5 resultados para deposition temperature

em University of Queensland eSpace - Australia


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The turbostratic mesoporous carbon blacks were prepared by catalytic chemical vapour decomposition (CCVD) of acetylene using Ni/MgO catalysts prepared by co-precipitation. The relationship between deposition conditions and the nanostructures of resultant carbon black materials was investigated. It was found that the turbostratic and textural structures of carbon blacks are dependent on the deposition temperature and nickel catalyst loading. Higher deposition temperature increases the carbon crystallite unit volume V-nano and reduces the surface area of carbon samples. Moreover, a smaller V-nano is produced by a higher Ni loading at the same deposition temperature. In addition of the pore structure and the active metal surface area of the catalyst, the graphitic degree or electronic conductivity of the carbon support is also a key issue to the activity of the supported catalyst. V-nano is a very useful parameter to describe the effect of the crystalline structure of carbon blacks on the reactivity of carbon blacks in oxygen-carbon reaction and the catalytic activity of carbon-supported catalyst in ammonia decomposition semi-quantitatively. (C) 2006 Elsevier B.V. All rights reserved.

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The effect of deposition conditions on characteristic mechanical properties - elastic modulus and hardness - of low-temperature PECVD silicon nitrides is investigated using nanoindentation. lt is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mechanical properties and film density are demonstrated. The silicon nitride density in turn is shown to be related to the chemical composition of the films, particularly the silicon/nitrogen ratio. (c) 2006 Elsevier B.V. All rights reserved.

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The first success in the preparation of rare earth hydroxycarbonate thin films has been achieved. Cerium hydroxycarbonate films were prepared by a hydrothermal deposition method, the sample of a single orthorhombic phase was deposited at a lower temperature while those of orthorhombic and hexagonal phases were obtained at higher temperatures. The crystals in the films could be ellipsoidal, prismatic, or rhombic, depending on the deposition conditions applied. The thin films could be candidates for developing novel optical materials and for advanced ceramics processing. (C) 2003 Elsevier Science B.V. All rights reserved.

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In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10 K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states. (C) 2004 Elsevier B.V. All rights reserved.

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Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.