Lattice damage produced in GaN by swift heavy ions

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au-197(16+) ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire similar to1.5-mum-thick GaN film. These tracks, similar to100 Angstrom in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to similar to10(13) cm(-2). For larger fluences, delamination of the nitride film from the sapphire substrate occurs. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. (C) 2004 American Institute of Physics.

Charge-based quantum computing using single donors in semiconductors

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in the atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor crystal, one of which is singly ionized. Surface electrodes control the qubit and a radio-frequency single-electron transistor provides fast readout. The calculated single gate times, of order 50 ps or less, are much shorter than the expected decoherence time. We propose universal one- and two-qubit gate operations for this system and discuss prospects for fabrication and scale up.

A novel method for the production of aluminium nitride

A method has been developed to produce thick (> 400 mu m) AlN surface layers oil aluminium plates at 540 degrees C, under nitrogen at atmospheric pressure. A critical element of the process is the use of Mg powder placed in close proximity to the Al plate surface. The Mg reduces/disrupts the natural, protective oxide film on the Al surface. The nitride layers form through two distinct modes, one growing outward from the Al plate surface and the other growing into the Al. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Characteristics of low temperature PECVD silicon nitride for MEMS structural materials

Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.

Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

The effect of deposition conditions on characteristic mechanical properties - elastic modulus and hardness - of low-temperature PECVD silicon nitrides is investigated using nanoindentation. lt is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mechanical properties and film density are demonstrated. The silicon nitride density in turn is shown to be related to the chemical composition of the films, particularly the silicon/nitrogen ratio. (c) 2006 Elsevier B.V. All rights reserved.