Modelling and Prediction of NOx Emission in a Coal-Fired Power Generation Plant

In this paper NOx emissions modelling for real-time operation and control of a 200 MWe coal-fired power generation plant is studied. Three model types are compared. For the first model the fundamentals governing the NOx formation mechanisms and a system identification technique are used to develop a grey-box model. Then a linear AutoRegressive model with eXogenous inputs (ARX) model and a non-linear ARX model (NARX) are built. Operation plant data is used for modelling and validation. Model cross-validation tests show that the developed grey-box model is able to consistently produce better overall long-term prediction performance than the other two models.

Analysis and Synthesis of pHEMT Class-E Amplifiers with Shunt Inductor including ON-State Active-Device Resistance Effects

In this theoretical paper, the analysis of the effect that ON-state active-device resistance has on the performance of a Class-E tuned power amplifier using a shunt inductor topology is presented. The work is focused on the relatively unexplored area of design facilitation of Class-E tuned amplifiers where intrinsically low-output-capacitance monolithic microwave integrated circuit switching devices such as pseudomorphic high electron mobility transistors are used. In the paper, the switching voltage and current waveforms in the presence of ON-resistance are analyzed in order to provide insight into circuit properties such as RF output power, drain efficiency, and power-output capability. For a given amplifier specification, a design procedure is illustrated whereby it is possible to compute optimal circuit component values which account for prescribed switch resistance loss. Furthermore, insight into how ON-resistance affects transistor selection in terms of peak switch voltage and current requirements is described. Finally, a design example is given in order to validate the theoretical analysis against numerical simulation.

Performance assessment of nanoscale double- and triple- gate FinFETs

This is the first paper to describe performance assessment of triple and double gate FinFETs for High Performance (HP), Low Operating Power (LOP) and Low Standby Power (LSTP) logic technologies is investigated. The impact of gate work-function, spacer width, lateral source/drain doping gradient, fin aspect ratio, fin thickness on device performance, has been analysed in detail and guidelines are presented to meet ITRS specification at 65 and 45 nm nodes. Optimal design of lateral source/drain doping profile can not only effectively control short channel effects, yielding low off-current, but also achieve low values of intrinsic gate delay.

The effect of water depth on the performance of a small surging wave energy converter

The effect of water depth on the performance of a small surging wave energy converter (WEC) is investigated analytically, numerically and experimentally. It is shown that although the average annual incident wave power is significantly reduced by water depth, a large proportion of this reduction is due to the dissipation of highly energetic, but largely unexploitable seas. It is also shown that the power capture is related more closely to incident wave force than incident wave power. Experimental results demonstrate that both the surge wave force and power capture of a flap-type WEC increase in shallow water.

Feasibility of online collaborative voltage stability control of power systems

This paper presents the results of feasibility study of a novel concept of power system on-line collaborative voltage stability control. The proposal of the on-line collaboration between power system controllers is to enhance their overall performance and efficiency to cope with the increasing operational uncertainty of modern power systems. In the paper, the framework of proposed on-line collaborative voltage stability control is firstly presented, which is based on the deployment of multi-agent systems and real-time communication for on-line collaborative control. Then two of the most important issues in implementing the proposed on-line collaborative voltage stability control are addressed: (1) Error-tolerant communication protocol for fast information exchange among multiple intelligent agents; (2) Deployment of multi-agent systems by using graph theory to implement power system post-emergency control. In the paper, the proposed on-line collaborative voltage stability control is tested in the example 10-machine 39-node New England power system. Results of feasibility study from simulation are given considering the low-probability power system cascading faults.

Improved power-saving medium access protocol for IEEE 802.11e QoS-enabled wireless networks

The performance of a new pointer-based medium-access control protocol that was designed to significantly improve the energy efficiency of user terminals in quality-of-service-enabled wireless local area networks was analysed. The new protocol, pointer-controlled slot allocation and resynchronisation protocol (PCSARe), is based on the hybrid coordination function-controlled channel access mode of the IEEE 802.11e standard. PCSARe reduces energy consumption by removing the need for power-saving stations to remain awake for channel listening. Discrete event network simulations were performed to compare the performance of PCSARe with the non-automatic power save delivery (APSD) and scheduled-APSD power-saving modes of IEEE 802.11e. The simulation results show a demonstrable improvement in energy efficiency without significant reduction in performance when using PCSARe. For a wireless network consisting of an access point and eight stations in power-saving mode, the energy saving was up to 39% when using PCSARe instead of IEEE 802.11e non-APSD. The results also show that PCSARe offers significantly reduced uplink access delay over IEEE 802.11e non-APSD, while modestly improving the uplink throughput. Furthermore, although both had the same energy consumption, PCSARe gave a 25% reduction in downlink access delay compared with IEEE 802.11e S-APSD.

Universal power quality manager with a new control scheme

A new universal power quality manager is proposed. The proposal treats a number of power quality problems simultaneously. The universal manager comprises a combined series and shunt three-phase PWM controlled converters sharing a common DC link. A control scheme based on fuzzy logic is introduced and the general features of the design and operation processes are outlined. The performance of two configurations of the proposed power quality manager are compared in terms of a recently formulated unified power quality index. The validity and integrity of the proposed system is proved through computer simulated experiments

Sensitivity characteristics of inverse Class-E power amplifier

In this paper, an analysis is performed in order to determine the effects that variations in circuit component values, frequency, and duty cycle have on the performance of the newly introduced inverse Class-E amplifier. Analysis of the inverse Class-E amplifier under the generalized condition of arbitrary duty cycle is performed and it is shown that the inverse Class-E amplifier is reasonably tolerant to circuit parameter variations. When compared to the conventional Class-E amplifier the inverse Class-E amplifier offers the potential for high efficiency at increased output power as well as higher peak output power levels than are available with a conventional Class-E amplifier. Further the inverse Class-E amplifier provides more flexibility for deployment with a pulsewidth modulator as the means of producing full-carrier amplitude modulation (AM) due to its ability to operate to high AM modulation indices.

Performance projections and design optimization of planar double gate SOI MOSFETs for logic technology applications

In this paper, by investigating the influence of source/drain extension region engineering (also known as gate-source/drain underlap) in nanoscale planar double gate (DG) SOI MOSFETs, we offer new insights into the design of future nanoscale gate-underlap DG devices to achieve ITRS projections for high performance (HP), low standby power (LSTP) and low operating power (LOP) logic technologies. The impact of high-kappa gate dielectric, silicon film thickness, together with parameters associated with the lateral source/drain doping profile, is investigated in detail. The results show that spacer width along with lateral straggle can not only effectively control short-channel effects, thus presenting low off-current in a gate underlap device, but can also be optimized to achieve lower intrinsic delay and higher on-off current ratio (I-on/I-off). Based on the investigation of on-current (I-on), off-current (I-off), I-on/I-off, intrinsic delay (tau), energy delay product and static power dissipation, we present design guidelines to select key device parameters to achieve ITRS projections. Using nominal gate lengths for different technologies, as recommended from ITRS specification, optimally designed gate-underlap DG MOSFETs with a spacer-to-straggle (s/sigma) ratio of 2.3 for HP/LOP and 3.2 for LSTP logic technologies will meet ITRS projection. However, a relatively narrow range of lateral straggle lying between 7 to 8 nm is recommended. A sensitivity analysis of intrinsic delay, on-current and off-current to important parameters allows a comparative analysis of the various design options and shows that gate workfunction appears to be the most crucial parameter in the design of DG devices for all three technologies. The impact of back gate misalignment on I-on, I-off and tau is also investigated for optimized underlap devices.

Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers

A comparison of dc characteristics of fully depleted double-gate (DG) MOSFETs with respect to low-power circuit applications and device scaling has been performed by two-dimensional device simulation. Three different DG MOSFET structures including a conventional N+ polysilicon gate device with highly doped Si layer, an asymmetrical P+/N+ polysilicon gate device with low doped Si layer and a midgap metal gate device with low doped Si layer have been analysed. It was found that DG MOSFET with mid-gap metal, gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness). It is also found that an asymmetrical P+/N+ polysilicon gate DG MOSFET design offers comparable dc characteristics, but better parameter immunity to technology tolerances than a conventional DG MOSFET. (C) 2004 Elsevier Ltd. All rights reserved.

The design and performance of a 2.5-GHz telecommand link for wireless biomedical monitoring

This paper details the implementation and operational performance of a minimum-power 2.45-GHz pulse receiver and a companion on-off keyed transmitter for use in a semi-active duplex RF biomedical transponder. A 50-Ohm microstrip stub-matched zero-bias diode detector forms the heart of a body-worn receiver that has a CMOS baseband amplifier consuming 20 microamps from +3 V and achieves a tangential sensitivity of -53 dBm. The base transmitter generates 0.5 W of peak RF output power into 50 Ohms. Both linear and right-hand circularly polarized Tx-Rx antenna sets were employed in system reliability trials carried out in a hospital Coronary Care Unit, For transmitting antenna heights between 0.3 and 2.2 m above floor level, transponder interrogations were 95% reliable within the 67-m-sq area of the ward, falling to an average of 46 % in the surrounding rooms and corridors. Overall, the circular antenna set gave the higher reliability and lower propagation power decay index.

Power combining techniques into unbalanced loads for Class-E and inverse Class-E amplifiers

A power combining strategy for Class-E and inverse Class-E amplifiers operating at high frequencies such that they can operate into unbalanced loads is proposed. This power combining method is particularly important for the inverse Class-E amplifier configuration whose single-stage topology is naturally limited for small-to-medium power applications. Design examples for the power combining synthesis of classical Class-E and then inverse Class-E amplifiers with specification 3 V-1.5 W-2.5 GHz are given. For this specification, it is shown that a three-branch combiner has a natural 50 V output impedance. The resulting circuits are simulated within Agilent Advanced Design Systems environment with good agreement to theoretical prediction. Further the performance of the proposed circuits when operated in a Linear amplification using Nonlinear Components transmitter configuration whereby two-branch amplifiers are driven with constant amplitude conjugate input phase signals is investigated.