Study of the processes occurring when sputtering YBa2Cu3O7-x in pure oxygen

The sputter deposition of YBa2Cu3O7-x in a de-diode was performed in pure oxygen medium and an optical spectroscopic study of the resultant discharge revealed strong emissions from both metal atoms and oxygen ions. Emission intensities were studied in pressure range from 0.5 to 3 mbar, with substrate temperatures from 150 to 850 degrees C. Raising the substrate temperature to 850 degrees C increased the number of positive ions and excited neutral atoms. Raising the pressure decreased the emission intensities of excited neutral and ionic species. The results have been compared with those obtained from Langmuir probe measurements. The rise in emission intensities of excited neutrals and ions with temperature suggested the possibility of chemically enhanced physical sputtering of YBa2Cu3O7-x. The effect of process conditions on film composition and quality is also discussed.

The sputtering temperature of a cooling cylindrical rod with an insulated core

By a standard application of Jones's method associated with the Wiener-Hopf technique an explicit solution is obtained for the temperature distribution inside a cylindrical rod with an insulated inner core when the rod is allowed to enter into a fluid of large extent with a uniform speed, and a simple integral expression is derived for the value of the sputtering temperature of the rod at the points of entry. Numerical results under certain special circumstances are also obtained and presented in the form of a table.

The sputtering temperature of a cooling cylindrical rod with an insulated core

By a standard application of Jones's method associated with the Wiener-Hopf technique an explicit solution is obtained for the temperature distribution inside a cylindrical rod with an insulated inner core when the rod is allowed to enter into a fluid of large extent with a uniform speed, and a simple integral expression is derived for the value of the sputtering temperature of the rod at the points of entry. Numerical results under certain special circumstances are also obtained and presented in the form of a table.

Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering

Thin films of ZrO2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior.

Superconducting Y--Ba--Cu--O Thin Films by RF Sputtering

Thin films of Y--Ba--Cu--O have been prepared by conventional methods of RF sputtering. The films exhibit superconducting onset temperatures as high as 91K, midpoint at 80K and a zero resistance state at 35K. Critical current measurements implied critical current densities of the order of 31 A/cm exp 2 . An attempt has been made to establish the role of substrate and various deposition parameters. 7 ref.--AA.

dc reactive magnetron sputtering of titanium‐structural and optical characterization of TiO2 films

This paper deals with the reactive sputtering of titanium in an argon and oxygen mixture. The variation in cathode potential as a function of oxygen partial pressure has been explained in terms of cathode poisoning effects. The titania films deposited during this process have been studied for their structural and optical characteristics. The effect of substrate temperature (from 25 to 400 °C) and annealing (from 250 to 700 °C) on the packing density, refractive index, extinction coefficient, and crystallinity has been investigated. The refractive index varied from 2.24 to 2.46 and extinction coefficient from 2.6 × 10-3 to 10.4× 10-3 at 500 nm as the substrate temperature increased from 25 to 400 °C. The refractive index increased from 2.19 to 2.35 and extinction coefficient changed from 3.2× 10-3 to 11.6 × 10-3 at 500 nm as the annealing temperature was increased from 250 to 700 °C. Anatase and rutile phases have been observed in the films deposited at 400 °C substrate temperature and annealed at 300 °C. The changes in the optical constants at higher substrate temperature have been attributed to an increase in packing density, oxygen content, and crystallinity of the films.

Effect of substrate temperature on the properties of ZrO2 films prepared by d.c. reactive magnetron sputtering

Studies of ZrO2 films prepared by d.c. reactive magnetron sputtering are described. The effects of substrate temperature on the packing density, refractive index, extinction coefficient and crystallinity phase have been investigated in the temperature range 25–450 °C. The refractive index varied from 1.84 to 1.95 and extinction coefficient from 2 × 10−3 to 9.6 × 10−3. This was explained on the basis of an increase in packing density from 0.686 to 0.813. The change in packing density has been attributed to a decrease in the oxygen condensation at higher temperatures. Annealing results in a decrease in refractive index and increase in extinction coefficient. The films deposited at 150 °C showed a monoclinic phase which transforms to a tetragonal phase at higher substrate temperatures.

Plasma diagnostics of the high pressure oxygen-sputtering process

The characteristics of the high pressure oxygen-sputtering plasma in the pressure range 0.8–2.4 mbar have been studied using the Langmuir probe technique. The variation in plasma parameters such as positive ion density, electron density, mean electron energy and floating potential with pressure and temperature has been investigated. It has been observed that the positive ion density increases at high substrate temperatures whereas the negative ion density decreases. The study of the variation in mean electron energy and floating potential also indicated the possibility that the number of negative ions is less when the substrates are at elevated temperatures. Since the negative ions are supposed to cause re-sputtering and make the films off-stoichiometric, the reduction in the negative ion density as observed at elevated substrate temperatures is better suited for depositing stoichiometric YBa2Cu3O7−δ superconducting thin films.

The sputtering temperature of a cooling cylindrical rod without and with an insulated core in a two-fluid medium

Utilising Jones' method associated with the Wiener-Hopf technique, explicit solutions are obtained for the temperature distributions on the surface of a cylindrical rod without an insulated core as well as that inside a cylindrical rod with an insulated inner core when the rod, in either of the two cases, is allowed to enter, with a uniform speed, into two different layers of fluid with different cooling abilities. Simple expressions are derived for the values of the sputtering temperatures of the rod at the points of entry into the respective layers, assuming the upper layer of the fluid to be of finite depth and the lower of infinite extent. Both the problems are solved through a three-part Wiener-Hopf problem of special type and the numerical results under certain special circumstances are obtained and presented in tabular forms.

Rapid thermal processed thin films of niobium pentoxide (Nb2 O5) deposited by reactive magnetron sputtering

Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

Process-kinetics in facing targets sputtering of multi-component oxide thin films

The kinetics of the processes in facing targets sputtering of multicomponent oxide films is presented. The novel configuration of the process exhibits an enhanced ionization efficiency. Discharge diagnostics performed using optical emission spectroscopy revealed strong dependence of plasma parameters on process conditions. Numerical simulation based on thermalization and diffusion of sputtered atoms has been performed to estimate the transport efficiency in off-axis mode. Composition, structure and epitaxial quality of YBa2Cu3O7-x films prepared was found to be strongly dependent on atomic flux ratios (of Cu/Y and Ba/Y) arriving at the substrate, resputtering effect and phase stability of YBa2Cu3O7-x These studies have been shown to be useful in understanding the complex processes that occur in sputtering of multicomponent films. (C) 1999 Elsevier Science S.A. All rights reserved.

Studies on the optimisation of unbalanced magnetron sputtering cathodes

The optimisation is reported on the design of unbalanced magnetron (UBM) sputtering cathodes. For the study, a planar circular cathode backed by a double-coil electromagnet (compatible for a 100 mm diameter target) was developed. The variation of the structure and strength of the magnetic field in front of the target was investigated for different current combinations in the electromagnetic coils, and its effect on the sputtering process was analysed. The observations on the magnetic field geometry revealed some interesting features, such as the balancing point of the fields along the axis (null-point), and the zero axial region over the target surface (B-z = 0 ring). The positions of both could be controlled by adjusting the ratio of the electric current in the coils. The magnetic field null-point could be used as a reference for the region of homogeneous film growth. The B-z = 0 ring was the location where the glow discharge concentrated (or where the maximum target erosion occurred). The diameter of the ring determined the area covered by the discharge and thus the sputtering efficiency. The optimum substrate position can be fixed according to the position of the null-point and optimisation of sputtering can be achieved by adjusting the diameter of the B-z = 0 ring. The results of this study should be helpful in the designing of an ideal UBM using permanent magnets as well as electromagnets. (C) 1999 Elsevier Science Ltd. All rights reserved.