Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology

In mixed signal integrated circuits noise from the digital circuitry can upset the sensitive analogue circuitry. The Faraday cage structure reported here is based on the unique ground plane SOI technology developed some of the authors. The suppression of crosstalk achieved is an order of magnitude greater than that previously published for frequencies up to 10 GHz. The significance of the technology will be even greater as the operating frequency is increased. This collaborative EPSRC project was judge as tending to outstanding.

SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

The performance of silicon bipolar transistors has been significantly improved by the use of ultra narrow base layers of SiGe. To further improve device performance by minimising parasitic resistance and capacitance the authors produced an unique silicon-on-insulator (SOI) substrate incorporating a buried tungsten disilicide layer. This structure forms the basis of a recent submission by Zarlink Semiconductors ( Silvaco, DeMontfort & Queen�s) to DTI for high voltage devices for automotive applications. The Queen�s part of the original EPSRC project was rated as tending to outstanding.

Design and optimization of FinFETs for ultra-low-voltage analog applications

In this paper, we analyze the enormous potential of engineering source/drain extension (SDE) regions in FinFETs for ultra-low-voltage (ULV) analog applications. SDE region design can simultaneously improve two key analog figures of merit (FOM)-intrinsic de gain (A(vo)) and cutoff frequency (f(T)) for 60 and 30 nm FinFETs operated at low drive current (J(ds) = 5 mu A/mu m). The improved Avo and fT are nearly twice compared to those of devices with abrupt SDE regions. The influence of the SDE region profile and its impact on analog FOM is extensively analyzed. Results show that SDE region optimization provides an additional degree of freedom apart from device parameters (fin width and aspect ratio) to design future nanoscale analog devices. The results are analyzed in terms of spacer-to-straggle ratio a new design parameter for SDE engineered devices. This paper provides new opportunities for realizing future ULV/low-power analog design with FinFETs.

Effectiveness of child protection training for pre-service early childhood educators

International evidence confirms that early childhood educators can enter professional practice unprepared for child protection due to inadequate pre-service preparation. This paper makes an original contribution by using the Child Protection Questionnaire for Educators (CPQE) to examine the pre- and post- intervention child maltreatment and protection knowledge of early childhood and primary teaching students. While students’ knowledge increases significantly after participating in a child protection training programme, Pastoral Pathways, as part of their undergraduate study, post-intervention scores vary between groups. The study provides evidence of programme effectiveness and future training needs of pre-service educators. Findings are relevant to teacher educators and child care training providers in relation to programme content development and evidencing knowledge and skills acquisition.

Microwave Irradiation for the Facile Synthesis of Transition-Metal Nanoparticles (NPs) in Ionic Liquids (ILs) from Metal-Carbonyl Precursors and Ru-, Rh-, and Ir-NP/IL Dispersions as Biphasic Liquid-Liquid Hydrogenation Nanocatalysts for Cyclohexene

Stable chromium, molybdenum, tungsten, manganese, rhenium, ruthenium, osmium, cobalt, rhodium, and iridium metal nanoparticles (MNPs) have been reproducibly obtained by facile, rapid (3 min), and energysaving 10 W microwave irradiation (MWI) under an argon atmosphere from their metal–carbonyl precursors [Mx(CO)y] in the ionic liquid (IL) 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIm][BF4]). This MWI synthesis is compared to UV-photolytic (1000 W, 15 min) or conventional thermal decomposition (180–2508C, 6–12 h) of [Mx(CO)y] in ILs. The MWIobtained nanoparticles have a very small (<5 nm) and uniform size and are prepared without any additional stabilizers or capping molecules as long-term stable M-NP/IL dispersions (characterization by transmission electron microscopy (TEM), transmission electron diffraction (TED), and dynamic light scattering (DLS)). The ruthenium, rhodium, or iridium nanoparticle/IL dispersions are highly active
and easily recyclable catalysts for the biphasic liquid–liquid hydrogenation of cyclohexene to cyclohexane with activities of up to 522 (mol product)(mol Ru)1h1 and 884 (mol product)(molRh)1h1 and give almost quantitative conversion within 2 h at 10 bar H2 and 908C. Catalyst poisoning experiments with CS2 (0.05 equiv per Ru) suggest a heterogeneous surface catalysis of RuNPs.

California performance tour

Collaborative group improvisations: Betalevel, Los Angeles; KZSU Day of Noise, Stanford; Thingamajigs performance at the Museum of California, Oakland; CCRMA Concert, Stanford; EarMeal LA Art Stream, Los Angeles; Outsound at the Luggage Store Gallery, San Francisco (with Matt Ingalls, John Ingle, Ted Byrnes, Edward Schocker & others).

Improved Thermal Performance of SOI Using Compound Buried Layer

The buried oxide (BOX) layer in silicon on insulator (SOI) was replaced by a compound buried layer (CBL) containing layers of SiO2, polycrystalline silicon (polysilicon), and SiO2. The undoped polysilicon in the CBL acted as a dielectric with a higher thermal conductivity than SiO2. CBL provides a reduced thermal resistance with the same equivalent oxide thickness as a standard SiO2 buried layer. Thermal resistance was further reduced by lateral heat flow through the polysilicon. Reduction in thermal resistance by up to 68% was observed, dependent on polysilicon thickness. CBL SOI substrates were designed and manufactured to achieve a 40% reduction in thermal resistance compared with an 1.0-μm SiO2 BOX. Power bipolar transistors with an active silicon layer thickness of 13.5 μm manufactured on CBL SOI substrates showed a 5%-17% reduction in thermal resistance compared with the standard SOI. This reduction was dependent on transistor layout geometry. Between 65% and 90% of the heat flow from these power transistors is laterally through the thick active silicon layer. Analysis confirmed that CBL SOI provided a 40% reduction in the vertical path thermal resistance. Devices employing thinner active silicon layers will achieve the greater benefit from reduction in vertical path thermal resistance offered by CBL SOI.

Family-based associations in measures of psychological distress and quality of life in a cardiac screening clinic for inheritable cardiac diseases: a cross-sectional study

BACKGROUND: Family-based cardiac screening programmes for persons at risk for genetic cardiac diseases are now recommended. However, the psychological wellbeing and health related quality of life (QoL) of such screened patients is poorly understood, especially in younger patients. We sought to examine wellbeing and QoL in a representative group of adults aged 16 and over in a dedicated family cardiac screening clinic.

METHODS: Prospective survey of consecutive consenting patients attending a cardiac screening clinic, over a 12 month period. Data were collected using two health measurement tools: the Short Form 12 (version 2) and the Hospital Anxiety and Depression Scale (HADS), along with baseline demographic and screening visit-related data. The HADS and SF-12v.2 outcomes were compared by age group. Associations with a higher HADS score were examined using logistic regression, with multi-level modelling used to account for the family-based structure of the data.

RESULTS: There was a study response rate of 86.6%, with n=334 patients providing valid HADS data (valid response rate 79.5%), and data on n=316 retained for analysis. One-fifth of patients were aged under 25 (n=61). Younger patients were less likely than older to describe significant depression on their HADS scale (p<0.0001), although there were overall no difference between the prevalence of a significant HADS score between the younger and older age groups (18.0% vs 20.0%, p=0.73). Significant positive associates of a higher HADS score were having lower educational attainment, being single or separated, and being closely related to the family proband. Between-family variance in anxiety and depression scores was greater than within-family variance.

CONCLUSIONS: High levels of anxiety were seen amongst patients attending a family-based cardiac screening clinic.Younger patients also had high rates of clinically significant anxiety. Higher levels of anxiety and depression tends to run in families, and this has implications for family screening and intervention programmes.