New Retrodirective Antenna Techniques for Mobile Terminal Applications

This paper presents a new architecture together with practical results for a high performance analogue retrodirective array architecture with the following significant advantages: (1) It is able to constructively combine signals on receive, as well as on transmit, a feature not seen before on this type of array, (2) It is capable of operating with real life communication received signal levels as low as -120dBm. This work opens the way for fully co-operating Retrodirective arrays for use on un-stabilized co-operating mobile platforms where maximum S/N simultaneously on receive and on retransmit is automatically guaranteed.

Automaticity, spelling, and second language learning

This study investigated the relationship between a chronometric estimate of automaticity for the spelling of French words (Automaticity) and performance on four tests of French language attainment among a sample of Year 11 students of French as a foreign language. Fifty participants each completed a computerized test of French spelling and attainment tests in four aspects of French language learning: reading comprehension, writing fluency, oral fluency, and aural comprehension. Correlations were significant between Automaticity and performance on all four tests of French language attainment as well as on overall attainment.

Germanium bonding to AI2O3

Germanium has been bonded to both single crystal Al2O 3 (sapphire) as well as fine grain Al2O3. A germanium to sapphire bonding energy of 3 J/m2 has been measured after a 200 °C bond anneal. Micro voids formed between the germanium/sapphire interface can be removed by employing an interfacial layer of silicon dioxide on either surface. Patterning the sapphire into a grid pattern prior to bonding creates an escape path for trapped gas or moisture allowing micro void free direct bonding to be achieved. Modifying the surface of the fine grain Al2O3 surface with a polycrystalline silicon deposition and polish creates a surface, having an rms roughness (measured over a 250© m2 area), of 1.5nm, suitable for bonding. Techniques employed in the germanium sapphire bonding can then be used in the bonding of fine grain A12O3 to germanium. © The Electrochemical Society.

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.