The electric field effect on spin injection in tunneling regime

Using the quantum tunneling theory, we investigate the spin-dependent transport properties of the ferromagnetic metal/Schottky barrier/semiconductor heterojunction under the influence of an external electric field. It is shown that increasing the electric field, similar to increasing the electron density in semiconductor, will result in a slight enhancement of spin injection in tunneling regime, and this enhancement is significantly weakened when the tunneling Schottky barrier becomes stronger. Temperature effect on spin injection is also discussed. (C) 2003 Elsevier B.V. All rights reserved.

Rashba spin precession in a magnetic field

Spin precession due to Rashba spin-orbit coupling in a two-dimension electron gas is the basis for the spin field effect transistor, in which the overall perfect spin-polarized current modulation could be acquired. There is a prerequisite, however, that a strong transverse confinement potential should be imposed on the electron gas or the width of the confined quantum well must be narrow. We propose relieving this rather strict limitation by applying an external magnetic field perpendicular to the plane of the electron gas because the effect of the magnetic field on the conductance of the system is equivalent to the enhancement of the lateral confining potential. Our results show that the applied magnetic field has little effect on the spin precession length or period although in this case Rashba spin-orbit coupling could lead to a Zeeman-type spin splitting of the energy band.