Low resistance spin-dependent tunnel junctions with ZrAlOx barriers


Autoria(s): Wang, Jianguo; Freitas, P. P.; Snoeck, E.; Batlle Gelabert, Xavier; Cuadra, J.
Contribuinte(s)

Universitat de Barcelona

Data(s)

02/03/2012

Identificador

http://hdl.handle.net/2445/22087

Idioma(s)

eng

Publicador

American Institute of Physics

Direitos

Metals

(c) American Institute of Physics, 2002

Palavras-Chave #Metalls #Semiconductors #Magnetoresistència #Soroll #Semiconductors #Magnetoresistance #Noise
Tipo

info:eu-repo/semantics/article