Temperature impact on the tunnel fet off-state current components
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
16/10/2013
16/10/2013
01/12/2012
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| Resumo |
In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications. (C) 2012 Elsevier Ltd. All rights reserved. CNPq FAPESP CNPq-FWO Brazil-Flanders |
| Identificador |
SOLID-STATE ELECTRONICS, OXFORD, v. 78, n. 1, Special Issue, pp. 141-146, DEC, 2012 0038-1101 http://www.producao.usp.br/handle/BDPI/35150 10.1016/j.sse.2012.05.053 |
| Idioma(s) |
eng |
| Publicador |
PERGAMON-ELSEVIER SCIENCE LTD OXFORD |
| Relação |
SOLID-STATE ELECTRONICS |
| Direitos |
openAccess Copyright PERGAMON-ELSEVIER SCIENCE LTD |
| Palavras-Chave | #TRIPLE GATE SOI TUNNEL FETS #OFF-STATE CURRENT COMPONENTS #TEMPERATURE #AMBIPOLAR BEHAVIOR #SRH #TAT #ENGINEERING, ELECTRICAL & ELECTRONIC #PHYSICS, APPLIED #PHYSICS, CONDENSED MATTER |
| Tipo |
article original article publishedVersion |
