Precursor scavenging of resistive grain-boundary phase in 8 mol % ytterbia-stabilized zirconia

The grain-boundary conduction of 8 mol % ytterbia-stabilized zirconia (8YbSZ) was improved markedly by precursor scavenging via the two-stage sintering process. The most significant increase in the grain-boundary conductivity was found when the sample, whose conductivity was higher than that via Al2O3-derived scavenging, was heat-treated at 1250degreesC for greater than or equal to 20 h. The formation of a stable Si-containing phase such as ZrSiO4 during the first-stage heat-treatment was suggested as one probable scavenging route from the optimal heat-treatment temperature (HTT), long duration time (>20 h) at HTT, and the stability of the formed phase up to sintering temperatures (1500degrees C). (C) 2002 The Electrochemical Society.