13 resultados para Tunneling (Physics)

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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In this work, we propose the nonlocal tunneling mechanism for high-fidelity state transfer between distant parties. The nonlocal tunneling follows from the overlap between the distant sending and receiving wave functions, which is indirectlymediated by the off-resonant normal modes of a quantum channel. This channel is made up of a network of dissipative quantum systems exhibiting the same bosonic or fermionic statistical nature as the sender and receiver. We demonstrate that the incoherence arising from quantum channel nonidealities is almost completely circumvented by the tunneling mechanism, which thus affords a high-fidelity transfer process.

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We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculations focus on the current-current correlation function for the flux of electrons injected into the quantum dot. The linear response theory used allows us to obtain the noise power in the regime of thermal crossover as a function of parameters that reveal the spin polarization at the reservoirs. The calculation is performed employing diagrammatic integration within the universal groups (ensembles of Dyson) for a nonideal, nonequilibrium chaotic quantum dot. We show that changes in the spin distribution determine significant alterations in noise behavior at values of the tunneling rates close to zero, in the regime of strong reflection at the gates.

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Excitonic dynamics in a hybrid dot-well system composed of InAs quantum dots (QDs) and an InGaAs quantum well (QW) is studied by means of femtosecond pump-probe reflection and continuous wave (cw) photoluminescence (PL) spectroscopy. The system is engineered to bring the QW ground exciton state into resonance with the third QD excited state. The resonant tunneling rate is varied by changing the effective barrier thickness between the QD and QW layers. This strongly affects the exciton dynamics in these hybrid structures as compared to isolated QW or QD systems. Optically measured decay times of the coupled system demonstrate dramatically different response to temperature change depending on the strength of the resonant tunneling or coupling strength. This reflects a competition between purely quantum mechanical and thermodynamical processes.

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The respiration of metal oxides by the bacterium Geobacter sulfurreducens requires the assembly of a small peptide (the GS pilin) into conductive filaments termed pili. We gained insights into the contribution of the GS pilin to the pilus conductivity by developing a homology model and performing molecular dynamics simulations of the pilin peptide in vacuo and in solution. The results were consistent with a predominantly helical peptide containing the conserved a-helix region required for pilin assembly but carrying a short carboxy-terminal random-coiled segment rather than the large globular head of other bacterial pilins. The electronic structure of the pain was also explored from first principles and revealed a biphasic charge distribution along the pilin and a low electronic HOMO-LUMO gap, even in a wet environment. The low electronic band gap was the result of strong electrostatic fields generated by the alignment of the peptide bond dipoles in the pilin's alpha-helix and by charges from ions in solution and amino acids in the protein. The electronic structure also revealed some level of orbital delocalization in regions of the pilin containing aromatic amino acids and in spatial regions of high resonance where the HOMO and LUMO states are, which could provide an optimal environment for the hopping of electrons under thermal fluctuations. Hence, the structural and electronic features of the pilin revealed in these studies support the notion of a pilin peptide environment optimized for electron conduction.

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By performing density functional theory calculations we show that it is possible to make the electronic bandgap in bilayer graphene supported on hexagonal boron nitride (h-BN) substrates tunable. We also show that, under applied electric fields, it is possible to insert states from h-BN into the bandgap, which generate a conduction channel through the substrate making the system metallic. In addition, we verify that the breakdown voltage strongly depends on the number of h-BN layers. We also show that both the breakdown voltage and the bandgap tuning are independent of the h-BN stacking order.

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The intention of this paper is to present some Aristotelian arguments regarding the motion on local terrestrial region. Because it is a highly sophisticated and complex explanation dealt with, briefly, the principles and causes that based theoretic sciences in general and in particular physics. Subdivided into eight topics this article in order to facilitate the understanding of these concepts for the reader not familiar with the Aristotelian texts. With intent to avoid an innocent view, anachronistic and linear the citations are of primary sources or commentators of Aristotle's works.

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We study a strongly interacting "quantum dot 1" and a weakly interacting "dot 2" connected in parallel to metallic leads. Gate voltages can drive the system between Kondo-quenched and non-Kondo free-moment phases separated by Kosterlitz-Thouless quantum phase transitions. Away from the immediate vicinity of the quantum phase transitions, the physical properties retain signatures of first-order transitions found previously to arise when dot 2 is strictly noninteracting. As interactions in dot 2 become stronger relative to the dot-lead coupling, the free moment in the non-Kondo phase evolves smoothly from an isolated spin-one-half in dot 1 to a many-body doublet arising from the incomplete Kondo compensation by the leads of a combined dot spin-one. These limits, which feature very different spin correlations between dot and lead electrons, can be distinguished by weak-bias conductance measurements performed at finite temperatures.

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Many findings from research as well as reports from teachers describe students' problem solving strategies as manipulation of formulas by rote. The resulting dissatisfaction with quantitative physical textbook problems seems to influence the attitude towards the role of mathematics in physics education in general. Mathematics is often seen as a tool for calculation which hinders a conceptual understanding of physical principles. However, the role of mathematics cannot be reduced to this technical aspect. Hence, instead of putting mathematics away we delve into the nature of physical science to reveal the strong conceptual relationship between mathematics and physics. Moreover, we suggest that, for both prospective teaching and further research, a focus on deeply exploring such interdependency can significantly improve the understanding of physics. To provide a suitable basis, we develop a new model which can be used for analysing different levels of mathematical reasoning within physics. It is also a guideline for shifting the attention from technical to structural mathematical skills while teaching physics. We demonstrate its applicability for analysing physical-mathematical reasoning processes with an example.

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We analytically study the input-output properties of a neuron whose active dendritic tree, modeled as a Cayley tree of excitable elements, is subjected to Poisson stimulus. Both single-site and two-site mean-field approximations incorrectly predict a nonequilibrium phase transition which is not allowed in the model. We propose an excitable-wave mean-field approximation which shows good agreement with previously published simulation results [Gollo et al., PLoS Comput. Biol. 5, e1000402 (2009)] and accounts for finite-size effects. We also discuss the relevance of our results to experiments in neuroscience, emphasizing the role of active dendrites in the enhancement of dynamic range and in gain control modulation.

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We analyse the interplay between the Higgs to diphoton rate and electroweak precision measurements constraints in extensions of the Standard Model with new uncolored charged fermions that do not mix with the ordinary ones. We also compute the pair production cross sections for the lightest fermion and compare them with current bounds.

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In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications. (C) 2012 Elsevier Ltd. All rights reserved.

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The optoelectronic properties of InAs/GaAs quantum dots can be tuned by rapid thermal annealing. In this study, the morphology change of InAs/GaAs quantum dots layers induced by rapid thermal annealing was investigated at the atomic-scale by cross-sectional scanning tunneling microscopy. Finite elements calculations that model the outward relaxation of the cleaved surface were used to determine the indium composition profile of the wetting layer and the quantum dots prior and post rapid thermal annealing. The results show that the wetting layer is broadened upon annealing. This broadening could be modeled by assuming a random walk of indium atoms. Furthermore, we show that the stronger strain gradient at the location of the quantum dots enhances the intermixing. Photoluminescence measurements show a blueshift and narrowing of the photoluminescence peak. Temperature dependent photoluminescence measurements show a lower activation energy for the annealed sample. These results are in agreement with the observed change in morphology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770371]

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This is a research paper in which we discuss “active learning” in the light of Cultural-Historical Activity Theory (CHAT), a powerful framework to analyze human activity, including teaching and learning process and the relations between education and wider human dimensions as politics, development, emancipation etc. This framework has its origin in Vygotsky's works in the psychology, supported by a Marxist perspective, but nowadays is a interdisciplinary field encompassing History, Anthropology, Psychology, Education for example.