Lattice damage produced in GaN by swift heavy ions

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au-197(16+) ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire similar to1.5-mum-thick GaN film. These tracks, similar to100 Angstrom in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to similar to10(13) cm(-2). For larger fluences, delamination of the nitride film from the sapphire substrate occurs. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. (C) 2004 American Institute of Physics.

The effect of iron on liquid film migration and sintering of an Al-Cu-Mg alloy

Analytical transmission electron microscopy indicates that liquid film migration occurs during sintering of an Al-Cu-Mg alloy, that intragranular liquid pools develop from migrating films and that iron segregates to these pools. It is suggested that a high localised iron concentration retards the liquid film migration rate by reducing the coherency strain in the retreating grain, causing a region of the film to detach from the boundary, thus forming an intragranular pool in the advancing grain. Alloys with low iron levels develop few intragranular pools and have high sintered densities. (C) 2003 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Phase equilibria in the system Fe-Zn-O at intermediate conditions between metallic-iron saturation and air

The phase equilibria in the FeO-Fe2O3-ZnO system have been experimentally investigated at oxygen partial pressures between metallic iron saturation and air using a specially developed quenching technique, followed by electron probe X-ray microanalysis (EPMA) and then wet chemistry for determination of ferrous and ferric iron concentrations. Gas mixtures of H-2, N-2, and CO2 or CO and CO2 controlled the atmosphere in the furnace. The determined metal cation ratios in phases at equilibrium were used for the construction of the 1200 degrees C isothermal section of the Fe-Zn-O system. The univariant equilibria between the gas phase, spinel, wustite, and zincite was found to be close to pO(2) = 1 center dot 10(-8) atm at 1200 degrees C. The ferric and ferrous iron concentrations in zincite and spinel at equilibrium were also determined at temperatures from 1200 degrees C to 1400 degrees C at pO(2) = 1 center dot 10(-6) atm and at 1200 degrees C at pO(2) values ranging from 1 center dot 10(-4) to 1 center dot 10(-8) atm. Implications of the phase equilibria in the Fe-Zn-O system for the formation of the platelike zincite, especially important for the Imperial Smelting Process (ISP), are discussed.

A study on transition of iron from active into passive state

An investigation was carried out on the transition of an iron electrode from active to passive state in a sulphuric acid solution. It was found that the active-passive transition was an auto-catalytic process in which a pre-passive film grew on the electrode surface. The growing pre-passive film had a fractal edge whose dimension was affected by the applied passivating potential and the presence of chlorides in the solution. Applying a more positive passivating potential led to a faster active-passive transition and resulted in a more irregular pre-passive film. If chlorides were introduced into the sulphuric acid solution, the active-passive transition became more rapid and the pre-passive film more irregular. Apart from the influence on the growth of the pre-passive film, the presence of chlorides in the passivating solution was found to deteriorate the stability of the final passive film. All these phenomena can be understood if the passivating iron electrode is regarded as a dissipative system. To explain these results, a fractal pre-film model is proposed in this paper. (C) 2004 Elsevier Ltd. All rights reserved.

A novel method for the production of aluminium nitride

A method has been developed to produce thick (> 400 mu m) AlN surface layers oil aluminium plates at 540 degrees C, under nitrogen at atmospheric pressure. A critical element of the process is the use of Mg powder placed in close proximity to the Al plate surface. The Mg reduces/disrupts the natural, protective oxide film on the Al surface. The nitride layers form through two distinct modes, one growing outward from the Al plate surface and the other growing into the Al. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Characteristics of low temperature PECVD silicon nitride for MEMS structural materials

Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.

Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

The effect of deposition conditions on characteristic mechanical properties - elastic modulus and hardness - of low-temperature PECVD silicon nitrides is investigated using nanoindentation. lt is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mechanical properties and film density are demonstrated. The silicon nitride density in turn is shown to be related to the chemical composition of the films, particularly the silicon/nitrogen ratio. (c) 2006 Elsevier B.V. All rights reserved.