scattered over the surface. The annealed GaN/Si layers were characterized by a range of experimental techniques: scanning electron microscopy, optical confocal imaging, energy dispersive x-ray microanalysis, Raman scattering, and cathodoluminescence. A substantial Si migration to the GaN epilayer was observed in the crater regions, where decomposition of GaN and formation of Si3N4 crystallites as well as metallic Ga droplets and Si nanocrystals have occurred. The average diameter of the Si nanocrystals was estimated from Raman scattering to be around 3¿nm. Such annealing effects, which are not observed in GaN grown on sapphire, are a significant issue for applications of GaN grown on Si(111) substrates when subsequent high-temperature processing is required.

Nanoscale capacitance microscopy of thin dielectric films

We present an analytical model to interpret nanoscale capacitance microscopy measurements on thin dielectric films. The model displays a logarithmic dependence on the tip-sample distance and on the film thickness-dielectric constant ratio and shows an excellent agreement with finite-element numerical simulations and experimental results on a broad range of values. Based on these results, we discuss the capabilities of nanoscale capacitance microscopy for the quantitative extraction of the dielectric constant and the thickness of thin dielectric films at the nanoscale.

Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers

Optical absorption spectra and transmission electron microscopy (TEM) observations on InGaAs/InP layers under compressive strain are reported. From the band¿gap energy dispersion, the magnitude of the strain inhomogeneities. Is quantified and its microscopic origin is analyzed in view of the layer microstructure. TEM observations reveal a dislocation network at the layer interface the density of which correlates with ¿¿. It is concluded that local variations of dislocation density are responsible for the inhomogeneous strain field together with another mechanism that dominates when the dislocation density is very low.

Micro-Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy

Stress in local isolation structures is studied by micro‐Raman spectroscopy. The results are correlated with predictions of an analytical model for the stress distribution and with cross‐sectional transmission electron microscopy observations. The measurements are performed on structures on which the Si3N4 oxidation mask is still present. The influence of the pitch of the periodic local isolation pattern, consisting of parallel lines, the thickness of the mask, and the length of the bird"s beak on the stress distribution are studied. It is found that compressive stress is present in the Si substrate under the center of the oxidation mask lines, with a magnitude dependent on the width of the lines. Large tensile stress is concentrated under the bird"s beak and is found to increase with decreasing length of the bird"s beak and with increasing thickness of the Si3N4 film.

Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy

In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.

Magnetic microstructures from magnetic force microscopy and Monte Carlo simulation in CoFe-Ag-Cu granular films

CoFe-Ag-Cu granular films, prepared by rf sputtering, displayed magnetic domain microstructures for ferromagnetic concentrations above about 32% at, and below the percolation threshold. All samples have a fcc structure with an (111) texture perpendicular to the film plane. Magnetic force microscopy (MFM) showed a variety of magnetic domain microstructures, extremely sensitive to the magnetic history of the sample, which arise from the balance of the ferromagnetic exchange, the dipolar interactions and perpendicular magnetocrystalline anisotropy, MFM images indicate that in virgin samples, magnetic bubble domains with an out-of-plane component of the magnetization are surrounded by a quasicontinuous background of opposite magnetization domains. The application of a magnetic field in different geometries drastically modifies the microstructure of the system in the remanent state: i) for an in-plane field, the MFM images show that most of the magnetic moments are aligned along the film plane, ii) for an out-of-plane field, the MFM signal increases about one order of magnitude, and out-of-plane striped domains with alternating up and down magnetization are stabilized. Numerical simulations show that a variety of metastable domain structures (similar to those observed experimentally) can be reached, depending on magnetic history, in systems with competing perpendicular anisotropy, exchange and dipolar interactions.