Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon

Single-point diamond turning of monocrystalline semiconductors is an important field of research within brittle materials machining. Monocrystalline silicon samples with a (100) orientation have been diamond turned under different cutting conditions (feed rate and depth of cut). Micro-Raman spectroscopy and atomic force microscopy have been used to assess structural alterations and surface finish of the samples diamond turned under ductile and brittle modes. It was found that silicon undergoes a phase transformation when machined in the ductile mode. This phase transformation is evidenced by the creation of an amorphous surface layer after machining which has been probed by Raman scattering. Compressive residual stresses are estimated for the machined surface and it is observed that they decrease with an increase in the feed rate and depth of cut. This behaviour has been attributed to the formation of subsurface cracks when the feed rate is higher than or equal to 2.5 mu m/rev. The surface roughness was observed to vary with the feed rate and the depth of cut. An increase in the surface roughness was influenced by microcrack formation when the feed rate reached 5.0 mu m/rev. Furthermore, a high-pressure phase transformation induced by the tool/material interaction and responsible for the ductile response of this typical brittle material is discussed based upon the presented Raman spectra. The application of this machining technology finds use for a wide range of high quality components, for example the creation of a micrometre-range channel for microfluidic devices as well as microlenses used in the infrared spectrum range.

The Ultrastructural Study of Tumorigenic Cells Using Nanobiomarkers

Despite recent advances, patients with malignant brain tumors still have a poor prognosis. Glioblastoma (WHO grade 4 astrocytoma), the most malignant brain tumor, represents 50% of all astrocytomas, with a median survival rate of <1 year. It is, therefore, extremely important to search for new diagnostic and therapeutic approaches for patients with glioblastoma. This study describes the application of superparamagnetic nano-particles of iron oxide, as well as monoclonal antibodies, of immunophenotypic significance, conjoined to quantum dots for the ultrastructural assessment of glioblastoma cells. For this proposal, an immunophenotypic study by flow cytometry was carried out, followed by transmission electron microscopy analysis. The process of tumor cell labeling using nanoparticles can successfully contribute to the identification of tumorigenic cells and consequently for better understanding of glioblastoma genesis and recurrence. In addition, this method may help further studies in tumor imaging, diagnosis, and prognostic markers detection.

Application of Low-Level Laser Irradiation (LLLI) and rhBMP-2 in Critical Bone Defect of Ovariectomized Rats: Histomorphometric Evaluation

Objectives: The aim of this study was to evaluate the osteogenic potential of recombinant human bone morphogenetic protein-2 (rhBMP-2) and low-level laser irradiation (LLLI), isolated or combined in critical bone defects (5mm) in parietal bone using ovariectomized female rats as an experimental animal model. Materials and Methods: Forty-nine female Wistar rats, bilaterally ovariectomized (OVX), were divided into seven treatment groups of seven animals each: (I) laser in a single application, (II) 7 mu g of pure rhBMP-2, (III) laser and 7 mu g of pure rhBMP-2, (IV) 7 mu g of rhBMP-2/monoolein gel, (V) laser and 7 mu g of rhBMP-2/monoolein gel, (VI) laser and pure monoolein gel, and (VII) critical bone defect controls. The low-level laser source used was a gallium aluminum arsenide semiconductor diode laser device (lambda = 780 nm, D = 120 J/cm(2)). Results: Groups II and III presented higher levels of newly formed bone than all other groups with levels of 40.57% and 40.39%, respectively (p < 0.05). The levels of newly formed bone of groups I, IV, V, and VI were similar with levels of 29.67%, 25.75%, 27.75%, and 30.64%, respectively (p > 0.05). The area of new bone formation in group VII was 20.96%, which is significantly lower than groups I, II, III, and VI. Conclusions: It was concluded that pure rhBMP-2 and a single dose of laser application stimulated new bone formation, but the new bone formation area was significantly increased when only rhBMP-2 was used. Additionally, the laser application in combination with other treatments did not influence the bone formation area.

Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method

In the case of quantum wells, the indium segregation leads to complex potential profiles that are hardly considered in the majority of the theoretical models. The authors demonstrated that the split-operator method is useful tool for obtaining the electronic properties in these cases. Particularly, they studied the influence of the indium surface segregation in optical properties of InGaAs/GaAs quantum wells. Photoluminescence measurements were carried out for a set of InGaAs/GaAs quantum wells and compared to the results obtained theoretically via split-operator method, showing a good agreement.

Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction

An x-ray diffraction method, based on the excitation of a surface diffracted wave, is described to investigate the capping process of InAs/GaAs (001) quantum dots (QDs). It is sensitive to the tiny misorientation of (111) planes at the surface of the buffer layer on samples with exposed QDs. After capping, the misorientation occurs in the cap-layer lattice faceting the QDs and its magnitude can be as large as 10 degrees depending on the QDs growth rates, probably due to changes in the size and shape of the QDs. A slow strain release process taking place at room temperature has also been observed by monitoring the misorientation angle of the (111) planes.

Dynamic transitions in a three dimensional associating lattice gas model

The aggregation of interacting Brownian particles in sheared concentrated suspensions is an important issue in colloid and soft matter science per se. Also, it serves as a model to understand biochemical reactions occurring in vivo where both crowding and shear play an important role. We present an effective medium approach within the Smoluchowski equation with shear which allows one to calculate the encounter kinetics through a potential barrier under shear at arbitrary colloid concentrations. Experiments on a model colloidal system in simple shear flow support the validity of the model in the concentration range considered. By generalizing Kramers' rate theory to the presence of shear and collective hydrodynamics, our model explains the significant increase in the shear-induced reaction-limited aggregation kinetics upon increasing the colloid concentration.

Spin-Orbit Coupling in n-Type PbTe/PbEuTe Quantum Wells

Magnetoresistance measurements were performed on an n-type PbTe/PbEuTe quantum well and weak antilocalization effects were observed. This indicates the presence of spin orbit coupling phenomena and we showed that the Rashba effect is the main mechanism responsible for this spin orbit coupling. Using the model developed by Iordanskii et al., we fitted the experimental curves and obtained the inelastic and spin orbit scattering times. Thus we could compare the zero field energy spin-splitting predicted by the Rashba theory with the energy spin-splitting obtained from the analysis of the experimental curves. The final result confirms the theoretical prediction of strong Rashba effect on IV-VI based quantum wells.

Transport in disordered two-dimensional topological insulators

The transport properties of the ""inverted"" semiconductor HgTe-based quantum well, recently shown to be a two-dimensional topological insulator, are studied experimentally in the diffusive regime. Nonlocal transport measurements are performed in the absence of magnetic field, and a large signal due to the edge states is observed. This shows that the edge states can propagate over a long distance, similar to 1 mm, and therefore, there is no difference between local and nonlocal electrical measurements in a topological insulator. In the presence of an in-plane magnetic field a strong decrease of the local resistance and complete suppression of the nonlocal resistance is observed. We attribute this behavior to an in-plane magnetic-field-induced transition from the topological insulator state to a conventional bulk metal state.

Magnetoresistance oscillations in multilayer systems: Triple quantum wells

Magnetoresistance of two-dimensional electron systems with several occupied subbands oscillates owing to periodic modulation of the probability of intersubband transitions by the quantizing magnetic field. In addition to previous investigations of these magnetointersubband (MIS) oscillations in two-subband systems, we report on both experimental and theoretical studies of such a phenomenon in three-subband systems realized in triple quantum wells. We show that the presence of more than two subbands leads to a qualitatively different MIS oscillation picture, described as a superposition of several oscillating contributions. Under a continuous microwave irradiation, the magnetoresistance of triple-well systems exhibits an interference of MIS oscillations and microwave-induced resistance oscillations. The theory explaining these phenomena is presented in the general form, valid for an arbitrary number of subbands. A comparison of theory and experiment allows us to extract temperature dependence of quantum lifetime of electrons and to confirm the applicability of the inelastic mechanism of microwave photoresistance for the description of magnetotransport in multilayer systems.

Classical and quantum magnetoresistance in a two-subband electron system

We observe a large positive magnetoresistance in a bilayer electron system (double quantum well) as the latter is driven by the external gate from double to single layer configuration. Both classical and quantum contributions to magnetotransport are found to be important for explanation of this effect. We demonstrate that these contributions can be separated experimentally by studying the magnetic-field dependence of the resistance at different gate voltages. The experimental results are analyzed and described by using the theory of low-field magnetotransport in the systems with two occupied subbands.

Approximation to density functional theory for the calculation of band gaps of semiconductors

The local-density approximation (LDA) together with the half occupation (transitionstate) is notoriously successful in the calculation of atomic ionization potentials. When it comes to extended systems, such as a semiconductor infinite system, it has been very difficult to find a way to half ionize because the hole tends to be infinitely extended (a Bloch wave). The answer to this problem lies in the LDA formalism itself. One proves that the half occupation is equivalent to introducing the hole self-energy (electrostatic and exchange correlation) into the Schrodinger equation. The argument then becomes simple: The eigenvalue minus the self-energy has to be minimized because the atom has a minimal energy. Then one simply proves that the hole is localized, not infinitely extended, because it must have maximal self-energy. Then one also arrives at an equation similar to the self- interaction correction equation, but corrected for the removal of just 1/2 electron. Applied to the calculation of band gaps and effective masses, we use the self- energy calculated in atoms and attain a precision similar to that of GW, but with the great advantage that it requires no more computational effort than standard LDA.

Linear and nonlinear transport in a small charge-tunable open quantum ring

We experimentally study the Aharonov-Bohm-conductance oscillations under external gate voltage in a semiconductor quantum ring with a radius of 80 nm. We find that, in the linear regime, the resistance-oscillation plot in the voltage-magnetic-field plane corresponds to the quantum ring energy spectra. The chessboard pattern assembled by resistance diamonds, while loading the ring, is attributed to a short electron lifetime in the open configuration, which agrees with calculations within the single-particle model. Remarkably, the application of a small dc current allows observing strong deviations in the oscillation plot from this pattern accompanied by a magnetic-field symmetry break. We relate such behavior to the higher-order-conductance coefficients determined by electron-electron interactions in the nonlinear regime.

Quantum confinement effects on Mn-doped InAs nanocrystals: A first-principles study

We studied the effect of quantum confinement in Mn-doped InAs nanocrystals using theoretical methods. We observe that the stability of the impurities decreases with the size of the nanocrystals, making doping more difficult in small nanoparticles. Substitutional impurities are always more stable than interstitial ones, independent of the size of the nanocrystal. There is also a decrease in the energy difference between the high and low spin configurations, indicating that the critical temperature should decrease with the size of the nanoparticles, in agreement with experimental observations and in detriment to the development of functional spintronic devices with doped nanocrystals. Codoping with acceptors or saturating the nanocrystals with molecules that insert partially empty levels in the energy gap should be an efficient way to increase T(C).

Carrier transfer in the optical recombination of quantum dots

We report a study of dynamic effects detected in the time-resolved emission from quantum dot ensembles. Experimental procedures were developed to search for common behaviors found in quantum dot systems independently of their composition: three quantum dot samples were experimentally characterized. Systems with contrasting interdot coupling are compared and their sensitivity to the excitation energy is analyzed. Our experimental results are compared and contrasted with other results available in literature. The optical recombination time dependence on system parameters is derived and compared to the experimental findings. We discuss the effects of occupation of the ground state in both valence and conduction bands of semiconductor quantum dots in the dynamics of the system relaxation as well as the nonlinear effects.

Contrasting LH-HH subband splitting of strained quantum wells grown along [001] and [113] directions

Contrasting responses for the temperature tuning of the electronic structure in semiconductor quantum wells are discussed for heterolayered structures grown along (001) and (113) directions. The temperature affects the strain modulation of the deformation potentials and the effective optical gap is tuned along with the intersub-band splitting in the valence band. A multiband theoretical model accounts for the characterization of the electronic structure, highlighting the main qualitative and quantitative differences between the two systems under study. The microscopic source of strain fields and the detailed mapping of their distribution are provided by a simulation using classical molecular-dynamics technics.