Characterizing wear processes on orthopaedic materials using scanning probe microscopy

The operational lifetime of hip replacement prostheses can be severely limited due to the occurrence of excessive wear at the load-bearing interfaces. The aim of this study was to investigate how the surface topography of articulating counterfaces evolves over the duration of a laboratory wear run. It was observed that modular stainless steel femoral heads wearing against ultrahigh molecular weight polyethylene (UHMWPE) can themselves be subject to wearing. A comparison with retrieved in vivo-aged femoral heads shows many topographical similarities: in a qualitative sense, scratching and pitting are evident on laboratory and in vivo-worn femoral heads; quantitatively, roughness comparisons between the new and worn devices are seen to increase typically by a factor of 4 after laboratory wearing. The observations suggest that a particular wear mode, namely third-body wear, is responsible for the increased roughness. It is conjectured that third bodies might arise through surface fatigue wear on the metal counterface, Wear debris is also observed to have been generated from the polymer surface, creating rounded debris with sizes predominantly in the range 0.4-0.8 microns: dimensions that are comparable to values previously reported for in vivo generated debris.

Temperature dependence of the mid-infrared dielectric function of YBCO in the ab plane

We have excited mid-infrared surface plasmons in two YBCO thin films of contrasting properties using attenuated total reflection of light and found that the imaginary part of the dielectric function decreases linearly with reduction in temperature. This result is in contrast with the commonly reported conclusion of infrared normal reflectance studies. If sustained it may clarify the problem of understanding the normal state properties of YBCO and the other cuprates. The dielectric function of the films, epsilon = epsilon(1) + i epsilon(2), was determined between room temperature and 80K: epsilon(1) was found to be only slightly temperature dependent but somewhat sample dependent, probably as a result of surface and grain boundary contamination. The imaginary part, epsilon(2), (and the real part of the conductivity, sigma(1),) decreased linearly with reduction in temperature in both films. Results obtained were: for film 1: epsilon(1) = - 14.05 - 0.0024T and epsilon(2) - 4.11 + 0.086T and for film 2: epsilon(1) = - 24.09 + 0.0013T and epsilon(2) = 7.66 + 0.067T where T is the temperature in Kelvin. An understanding of the results is offered in terms of temperature-dependent intrinsic intragrain inelastic scattering and temperature-independent contributions: elastic and inelastic grain boundary scattering and optical interband (or localised charge) absorption. The relative contribution of each is estimated. A key conclusion is that the interband (or localised charge) absorption is only similar to 10%. Most importantly, the intrinsic scattering rate, 1/tau, decreases linearly with fall in temperature, T, in a regime where current theory predicts dependence on frequency, omega, to dominate. The coupling constant, lambda, between the charge carriers and the thermal excitations has a value of 1.7, some fivefold greater than the far infrared value. These results imply a need to restate the phenomenology of the normal state of high temperature superconductors and seek a corresponding theoretical understanding.

Barrier characteristics of PtSi/p-Si schottky diodes as determined from I-V-T measurements

The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T-0 parameter with T-0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, phi(b)(-0) = 223 mV, with an (assumed) Gaussian distribution of standard deviation sigma(phi) = 12.5 mV. These data are correlated with the zero-bias barrier height, phi(j)(0) = 192 mV (at T = 90 K), the photoresponse barrier height, phi(ph) = 205 mV, and the flatband barrier height, phi(fb) = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dE(g)(i)/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

DC resistance and dielectric function at 3392 nm of YBCO films from 300 K to 80 K

The dielectric function of a YBCO film was determined at 3392nm at temperatures down to 80K. Results obtained were epsilon(i) = -24.09 - 0.0013T and epsilon(i) = 7.66 + 0.067T. The results for epsilon(i) are compared with the de resistance of the film. Intrinsic intragrain scattering, elastic and inelastic grain boundary scattering and optical interband absorption are estimated as 82%, 5%, 13% and 10% respecively at 0K.

OPTIMIZATION OF THE SLOW-MODE PLASMON POLARITON IN LIGHT-EMITTING TUNNEL-JUNCTIONS

Light emitted from metal/oxide/metal tunnel junctions can originate from the slow-mode surface plasmon polariton supported in the oxide interface region. The effective radiative decay of this mode is constrained by competition with heavy intrinsic damping and by the need to scatter from very small scale surface roughness; the latter requirement arises from the mode's low phase velocity and the usual momentum conservation condition in the scattering process. Computational analysis of conventional devices shows that the desirable goals of decreased intrinsic damping and increased phase velocity are influenced, in order of priority, by the thickness and dielectric function of the oxide layer, the type of metal chosen for each conducting electrode, and temperature. Realizable devices supporting an optimized slow-mode plasmon polariton are suggested. Essentially these consist of thin metal electrodes separated by a dielectric layer which acts as a very thin (a few nm) electron tunneling barrier but a relatively thick (several 10's of nm) optically lossless region. (C) 1995 American Institute of Physics.

IMAGING OF SURFACE-PLASMON LAUNCH AND PROPAGATION USING A PHOTON SCANNING TUNNELING MICROSCOPE

The spectroscopic capability of the photon scanning tunneling microscope is exploited to study directly the launch and propagation of surface plasmons on thin silver films. Two input beams, of different wavelength, are incident through the prism in a prism-Ag film-air-fibre tip system. Both excite surface plasmons at the Ag-air interface and light of both wavelengths is coupled into the fibre probe via the respective surface plasmon evanescent fields. One laser beam is used for instrument control. The second, or probe beam is tightly focused on the sample, within the area of the unfocused or control beam, giving a well-defined and symmetrical, confined surface plasmon launch site. However, the image at the probe wavelength is highly asymmetrical in section with an exponential tail extending beyond one side of the launch site. This demonstrates in a very direct fashion;the propagation of surface plasmons; a propagation length of similar to 11.7 mu m is measured at a probe wavelength of 543.5 nm. On rough Ag films the excitation of localised scattering centres is also observed in addition to the launch of delocalised surface plasmons.

BROAD-BAND EXCITATION AND EMISSION OF SURFACE-PLASMONS

The well known advantages of using surface plasmons, in particular the high sensitivity to surface adsorbates, are nearly always compromised in practice by the use of monochromatic excitation and the consequent lack of proper spectroscopic information. This limitation arises from the angle/wavelength selective nature of the surface plasmon resonance. The work described here uses an elegant broadband excitation/decay scheme in a substrate(silica)-grating profiled photoresist-Ag film geometry. Laser radiation of wavelength 488 nm, incident through the silica substrate, excites by near-field coupling a broad band of surface plasmons at the photoresist-Ag interface within the spectral range of the photoresist fluorescence. With a judicious choice of grating period this mode can cross-couple to the mode supported at the Ag-air interface. This latter mode can, in turn, couple out to light by virtue of the same grating profile. The spectral distribution of the light emitted due to this three-step process has been studied as a function of the angle of emission and depth of the grating profiled surface for each polarization. It is found that the optimum emission efficiency occurs with a groove depth in the region of 65 nm. This is considerably greater than the optimum depth of 40 nm required for surface plasmon-photon coupling at a Ag-air interface or, in other words, for the last step of the process in isolation.

SURFACE-PLASMON ENHANCED LASER-ABLATION OF THIN METAL-FILMS

Surface plasmon enhancement of laser ablation of thin Al films is examined with a view to its application in metal film patterning and nano-structuring. Al films, deposited on silica prisms, are first characterized by attenuated total reflection using a broadband UV source and appropriate interference filter. The films are subsequently subjected to excimer laser radiation of wavelength 248 nm under conditions both of direct incidence from the air side of the film, and of surface plasmon excitation in which light is incident through the prism at greater than critical angle. For a given level of ablation damage in a particular film the fluence required using the surface plasmon technique is 3-5 times less than that needed when direct incidence is used. This is roughly in line with the energy absorbed in the film. From a practical standpoint it is clear that ablation of metal films can be achieved with much lower fluences than has hitherto been possible, thus reducing the requirements on laser output and relaxing the power handling constraints on any input optical elements.

PHOTOSIGNAL ENHANCEMENT IN AL-GAAS DIODES DUE TO SURFACE-PLASMONS AND GUIDED-WAVE MODES

Light of wavelength 632.8 nm and p-polarization is incident on a prism-air gap (varied from 0.7 to 7 mum)-Al-GaAs arrangement. Both the photosignal generated by the Schottky diode and the reflectance are measured as a function of the internal angle of incidence in the prism. There is significant, well-defined enhancement of the photosignal, up to a factor of approximately 7.5, associated with two different types of enhanced absorption modes. For air gaps <1.5 mum there is photosignal enhancement due to an enhanced absorption feature (reflectance dip) that occurs at an angle of incidence just above critical angle in the prism; this feature corresponds to the excitation of a surface plasmon polariton at the Al-air interface. For air gaps > 1 mum there are between one and ten photoresponse peaks at input angles less than the critical angle. The corresponding enhanced absorption features are due to leaky guided wave modes set up in the air gap.

ANALYSIS OF SURFACE-PLASMON POLARITON ENHANCEMENT IN PHOTODETECTION BY AL-GAAS SCHOTTKY DIODES

The surface plasmon polariton mediated photoresponse from Al-GaAs diodes is examined in a prism-air gap-diode configuration as a function of both the wavelength of the incident light and thickness of the Al electrode. The experimental data shows a pronounced dip in reflectance as a function of internal angle of incidence in the prism, due to the excitation of the surface plasmon polariton at the Al-air interface, and a corresponding peak in device photosignal. Careful modelling of reflectance and quantum efficiency data shows that the bulk of the signal is generated by light which is re-radiated from this surface mode into the semiconductor substrate where it is absorbed by the creation of electron-hole pairs in the depletion region. This holds for all the wavelengths used here (all are shorter than the GaAs absorption edge) and across the thickness range of the Al electrodes (20-50 nm). Quantum efficiencies in the range 0.5-22% and enhancement factors of typically 7.5 were recorded in this investigation.

INTERPLAY OF CAF2 SUBSTRATE ROUGHENING AND FILM DEPOSITION RATE ON RADIATIVE SCATTERING OF SURFACE-PLASMON POLARITONS FROM AG FILMS

The radiative decay of surface plasmon polaritons has been investigated in an attempt to characterize the surface roughness of Ag films prepared under different conditions. The polaritons were excited by the method of attenuated total reflection of light. The films were deposited on the face of a 60-degrees BK-7 glass prism at a rate that was deliberately fixed in two different ranges (centred on 0.1 and 10 nm s-1) and in some cases a CaF2 underlayer was used to roughen the film surfaces. The intensity of the scattered light emitted from the opposite face of the films was measured as a function of direction for each using the same sensitivity scale and was correlated with the preparation of the film. It was found that on nominally smooth substrates fast-deposited thinner films give out more light and are deduced to have greater short wavelength (300-600 nm) roughness amplitude. There is also evidence for long wavelenth (7 mum) periodic roughness due to the prism substrate itself. On CaF2 roughened surfaces the light output from the films is further increased and the peak intensity is backward directed with respect to the exciting laser beam direction. Here roughness on a lateral scale of 350 nm is responsible. Also, elastic scattering of surface plasmon polaritons at grain boundaries reduces the light output from fast deposited, small grain, films on CaF2 roughened surfaces. Overall, a consistent picture of roughness induced radiative polariton decay emerges for all cases studied.

DEPENDENCE OF LIGHT OUTPUT FROM NOMINALLY SMOOTH AL-OX-AU TUNNEL-JUNCTIONS ON ELECTRODE MORPHOLOGY

The light output from nominally smooth Al-Ox-Au tunnel junctions is observed to be substantially independent of the deposition rate of the Au film electrode. Films deposited quickly (2 nm s-1) and those deposited slowly (0.16 nm s-1) have similar spectral dependences and intensities. (This is in contrast to roughened films where those deposited quickly give out less light, especially towards the blue end of the spectrum.) The behaviour can be interpreted in terms of the ratio l(ph)/l(em) where l(ph) and l(em) are the mean free paths of surface plasmons between external photon emissions and internal electromagnetic absorptions respectively. Once l(ph)/l(em) exceeds 100, as it does on smooth films, grain size has little further effect on the spectral shape of the light output. In fast-deposited films there are two compensating effects on the output intensity: grain boundary scattering decreases it and greater surface roughness increases it.

CALCULATION OF SLOW MODE SURFACE-PLASMON POLARITON PROPERTIES RELATED TO EXPERIMENTAL-OBSERVATIONS

Recent experimental results definitively showed, for the first time, optical radiation mediated by the slow mode surface plasmon polariton of metal-oxide-metal tunnel junctions. Here, dispersion curves for this mode are calculated. They are consistent with first-order grating coupling to light at the energies of the experimental emission peaks. The curves are then used to analyze second-order and high-energy (> 2.35 eV) grating coupling of the polaritons to radiation. Finally, variation of slow mode damping as a function of energy is used to explain qualitatively the relative experimental peak emission intensities and the absence of radiation peaks above 2.35 eV.