Scavenging of siliceous grain-boundary phase of 8-mol%-ytterbia-stabilized zirconia without additive

The grain-boundary conductivity (sigma (gb),) of 8-mol%-ytterbiastabilized zirconia increased markedly with heat treatment between 1000 degrees and 1300 degreesC with a slow heating rate (0.1 degreesC/min) before sintering. The extent of the sigma (gb) improvement was the same or larger than that via Al2O3 addition. The heat treatment did not affect the grain-interior conduction when sintered at 1600 degreesC, while Al2O3-derived scavenging significantly did, given the larger increment of total conductivity in the heat-treated sample. The formation of a silicon-containing phase in a discrete form was suggested as a possible route of scavenging the resistive phase from the correlation between average grain size and sigma (gb).