Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

The influence that trace concentrations Of SiO2 have on improving grain-boundary conduction via precursor scavenging using additional heat treatment at 1200 degreesC for 40 h before sintering was investigated. At a SiO2-impurity level (SIL) less than or equal to 160 ppm by weight, the grain-boundary resistivity (p(gb)) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL greater than or equal to 310 ppm. The correlation between the resistance per unit grain-boundary area, p(gb), and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL greater than or equal to 310 ppm. hampered the scavenging reaction.

Scavenging of siliceous grain-boundary phase of 8-mol%-ytterbia-stabilized zirconia without additive

The grain-boundary conductivity (sigma (gb),) of 8-mol%-ytterbiastabilized zirconia increased markedly with heat treatment between 1000 degrees and 1300 degreesC with a slow heating rate (0.1 degreesC/min) before sintering. The extent of the sigma (gb) improvement was the same or larger than that via Al2O3 addition. The heat treatment did not affect the grain-interior conduction when sintered at 1600 degreesC, while Al2O3-derived scavenging significantly did, given the larger increment of total conductivity in the heat-treated sample. The formation of a silicon-containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and sigma (gb).

Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia

The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250degreesC for greater than or equal to 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500degrees C). (C) 2002 The Electrochemical Society.