22 resultados para tin-oxide film


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A UVB specific dosimeter is described comprising: a redox dye (2,6-dichloroindophenol, DCIP), a semiconductor ( tin(IV) oxide, SnO2) and a sacrificial electron donor ( glycerol) dispersed in a polymer ( hydroxy ethyl cellulose, HEC) film. The dosimeter is blue in the absence of UVB light but rapidly loses colour on exposure to UVB light. The spectral characteristics of a typical UVB dosimeter film and the mechanism by which the colour change occurs are detailed. DCIP UVB dosimeter films exhibit a response that is related to the irradiance level and duration of UVB exposure, the level of SnO2 present and to a lesser extent the level of glycerol present. The response of the dosimeter appears to be independent of dye concentration and film thickness. Furthermore, DCIP UVB dosimeter films respond to solar simulated light, exhibiting a colour loss that can be simply related to the Minimal Erythemal Dose (MED) exposure for skin type II. As a consequence, such indicators have potential for measuring solar radiation exposure and providing an early warning of erythema for most Caucasian skin (i.e. skin type II).

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This paper investigates the mechanism of nanoscale fatigue of functionally graded TiN/TiNi films using nano-impact and multiple-loading-cycle nanoindentation tests. The functionally graded films were deposited on silicon substrate, in which TiNi films maintain shape memory and pseudo elastic behavior, while a modified TiN surface layer provides tribological and anti-corrosion properties. Nanomechanical tests were performed to comprehend the localized film performance and failure modes of the functionally graded film using NanoTestTM equipped with Berkovich and conical indenter between 100 μN to 500 mN loads. The loading mechanism and load history are critical to define film failure modes (i.e. backward depth deviation) including the shape memory effect of the functionally graded layer. The results are sensitive to the applied load, loading type (e.g. semi-static, dynamic) and probe geometry. Based on indentation force-depth profiles, depth-time data and post-test surface observations of films, it is concluded that the shape of the nanoindenter is critical in inducing the localized indentation stress and film failure, including shape recovery at the lower load range. Elastic-plastic finite element (FE) simulation during nanoindentation loading indicated that the location of subsurface maximum stress near the interface influences the backward depth deviation type of film failure. A standalone, molecular dynamics simulation was performed with the help of a long range potential energy function to simulate the tensile test of TiN nanowire with two different aspect ratios to investigate the theory of its failure mechanism.

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Perovskite phase instability of BiMnO3 has been exploited to synthesize epitaxial metal oxide magnetic nanocrystals. Thin film processing conditions are tuned to promote the breakdown of the perovskite precursor into Bi2O3 matrix and magnetic manganese oxide islands. Subsequent cooling in vacuum ensures complete volatization of the Bi2O3, thus leaving behind an array of self-assembled magnetic Mn3O4 nanostructures. Both shape and size can be systematically controlled by the ambient oxygen environments and deposition time.As such, this approach can be extended to any other Bi-based complex ternary oxide system as it primarily hinges on the breakdown of parent Bi-based precursor and subsequent Bi2O3 volatization.

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The optical plume emissions produced on excimer laser ablation of a YBa2Cu3O7 target are reported and identified with the various atomic, ionic, and molecular species present. The spatial and temporal distribution of these emissions were studied as a function of the laser fluence and oxygen pressure. At the laser fluences used (4-6 J/cm(2)) some target material is ablated or evaporated directly in molecular form. In addition efficient formation of molecular oxides is observed at the contact front of the expanding plume with the surrounding oxygen atmosphere. The intensity and spatial distribution of oxide emission in the visible plume therefore provides a sensitive diagnostic for optimization of substrate location and deposition conditions.

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With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM.

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Using the Otto (prism-air gap-sample) configuration p-polarized light of wavelength 632.8 nm has been coupled with greater than 80% efficiency to surface plasmons on the aluminium electrode of silicon-silicon dioxide-aluminium structures. The results show that if the average power per unit area dissipated on the metal film exceeds approximately 1 mW mm-2, then the coupling gap and thus the characteristics of the surface plasmon resonance are noticeably altered. In modelling the optical response of such systems the inclusion of both a non-uniform air coupling gap and a thin cermet layer at the aluminium surface may be necessary.

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Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.