Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted magnetic semiconductors (DMS) are alternate, are one of the possible ways to obtain it. Si being the basis of modern electronics, Si or other group-IV DMH can be used to build spintronic devices directly integrated with conventional ones. In this work we study the physical properties and the spin-polarization effects of p-type DMH based in group-IV semiconductors (Si, Ge, SiGe, and SiC), by performing self-consistent (k) over right arrow . (p) over right arrow calculations in the local spin density approximation. We show that high spin polarization can be maintained in these structures below certain values of the carrier concentrations. Full spin polarization is attained in the low carrier concentration regime for carrier concentrations in the DMS layer up to similar to 2.0 x 10(19) cm(-3) for Si and up to similar to 6.0 x 10(19) cm(-3) for SiC. Partial, but still important spin polarization can be achieved for all studied group-IV DMH, with the exception of Ge for carrier concentrations up to 6.0 x 10(19) cm(-3). The role played by the effective masses and the energy splitting of the spin-orbit split-off hole bands is also discussed throughout the paper.

Thermal dependence of the zero-bias conductance through a nanostructure

We show that the conductance of a quantum wire side-coupled to a quantum dot, with a gate potential favoring the formation of a dot magnetic moment, is a universal function of the temperature. Universality prevails even if the currents through the dot and the wire interfere. We apply this result to the experimental data of Sato et al. (Phys. Rev. Lett., 95 (2005) 066801). Copyright (C) EPLA, 2009

Crystal growth and magnetic properties of tin selenide-doped europium Sn(1-x)Eu(x)Se

The growth and magnetic properties of Tin Selenide (SnSe) doped with Eu(2+) Sn(1-x)Eu(x)Se (x=2.5%) were investigated. Q-band (34 GHz) electron paramagnetic resonance measurements show that the site symmetry of Eu(2+) at 4.2 K is orthorhombic and the Lande factor was determined to be g=1.99 +/- 0.01. The exchange coupling between nearest-neighbor (NN) Eu(2+) ions was estimated from magnetization and magnetic-susceptibility measurements using a model that takes into account the magnetic contributions of single ions, pairs and triplets. The exchange interaction between Eu(2+) nearest neighbors was found to be antiferromagnetic with an estimated average value of J(p)/k(B) =-0.18 +/- 0.03 K. (C) 2009 Elsevier B.V. All rights reserved.

Magnetic and optical characterization of Mn-doped PbS nanocrystals supported in oxide glass matrix

The evidence of successful growth of Mn-doped PbS (Pb(1-x)Mn(x)S) nanocrystals (NCs) in SiO(2)-Na(2)CO(3)-Al(2)O(3)-PbO(2)-B(2)O(3) template, using the fusion method, is reported on in this study. The as-grown Pb(1-x)Mn(x)S NC is characterized using optical absorption, electron paramagnetic resonance, and atomic force microscopy. The data are discussed in terms of two distinct scenarios, namely a core-doped and a shell-doped nanostructure. (C) 2008 Elsevier B.V. All rights reserved.