Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
| Data(s) |
01/12/2013
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| Resumo |
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM. |
| Identificador | |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Muller , J , Boscke , T S , Muller , S , Yurchuk , E , Polakowski , P , Paul , J , Martin , D , Schenk , T , Khullar , K , Kersch , A , Weinreich , W , Riedel , S , Seidel , K , Kumar , A , Arruda , T M , Kalinin , S V , Schlosser , T , Boschke , R , van Bentum , R , Schroder , U & Mikolajick , T 2013 , Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories . in Electron Devices Meeting (IEDM), 2013 IEEE International . pp. 10.8.1-10.8.4 . DOI: 10.1109/IEDM.2013.6724605 |
| Palavras-Chave | #CMOS digital integrated circuits #ferroelectric storage #field effect transistors #hafnium compounds #random-access storage #CMOS-environment #HfO2 #MFIS-FET #MFM capacitors #NVM properties #ferroelectric memories #perovskite based FRAM #thin films #Capacitors #Ferroelectric films #Hafnium compounds #Logic gates #Nonvolatile memory #Random access memory #Tin |
| Tipo |
contributionToPeriodical |
