Thin film sputtered silicon for silicon wafer bonding applications

The transfer of functional integrated circuit layers to other substrates is being investigated for smart-sensors, MEMS, 3-D ICs and mixed semiconductor circuits. There is a need for a planarisation and bondable layer which can be deposited at low temperature and which is IC compatible. This paper describes for the first time the successful use of sputtered silicon in this role for applications as outlined above where high temperature post bond anneals are not required. It also highlights the problems of using sputtered silicon as a bonding layer in applications where post bond temperatures greater than 400C are required.

Material effects on stress-induced defect generation in trenched silicon-on-insulator structures

We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.

Electron/positron collisions with positronium

We report results for e(+/-)-Ps(Is) scattering in the energy range up to 80 eV calculated in 9-state and 30-state coupled pseudostate approximations. Cross-sections are presented for elastic scattering, ortho-para conversion, discrete excitation, ionization and total scattering. Resonances associated with the Ps(n = 2) threshold are also examined and their positions and widths determined. Very good agreement is obtained with the variational calculations of Ward et al. [J. Phys. B 20 (1987) 127] below 5.1 eV. (C) 2004 Elsevier B.V. All rights reserved.

Positronium formation in positron-noble gas collisions

Distorted-wave Born approximation calculations for Ps formation in positron impact on He, Ne, Ar, Kr and Xe are reported for the energy range up to 200 eV. Capture into the n = 1, 2 and 3 states of Ps is calculated explicitly and 1/n(3) scaling is used to estimate capture into states with n > 3. The calculations for the heavier noble gases allow for capture not only from the outer np(6) shell of the atom but also from the first inner ns(2) shell. However, the inner shell capture is found to be very small. Although by no means unambiguous, the calculations provide some support to the conjecture of Larrichia et al. [J. Phys. B 35 (2002) 2525] that the double peak and shoulder structures observed experimentally for Ps formation in Ar, Kr and Xe arise from formation in excited states. (C) 2004 Elsevier B.V. All rights reserved.

Atomic collisions involving positrons

In this short review we look at bound states, positron-atom scattering. positronium-atom scattering. positronium-positronium scattering, cold antihydrogen and annihilation. (c) 2005 Published by Elsevier B.V.

Positronium scattering by lithium

We report cross sections for Ps(1s)-Li(2s) scattering in the energy range up to 30 eV. The calculations have been carried out in a coupled state approximation. The Ps states consist of both eigenstates and pseudostates. the latter to allow for ionization of the Ps. The atom is treated as a frozen core represented by it model potential which supports the valence orbitals. The coupled state expansion includes only the 2s and 2p states of the atom as well as in unphysical Is state which exists in the model potential. The inclusion of this Is state is necessary in order to avoid pronounced false pseudostructure. Results are presented for excitation and ionization of the Ps as well as collisions in which the Ps(1s) remains unchanged. These results also differentiate between the case where the Li(2s) remains unexcited and where it is excited to the 2p level. (c) 2005 Published by Elsevier B.V.

Single ionization of helium by antiproton impact

We study the ionization of helium (fie) in collision with antiprotons (p) in the energy range from 10 keV to 1000 keV. We adopt a semiclassical single center close coupling approach in which the wave function for the electron is expanded in a B-spline basis centered on the nucleus of the He atom, The calculations are performed using two different models: the independent particle (IP) model and the one-electron (OE) approximation. The interaction between the active electron and the rest of the atom, i.e. passive electron and nucleus, is represented by a model potential. The results obtained are compared with experimental data as well as with existing theoretical calculations. (c) 2005 Published by Elsevier B.V.

Differential cross sections for fragmentation of positronium

Cross sections differential with respect to energy and angle of ejected positrons and electrons for Ps(ls) fragmentation in collision with He, Ne, Ar, Kr and Xe targets are reported. For Ne, Ar, Kr and Xe, only the case where the target is not excited (target elastic collisions) is considered. For He, fragmentation with target excitation/ionization (target inelastic collisions) is also studied. The impulse approximation has been used for target elastic fragmentation, the first Born approximation for target inelastic processes. (c) 2006 Elsevier B.V. All rights reserved.

Thin Ta films: growth, stability, and diffusion studied by molecular-dynamics simulations

We report results of classical molecular-dynamics simulations of bcc and beta-Ta thin films. Thermal PVD film growth, surface roughness, argon ion bombardment, phase stability and transformation, vacancy and adatom diffusion, and thermal relaxation kinetics are discussed. Distinct differences between the two structures are observed, including a complex vacancy diffusion mechanism in beta-Ta. Embedded atom method potentials, which were fitted to bcc properties, have been used to model the Ta-Ta interactions. In order to verify the application of these potentials to the more complex beta-Ta structure, we have also performed density functional theory calculations. Results and implications of these calculations are discussed.

A new device for the study of electron-ion interactions

The conceptual design of a new electron beam ion trap primarily intended for the study of electron-ion interactions is outlined along with some preliminary predictions regarding its capabilities. (C) 2003 Elsevier Science B.V. All rights reserved.