3 resultados para FULLY DEPLETED (FD) TRANSISTOR

em Biblioteca Digital da Produção Intelectual da Universidade de São Paulo


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A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian spectra on the gate voltage is addressed in this paper, which is different to the constant behavior expected for bulk transistors. The shift in the corner frequency makes the characterization process easier. It helps to identify the energy position, capture cross sections, and densities of the traps. This characterization task is carried out considering noise measurements of two different candidate structures for single-transistor dynamic random access memory devices.

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One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar.

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Despite the great importance of soybeans in Brazil, there have been few applications of soybean crop modeling on Brazilian conditions. Thus, the objective of this study was to use modified crop models to estimate the depleted and potential soybean crop yield in Brazil. The climatic variable data used in the modified simulation of the soybean crop models were temperature, insolation and rainfall. The data set was taken from 33 counties (28 Sao Paulo state counties, and 5 counties from other states that neighbor São Paulo). Among the models, modifications in the estimation of the leaf area of the soybean crop, which includes corrections for the temperature, shading, senescence, CO2, and biomass partition were proposed; also, the methods of input for the model's simulation of the climatic variables were reconsidered. The depleted yields were estimated through a water balance, from which the depletion coefficient was estimated. It can be concluded that the adaptation soybean growth crop model might be used to predict the results of the depleted and potential yield of soybeans, and it can also be used to indicate better locations and periods of tillage.