CHARACTERIZATION OF SURFACE-PLASMONS ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES

<p>Using the Otto (prism-air gap-sample) configuration p-polarized light of wavelength 632.8 nm has been coupled with greater than 80% efficiency to surface plasmons on the aluminium electrode of silicon-silicon dioxide-aluminium structures. The results show that if the average power per unit area dissipated on the metal film exceeds approximately 1 mW mm-2, then the coupling gap and thus the characteristics of the surface plasmon resonance are noticeably altered. In modelling the optical response of such systems the inclusion of both a non-uniform air coupling gap and a thin cermet layer at the aluminium surface may be necessary.</p>