Four-level systems and a universal quantum gate

We discuss the possibility of implementing a universal quantum XOR gate by using two coupled quantum dots subject to external magnetic fields that are parallel and slightly different. We consider this system in two different field configurations. In the first case, parallel external fields with the intensity difference at each spin being proportional to the time-dependent interaction between the spins. A general exact solution describing this system is presented and analyzed to adjust field parameters. Then we consider parallel fields with intensity difference at each spin being constant and the interaction between the spins switching on and off adiabatically. In both cases we adjust characteristics of the external fields (their intensities and duration) in order to have the parallel pulse adequate for constructing the XOR gate. In order to provide a complete theoretical description of all the cases, we derive relations between the spin interaction, the inter-dot distance, and the external field. (C) 2008 WILEYNCH Verlag GmbH & Co. KGaA. Weinheim.

Effects of confinement on the electron-phonon interaction in Al(0.18)Ga(0.82)As/GaAs quantum wells

Photoluminescence measurements at different temperatures have been performed to investigate the effects of confinement on the electron-phonon interaction in GaAs/AlGaAs quantum wells (QWs). A series of samples with different well widths in the range from 150 up to 750 A was analyzed. Using a fitting procedure based on the Passler-p model to describe the temperature dependence of the exciton recombination energy, we determined a fit parameter which is related to the strength of the electron-phonon interaction. On the basis of the behavior of this fit parameter as a function of the well width thickness of the samples investigated, we verified that effects of confinement on the exciton recombination energy are still present in QWs with well widths as large as 450 angstrom. Our findings also show that the electron-phonon interaction is three times stronger in GaAs bulk material than in Al(0.18)Ga(0.82)As/GaAs QWs.

All-optical switching device for infrared based on PbTe quantum dots

Multilayers of PbTe quantum dots embedded in SiO2 were fabricated by alternate use of Pulsed Laser Deposition (PLD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. The morphological properties of the nanostructured material were studied by means of High Resolution Transmission Electron Microscopy (HRTEM), Grazing-Incidence Small-Angle X-ray scattering (GISAXS) and X-ray Reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles. Finally multilayers were fabricated inside a Fabry-Perot cavity. The device was characterized by means of Scanning Electron Microscopy (SEM). Transmittance measurements show the device functionality in the infrared region. (C) 2007 Elsevier Ltd. All rights reserved.

Exclusive processes in electron-ion collisions

The exclusive processes in electron-ion (eA) interactions are an important tool to investigate the QCD dynamics at high energies as they are in general driven by the gluon content of the target which is strongly subject to parton saturation effects. In this Letter we compute the cross sections for the exclusive vector meson production as well as the deeply virtual Compton scattering (DVCS) relying on the color dipole approach and considering the numerical solution of the Balitsky-Kovchegov equation including running coupling corrections (rcBK). The production cross sections obtained with the rcBK solution and bCGC parametrization are very similar, the former being slightly larger. (C) 2011 Elsevier B.V. All rights reserved.

Dipole polarizability and Rayleigh light scattering by the hydrated electron

Assuming the existence of a confined state of the electron in bulk water the polarizability of the hydrated electron is analyzed. Statistically uncorrelated supermolecular structures composed of seven water molecules (first solvation shell) with an extra electron were extracted from classical Monte Carlo simulation and used in quantum mechanical second-order Moller-Plesset calculations. It is found that the bound excess electron contributes with 274 a.u. to the total dipole polarizability of 345 a.u. for (H(2)O)(7)(-). From the calculated polarizabilities the Rayleigh elastic light scattering properties are inferred and found to considerably enhance activity and light depolarization. (C) 2009 Elsevier B.V. All rights reserved.

Fractional quantum Hall effect in second subband of a 2DES

In the present paper we report on the experimental electron sheet density vs. magnetic field diagram for the magnetoresistance R(xx) of a two-dimensional electron system (2DES) with two occupied subbands. For magnetic fields above 9T, we found fractional quantum Hall levels centered around the filing factor v = 3/2 in both the two occupied electric subbands. We focused specially on the fractional levels of the second subband, whose experimental values of the magnetic field B of their minima do not obey a periodicity law in 1/|B-B(c)|, where B(c) is the critical field at the filling factor v = 3/2, and we explain this fact entirely in the framework of the composite fermions theory. We use a simple theoretical model to give a possible explanation for the fact. Copyright (c) EPLA, 2011

Microwave induced magnetoresistance oscillations and inelastic scattering time in double quantum wells

The interference of microwave-induced resistance oscillations and magneto-intersubband oscillations in double quantum wells exposed to a continuous microwave irradiation is under study. By comparing experimental and theoretical magnetoresistance traces at different temperatures, we confirm that the inelastic mechanism of photoresistance explains our observations up to T similar or equal to 4 K. For higher temperatures, our results suggest a deviation of the inelastic scattering time tau(in) from the predicted T(-2) dependence. (C) 2009 Elsevier B.V. All rights reserved.

Magneto-intersubband oscillations in triple quantum wells

We present magnetotransport studies of high-density triple quantum well samples with different barrier widths. Because of electron transitions between three occupied 2D subbands, the magneto-resistance shows magneto-intersubband oscillations whose periodicity is determined by the subband separation energies. Temperature-dependent measurements allow us to extract quantum lifetime of electrons. A theoretical consideration of the observed phenomenon is also presented. (C) 2009 Elsevier B.V. All rights reserved.

QUANTUM HALL FERROMAGNET IN A DOUBLE WELL WITH VANISHING g-FACTOR.

We have studied the quantum Hall effect in Al(x)Ga(1-x)As-double well structure with vanishing g-factor. We determined the density-magnetic field n(s) - B diagrams for the longitudinal resistance R(xx). In spite of the fact that the n(s) - B diagram for conventional GaAs double wells shows a striking similarity with the theory, we observed the strong difference between these diagrams for double wells with vanishing g-factor. We argue that the electron-electron interaction is responsible for unusual behavior of the Landau levels in such a system.

MAGNETORESISTANCE OSCILLATIONS IN DOUBLE QUANTUM WELLS UNDER MICROWAVE IRRADIATION

We report in detail oscillatory magnetoresistance in double quantum wells under microwave irradiation. The experimental investigation contains measurements of frequency, power and temperature dependence. In theory, the observed interference oscillations are explained in terms of the influence of subband coupling on the frequency-dependent photoinduced part of the electron distribution function. Thus, the magnetoresistance shows the interference of magneto-intersubband and conventional microwave induced resistance oscillations.

Could saturation effects be visible in a future electron-ion collider?

We expect to observe parton saturation in a future electron-ion collider. In this Letter we discuss this expectation in more detail considering two different models which are in good agreement with the existing experimental data on nuclear structure functions. In particular, we study the predictions of saturation effects in electron-ion collisions at high energies, using a generalization for nuclear targets of the b-CGC model, which describes the ep HERA quite well. We estimate the total. longitudinal and charm structure functions in the dipole picture and compare them with the predictions obtained using collinear factorization and modern sets of nuclear parton distributions. Our results show that inclusive observables are not very useful in the search for saturation effects. In the small x region they are very difficult to disentangle from the predictions of the collinear approaches. This happens mainly because of the large uncertainties in the determination of the nuclear parton distribution functions. On the other hand, our results indicate that the contribution of diffractive processes to the total cross section is about 20% at large A and small Q(2), allowing for a detailed study of diffractive observables. The study of diffractive processes becomes essential to observe parton Saturation. (C) 2008 Elsevier B.V. All rights reserved.

PL spectroscopy of Fermi electrons in regime of the quantum Hall effect

The influence of the interlayer coupling on formation of the quantized Hall phase at the filling factor v = 2 was studied in the multilayer GaAs/AlGaAs heterostructures The disorder broaden Gaussian photoluminescence line due to the localized electrons was found in the quantized Hall phase of the isolated multi-quantum well structure On the other hand. the quantized Hall phase of the weakly-coupled multilayers emitted an asymmetrical line similar to that one observed in the metallic electron systems. We demonstrated that the observed asymmetry indicates a formation of the Fermi Surface in the quantized Hall phase of the multilayer electron system due to the interlayer peicolation. A sharp decrease of the single-particle scattering time associated with the extended states oil the Fermi surface was observed at the filling factor v = 2. (C) 2009 Elsevier B.V All rights reserved

Compressibility of electron liquid in the quantized Hall phase of GaAs/AlGaAs multi-layers

Magneto-capacitance was studied in narrow miniband GaAs/AlGaAs superlattices where quasi-two dimensional electrons revealed the integer quantum Hall effect. The interwell tunneling was shown to reduce the effect of the quantization of the density of states on the capacitance of the superlattices. In such case the minimum of the capacitance observed at the filling factor nu = 2 was attributed to the decrease of the electron compressibility due to the formation of the incompressible quantized Hall phase. In accord with the theory this phase was found strongly inhomogeneous. The incompressible fraction of the quantized Hall phase was demonstrated to rapidly disappear with the increasing temperature. (C) 2008 Elsevier B.V. All rights reserved.

Directed self-assembly of quantum structures by nanomechanical stamping using probe tips

We demonstrate that nanomechanically stamped substrates can be used as templates to pattern and direct the self-assembly of epitaxial quantum structures such as quantum dots. Diamond probe tips are used to indent or stamp the surface of GaAs( 100) to create nanoscale volumes of dislocation-mediated deformation, which alter the growth surface strain. These strained sites act to bias nucleation, hence allowing for selective growth of InAs quantum dots. Patterns of quantum dots are observed to form above the underlying nanostamped template. The strain state of the patterned structures is characterized by micro-Raman spectroscopy. The potential of using nanoprobe tips as a quantum dot nanofabrication technology are discussed.

Experimental Evidence of the Occurrence of Intramolecular Electron Transfer in Catalyzed 1,2-Dioxetane Decomposition

The activation parameters for the thermal decomposition of 13 acridinium-substituted 1,2-dioxetanes, bearing an aromatic moiety, were determined and their chemiluminescence emission quantum yields estimated, utilizing in situ photosensitized 1,2-dioxetane generation and observation of its thermal decomposition kinetics, without isolation of these highly unstable cyclic peroxides. Decomposition rate constants show linear free-energy correlation for electron-withdrawing substituents, with a Hammett reaction constant of rho = 1.3 +/- 0.1, indicating the occurrence of an intramolecular electron transfer from the acridinium moiety to the 1,2-dioxetane ring, as postulated by the intramolecular chemically initiated electron exchange luminescence (CIEEL) mechanism. Emission quantum yield behavior can also be rationalized on the basis of the intramolecular CIEEL mechanism, additionally evidencing its occurrence in this transformation. Both relations constitute the first experimental evidence for the occurrence of the postulated intramolecular electron transfer in the catalyzed and induced decomposition of properly substituted 1,2-dioxetanes.