Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling

Controlled polishing procedures were used to produce both uniformly doped and p-n junction silicon samples with different interface state densities but identical oxide thicknesses. Using these samples, the effects of interface states on scanning capacitance microscopy (SCM) measurements could be singled out. SCM measurements on the junction samples were performed with and without illumination from the atomic force microscopy laser. Both the interface charges and the illumination were seen to affect the SCM signal near p-n junctions significantly. SCM p-n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and in the simulation. (c) 2005 American Institute of Physics.

Microstructures and electrolytic properties of yttrium-doped ceria electrolytes: Dopant concentration and grain size dependences

The microstructures and electrolytic properties of YxCe1-xO2-x/2 (x = 0.10-0.25) electrolytes with average grain size in the range 90 nm-1.7 mu m were systematically investigated. Through detailed transmission electron microscopy characterization, nanosized domains were observed. The relationship of the domains, the doping level and grain sizes were determined, and their impacts on the electrolytic properties were systematically studied. It was found that the formation of domains has a negative impact on the electrolytic properties, so that electrolytic properties can be adjusted through careful control of domain formation, doping level and grain size. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.