Estudio de la accesibilidad de la documentación científica en soporte digital

El estudio analiza, a partir de una prueba experimental, los problemas de accesibilidad que actualmente presenta la información científica en formato digital, más concretamente los artículos científicos en soporte digital que actualmente se pueden consultar a través de los portales de acceso a las revistas electrónicas y en los repositorios abiertos ("open access") de literatura científica. El estudio se centra en los aspectos de facilidad de uso del contenido de los documentos, sin entrar en la observación de los distintos sistemas de recuperación.Se han analizado los dos formatos más utilizados para la publicación de artículos científicos en soporte digital: HTML y PDF, estudiando la variabilidad interna que representa la presencia de sumarios o de tablas de datos internas o vinculadas.Esta investigación se ha realizado a partir del trabajo experimental con dos colectivos: sujetos ciegos y sujetos no ciegos. El primer grupo se ha concretado en 30 sujetos ciegos que han colaborado de forma voluntaria y que han sido contactados gracias a la mediación de la Fundación ONCE. El segundo grupo se ha concretado en 30 profesores del Departamento de Biblioteconomía y Documentación de la Universidad de Barcelona.

L'anatomia microscòpica de les plantes

The microscopic anatomy of plants. A review of the main treatises on Plant Microscopic Anatomy and their translations published along the XX century is followed by a discussion on various aspects of the structure in plant cells, methodological questions and teminology. Problems related to using dry specimens from herbaria for microscopic studies are considered. As an example, a study has been made on a species named in memory of Prof. Dr. Oriol de Bolòs, Delphinium bolosii (BLANCHÉ and MOLERO, 1983).

Variacion del modulo de 'Young' con el tratamiento termico en aceros al carbono hipoeutectoides

En trabajos anteriores se ha constatado que varios aceros al carbono hipoeutectoides, en estado de temple, presentan valores del módulo de Young inferiores a los correspondientes en estado de revenido. En todos los casos la determinación se ha realizado mediante ultrasonidos. En concreto, para el acero C22E (EN 10083), el módulo se incrementa ligeramente desde 209 GPa (material templado) hasta 211 GPa (revenido a 650 °C), para el acero C45E el módulo aumenta desde 199 GPa hasta 211 GPa (revenido a 500 °C) y para el acero C55E el módulo varía desde 202 GPa hasta 209 GPa para el acero revenido a 650 °C. El presente trabajo se centra en la caracterización estructural de los tres aceros mencionados a los distintos estados de tratamiento térmico, utilizando las técnicas de microscopía óptica de reflexión y microscopía electrónica de barrido, y se propone una explicación de la variación del módulo a partir del comportamiento de las dislocaciones y su interacción con átomos de soluto y con otras dislocaciones.

Creació musical i improvisació. Crèdit variable per a primer cicle d'ESO

Document en què es proposen una sèrie d'activitats pràctiques ordenades i agrupades en sessions, per tal de treballar la creativitat i la improvisació musical amb els alumnes de secundària.

La mediació i l'arbitratge de consum: explorar sistemes d'ODR

La utilització dels mitjans alternatius de resolució de conflictes (ADR) en l'àmbit de les reclamacions de consum té un marc legal específic a Espanya -i també a la UE- des del 1993, que deriva de les seves característiques especials. Algunes són d'encuny exclusivament jurídic: es tracta de reclamacions en què el marc legal aplicable és el denominat dret de consum; d'altres tenen un suport bàsicament fàctic: solen tenir poca entitat econòmica, és a dir, entren en la categoria del que denominem small claims, i el fet que les reclamacions -en alguns casos que van en augment- siguin transfrontereres condiciona l'opció entre jurisdicció tradicional i ADR, com també tindrem ocasió d'analitzar. Cal afegir a aquests elements jurídics i fàctics un element important de política legislativa en un àmbit de la UE: els ADR s'entenen com un instrument bàsic per a garantir l'accés dels consumidors a la justícia, però alhora, en l'àmbit del comerç electrònic, són un element de gran transcendència en la creació de la denominada confiança electrònica o e-confidence. Per aquest motiu, s'exploren contínuament proces- sos de resolució en línia de conflictes (on-line dispute resolution, ODR). Els ODR pretenen la màxima eficàcia oferint un suport tècnic capaç de solucionar una controvèrsia amb la intervenció d'un tercer o sense, i dins o fora de l'organització de l'empresari. D'aquesta manera, s'usa un mateix expedient tècnic per a posar en marxa successivament més d'un ADR, o es potencien els mecanismes automàtics que prescindeixen dels conceptes jurídics i, en mig de l'exploració constant, Espanya aposta per l'arbitratge electrònic de consum en el RD 236/2008. A aquests temes ens referirem a continuació.

Vacancy and interstitial depth profiles in ion-implanted silicon

An experimental method of studying shifts between concentration-versus-depth profiles of vacancy- and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy¿oxygen center, and the interstitial profile, represented by the interstitial carbon¿substitutional carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. The effect of the capture in the Debye tail has been extensively studied and taken into account. Thus, the two profiles can be recorded with a high relative depth resolution. Using low doses, point defects have been introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature. The effect of the angle of ion incidence has also been investigated. For all implantation conditions the peak of the interstitial profile is displaced towards larger depths compared to that of the vacancy profile. The amplitude of this displacement increases as the width of the initial point defect distribution increases. This behavior is explained by a simple model where the preferential forward momentum of recoiling silicon atoms and the highly efficient direct recombination of primary point defects are taken into account.

Electron capture and emission by the Ti acceptor level in GaP

Previously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture.

Unipolar transport and shot noise in metal-semiconductor-metal structures

We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed in studying the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charge limited diode. We show that these structures display shot noise at the highest voltages. Remarkably the crossover from Nyquist noise to shot noise exhibits a complicated behavior with increasing current where an initial square root dependence (double thermal noise) is followed by a cubic power law.

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization.

Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursors

This paper reports the microstructural analysis of S-rich CuIn(S,Se)2 layers produced by electrodeposition of CuInSe2 precursors and annealing under sulfurizing conditions as a function of the temperature of sulfurization. The characterization of the layers by Raman scattering, scanning electron microscopy, Auger electron spectroscopy, and XRD techniques has allowed observation of the strong dependence of the crystalline quality of these layers on the sulfurization temperature: Higher sulfurization temperatures lead to films with improved crystallinity, larger average grain size, and lower density of structural defects. However, it also favors the formation of a thicker MoS2 interphase layer between the CuInS2 absorber layer and the Mo back contact. Decreasing the temperature of sulfurization leads to a significant decrease in the thickness of this intermediate layer and is also accompanied by significant changes in the composition of the interface region between the absorber and the MoS2 layer, which becomes Cu rich. The characterization of devices fabricated with these absorbers corroborates the significant impact of all these features on device parameters as the open circuit voltage and fill factor that determine the efficiency of the solar cells.

Improved multiexponential transient spectroscopy by iterative deconvolution

The analysis of multiexponential decays is challenging because of their complex nature. When analyzing these signals, not only the parameters, but also the orders of the models, have to be estimated. We present an improved spectroscopic technique specially suited for this purpose. The proposed algorithm combines an iterative linear filter with an iterative deconvolution method. A thorough analysis of the noise effect is presented. The performance is tested with synthetic and experimental data.

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

The microstructure of CuInS2-(CIS2) polycrystalline films deposited onto Mo-coated glass has been analyzed by Raman scattering, Auger electron spectroscopy (AES), transmission electron microscopy, and x-ray diffraction techniques. Samples were obtained by a coevaporation procedure that allows different Cu-to-In composition ratios (from Cu-rich to Cu-poor films). Films were grown at different temperatures between 370 and 520-°C. The combination of micro-Raman and AES techniques onto Ar+-sputtered samples has allowed us to identify the main secondary phases from Cu-poor films such as CuIn5S8 (at the central region of the layer) and MoS2 (at the CIS2/Mo interface). For Cu-rich films, secondary phases are CuS at the surface of as-grown layers and MoS2 at the CIS2/Mo interface. The lower intensity of the MoS2 modes from the Raman spectra measured at these samples suggests excess Cu to inhibit MoS2 interface formation. Decreasing the temperature of deposition to 420-°C leads to an inhibition in observing these secondary phases. This inhibition is also accompanied by a significant broadening and blueshift of the main A1 Raman mode from CIS2, as well as by an increase in the contribution of an additional mode at about 305 cm-1. The experimental data suggest that these effects are related to a decrease in structural quality of the CIS2 films obtained under low-temperature deposition conditions, which are likely connected to the inhibition in the measured spectra of secondary-phase vibrational modes.