56 resultados para Amorphous Semiconductors


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The preparation of porous films directly deposited onto the surface of catalyst particles is attracting increasing attention. We report here for the first time a method that can be carried out at ambient pressure for the preparation of porous films deposited over 3 mm diameter catalyst particles of silica-supported Pt-Fe. Characterization of the sample prepared at ambient pressure (i.e., open air, OA) and its main structural differences as compared with a Na-A (LTA) coated catalyst made using an autoclave-based method are presented. The OA-coated material predominantly exhibited an amorphous film over the catalyst surface with between 4 and 13% of crystallinity as compared with fully crystallized LTA zeolite crystals. This coated sample was highly selective for CO oxidation in the presence of butane with no butane oxidation observed up to 350 degrees C. This indicates, for the first time, that the presence of a crystalline membrane is not necessary for the difference in light off temperature between CO and butane to be achieved and that amorphous films may also produce this effect. An examination of the space velocity dependence and adsorption of Na+ on the catalysts indicates that the variation in CO and butane oxidation activity is not caused by site blocking predominantly, although the Pt activity was lowered by contact with this alkali.

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Topographic and optical contrasts formed by Ga+ ion irradiation of thin films of amorphous silicon carbide have been investigated with scanning near-field optical microscopy. The influence of ion-irradiation dose has been studied in a pattern of sub-micrometre stripes. While the film thickness decreases monotonically with ion dose, the optical contrast rapidly increases to a maximum value and then decreases gradually. The results are discussed in terms of the competition between the effects of ion implantation and surface milling by the ion beam. The observed effects are important for uses of amorphous silicon carbide thin films as permanent archives in optical data storage applications.

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A force field model of the Keating type supplemented by rules to break, form, and interchange bonds is applied to investigate thermodynamic and structural properties of the amorphous SiO2 surface. A simulated quench from the liquid phase has been carried out for a silica sample made of 3888 silicon and 7776 oxygen atoms arranged on a slab similar to 40 angstrom thick, periodically repeated along two directions. The quench results into an amorphous sample, exposing two parallel square surfaces of similar to 42 nm(2) area each. Thermal averages computed during the quench allow us to determine the surface thermodynamic properties as a function of temperature. The surface tension turns out to be gamma=310 +/- 20 erg/cm(2) at room temperature and gamma=270 +/- 30 at T=2000 K, in fair agreement with available experimental estimates. The entropy contribution Ts-s to the surface tension is relatively low at all temperatures, representing at most similar to 20% of the surface energy. Almost without exceptions, Si atoms are fourfold coordinated and oxygen atoms are twofold coordinated. Twofold and threefold rings appear only at low concentration and are preferentially found in proximity of the surface. Above the glass temperature T-g=1660 +/- 50 K, the mobility of surface atoms is, as expected, slightly higher than that of bulk atoms. The computation of the height-height correlation function shows that the silica surface is rough in the equilibrium and undercooled liquid phase, becoming smooth below the glass temperature T-g.

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Surface characterization of amorphous silica-alumina (ASA) by COads IR, pyridine(ads) IR, alkylamine temperature-programmed desorption (TPD), Cs+ and Cu(EDA)(2)(2+) exchange, H-1 NMR, and m-xylene isomerization points to the presence of a broad range of Bronsted and Lewis acid sites. Careful interpretation of IR spectra of adsorbed CO or pyridine confirms the presence of a few very strong Bronsted acid sites (BAS), typically at concentrations lower than 10 mu mol/g. The general procedure for alkylamine TPD, which probes both Bronsted and Lewis acidity, is modified to increase the selectivity to strong Bronsted acid sites. Poisoning of the m-xylene isomerization reaction by a base is presented as a novel method to quantify strong BAS. The surface also contains a weaker form of BAS, in concentrations between 50 and 150 mu mol/g, which can be quantified by COads IR Cu(EDA)(2)(2+) exchange also probes these sites. The structure of these sites remains unclear, but they might arise from the interaction of silanol groups with strong Lewis acid Al3+ sites. The surface also contains nonacidic aluminol and silanol sites (200-400 mu mol/g) and two forms of Lewis acid sites: (i) a weaker form associated with segregated alumina domains containing five-coordinated Al, which make up the interface between these domains and the ASA phase and (ii) a stronger form, which are undercoordinated Al sites grafted onto the silica surface. The acid catalytic activity in bifunctional n-heptane hydroconversion correlates with the concentration of strong BAS. The influence of the support electronegativity on the neopentane hydrogenolysis activity of supported Pt catalysts is considerably larger than that of the support Bronsted acidity. It is argued that strong Lewis acid sites, which are present in ASA but not in gamma-alumina, are essential to transmit the Sanderson electronegativity of the oxide support to the active Pt phase.