Tunable epitaxial growth of magnetoresistive La2/3Sr1/3MnO3 thin films

We report on the growth of epitaxial La2/3Sr1/3MnO3 thin films on buffered Si(001) substrates. We show that a suitable choice of the buffer heterostructure allows one to obtain epitaxial (00h), (0hh), and (hhh) manganite thin films. The magnetotransport properties are investigated and we have found that the low-field magnetoresistance is directly related to the width of the normal-to-plane rocking curves, irrespective of the film orientation. The magnetic anisotropy of these films has also been determined.

Magneto-optical Kerr effect in laser-patterned La2/3Sr1/3MnO3 epitaxial thin films

In this study, we have performed magneto-optical Kerr effect (MOKE) measurement on epitaxial La2/3Sr1/3MnO3 thin films containing artificial interfaces created by laser-patterning the SrTiO3 substrate. The observed increase of the resistivity and of the high-field magnetoresistance when measuring the films across the interface arrays are related to the reduction of the magnetization of the interfaces with respect to the rest of the film. As observed by the local MOKE probe, the structural disorder in the manganite film induced by the underlying patterned substrate leads to a large spin disorder responsible for a strong high-field susceptibility of the resistance.

Kerr measurements on single-domain SrRuO3 thin films

We report on the magneto-optical measurements of an epitaxial SrRuO3 film grown on SrTiO3 (0 0 1), which previously was determined to be single domain orientated by x-ray diffraction and Raman spectroscopy techniques. Our experiments reveal a large Kerr rotation, which reaches a maximum value of about 0.5° at low temperature. By measuring magnetic hysteresis loops at different temperatures, we determined the temperature dependence of the Kerr rotation in the polar configuration. Values of the anisotropic magnetoresistance ~ 20% have been measured. These values are remarkably higher than those of other metallic oxides such as manganites. This striking difference can be attributed to the strong spin-orbit interaction of the Ru 4d ion in the SrRuO3 compound.

Ni-Mn-Ga thin films produced by pulsed laser deposition

Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films

Designing and testing of a sensor based on a magnetoresistive manganese perovskite thick film

In this paper we report on the growth of thick films of magnetoresistive La2/3Sr1/3MnO3 by using spray and screen printing techniques on various substrates (Al2O3 and ZrO2). The growth conditions are explored in order to optimize the microstructure of the films. The films display a room-temperature magnetoresistance of 0.0012%/Oe in the 1 kOe field region. A magnetic sensor is described and tested.

Optimización de un nuevo método de preparación de óxidos mixtos tipo perovskita con vacantes de oxígeno.

Se han optimizado las condiciones para la deslitiación de compuestos de fórmula general La2/3-xLi3xTiO3 así como las de la posterior termólisis de compuestos de fórmula general La2/3-xTiO3-3x(OH)3x. En ambos procesos se mantiene la estructura perovskita cúbica Pm3m. Estudios preliminares de conductividad eléctrica indican que los compuestos La2/3-xTiO3-3x/2 obtenidos mediante química suave a partir de la perovskita de lantano y litio se comportan como semiconductores.

Incompressibility of neutron-rich matter

The saturation properties of neutron-rich matter are investigated in a relativistic mean-field formalism using two accurately calibrated models: NL3 and FSUGold. The saturation properties density, binding energy per nucleon, and incompressibility coefficient are calculated as a function of the neutron-proton asymmetry α≡(N-Z)/A to all orders in α. Good agreement (at the 10% level or better) is found between these numerical calculations and analytic expansions that are given in terms of a handful of bulk parameters determined at saturation density. Using insights developed from the analytic approach and a general expression for the incompressibility coefficient of infinite neutron-rich matter, i.e., K0(α)=K0+Kτα2+ , we construct a hybrid model with values for K0 and Kτ as suggested by recent experimental findings. Whereas the hybrid model provides a better description of the measured distribution of isoscalar monopole strength in the Sn isotopes relative to both NL3 and FSUGold, it significantly underestimates the distribution of strength in 208Pb. Thus, we conclude that the incompressibility coefficient of neutron-rich matter remains an important open problem.

Magnetic properties of an Fe/Cu granular multilayer

A Cu/Fe granular film, formed from a multilayer film and composed of particles of Fe imbedded in Cu, has had several of its important properties investigated. Measurements include ferromagentic resonance, magnetoresistance, Mössbauer effect, magnetic viscosity, and magnetization. The two‐phase behavior of these immiscible alloy systems, and the effect of multilayering on the shape of the magnetic precipitates, can explain some of these properties. An explanation of the ferromagnetic resonance line shape is proffered. An extraordinary macroscopic quantum tunneling effect is found to govern the magnetic relaxation at the lowest temperatures.