RF Sputtered Er2O3 Thin Films as High-k Gate Dielectrics for Germanium MOS Devices

We report the material and electrical properties of Erbium Oxide (Er2O3) thin films grown on n-Ge (100) by RF sputtering. The properties of the films are correlated with the processing conditions. The structural characterization reveals that the films annealed at 550 degrees C, has densified as compared to the as-grown ones. Fixed oxide charges and interface charges, both of the order of 10(13)/cm(2) is observed.

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and at different substrate temperatures in the range 303 673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures?=?473 K were transformed into polycrystalline nature with anatase phase of TiO2. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO2. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO2/p-Si sandwich structure was fabricated and performed currentvoltage and capacitancevoltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8?x?10-6 to 5.4?x?10-8 A/cm2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright (c) 2012 John Wiley & Sons, Ltd.

Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

Titanium dioxide thin films were deposited by RF reactive magnetron sputtering technique on p-type silicon(100) substrates held at temperatures in the range 303-673 K. The influence of substrate temperature on the core level binding energies, chemical bonding configuration, crystallographic structure and dielectric properties was investigated. X-ray photoelectron spectroscopy studies and Fourier transform infrared transmittance data confirmed the formation of stoichiometric films with anatase phase at a substrate temperature of 673 K. The films formed at 303 K were nanocrystalline with amorphous matrix while those deposited at 673 K were transformed in to crystalline phase and growth of grains in pyramidal like structure as confirmed by X-ray diffraction and atomic force microscopy respectively. Metal-oxide-semiconductor capacitors were fabricated with the configuration of Al/TiO2/Si structures. The current voltage, capacitance voltage and conductance voltage characteristics were studied to understand the electrical conduction and dielectric properties of the MOS devices. The leakage current density (at gate voltage of 2 V) decreased from 2.2 x 10(-6) to 1.7 x 10(-7) A/cm(2), the interface trap density decreased from 1.2 x 10(13) to 2.1 x 10(12) cm(-2) eV(-1) and the dielectric constant increased from 14 to 36 with increase of substrate temperature from 303 to 673 K.

Performance Analysis of Strained Monolayer MoS2 MOSFET

We present a computational study on the impact of tensile/compressive uniaxial (epsilon(xx)) and biaxial (epsilon(xx) = epsilon(yy)) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrodinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.

Nature of Electronic States in Atomically Thin MoS(2) Field-Effect Transistors

We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states In all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below similar to 30 K, the conductivity displays oscillatory structures In gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges In the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without affecting the breakdown voltage. An improvement of 50% in R-ON and 45% in RF gain is achieved at 1 GHz. Large-signal time-domain analysis is done to explore the output power capability of the device.

Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor

We report the tunable dielectric constant of titania films with low leakage current density. Titanium dioxide (TiO2) films of three different thicknesses (36, 63 and 91 nm) were deposited by the consecutive steps of solution preparation, spin-coating, drying, and firing at different temperatures. The problem of poor adhesion between Si substrate and TiO2 insulating layer was resolved by using the plasma activation process. The surface roughness was found to increase with increasing thickness and annealing temperature. The electrical investigation was carried out using metal-oxide-semiconductor structure. The flat band voltage (V-FB), oxide trapped charge (Q(ot)), dielectric constant (kappa) and equivalent oxide thicknesses are calculated from capacitance-voltage (C-V) curves. The C-V characteristics indicate a thickness dependent dielectric constant. The dielectric constant increases from 31 to 78 as thickness increases from 36 to 91 nm. In addition to that the dielectric constant was found to be annealing temperature and frequency dependent. The films having thickness 91 nm and annealed at 600 A degrees C shows the low leakage current density. Our study provides a broad insight of the processing parameters towards the use of titania as high-kappa insulating layer, which might be useful in Si and polymer based flexible devices.

Sizable photocurrent and emission from solid state devices based on CdS nanoparticles

CdS nanoparticles exhibit size dependent optical and electrical properties. We report here the photocurrent and I-V characteristic studies of CdS nanoparticle devices. A sizable short circuit photocurrent was observed in the detection range governed by the size of the clusters. We speculate on the mechanisms leading to the photocurrent and emission in these nanometer scale systems.

Use of narrow-pore filters in He II transfer devices - new results

With the aim of finding simple methods for the fabrication of He II refilling devices, He II flow has been studied through filters made from various fine powders (oxides and metals, grain sizes in the range 0.05–2 μm) by compacting them under pressure. The results obtained for the different states of He II flow, especially in the “breakthrough” and “easy flow” range, are explained by the fountain effect, He II hydrodynamics and the choking effect. According to the results, pressedpowder filters can be classified into three groups with different flow characteristics, of which the “good transfer filters” with a behaviour neatly described by simple theory are suitable for use in He II refilling devices.

Low-intensity differential photocapacitance of MOS structures

Some new observations on the phenomenon of photocapacitane on n-type silicon MOS structures under low intensities of illumination are reported. The difference between the illuminated and dark C---characteristics is automatically followed as a function of the applied bias thereby obtaining the differential photocapacitance and the resulting characteristics has been termed as the Low Intensity Differential Photocapacitance (LIDP). For an MOS capacitor, the LIDP characteristics is seen to go through a well defined maximum. The phenomenon has been investigated under different ambient conditions like light intensity, temperature, dependance of the frequency of the light etc. and it has been found that the phenomenon is due to a band excband excitation. In this connection, a novel sensitive technique for the measurement of the capacitance based upon following the frequency changes of a tank circuit is also described in some detail. It is also shown that the phenomenon can be understood by a simple theoretical model.

A DLTS technique for surface state capture cross-section measurement of MOS diodes

A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence σn is inferred from data analysis. Temperature dependence of σn is shown to be consistent with the observed DLTS line shapes.

Resistance Noise in Graphene Based Field Effect Devices

We present a low-frequency electrical noise measurement in graphene based field effect transistors. For single layer graphene (SLG), the resistance fluctuations is governed by the screening of the charge impurities by the mobile charges. However, in case of Bilayer graphene (BLG), the electrical noise is strongly connected to its band structure, and unlike single layer graphene, displays a minimum when the gap between the conduction and valence band is zero. Using double gated BLG devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene

Oxides supported carbon air-electrodes for alkaline solution power devices

Porous carbon oxygen-reducing electrodes incorporated with perovskite oxide catalysts are reported. It has been possible to fabricate high-performance oxygen-reducing electrodes by introducing La0.5Sr0.5CoO3 and La0.99Sr0.01NiO3 with the activated coconut-shell charcoal; these electrodes could sustain load currents as high as 1 A cm−2 without serious degradation. A model to explain oxygen-reducing activity of these oxides has been proposed.

Proportional Weirs as Velocity Controlling Devices

Of the many factors that govern the settling phenomenon, the flow velocity in the settling tanks can be controlled favorably by fixing suitably designed weirs at the outlets of the tanks. The velocity at the bottom should not dislodge the particles that have already settled. These requirements might be met with by velocities which are controlled to be constant with respect to the depth of flow, or velocities which reduce linearly with increasing depth or velocities that vary inversely with the depth. To achieve these types of velocity control, new proportional weirs have been designed. Very near to the outlet of the tank, over a small length, the flow was found to be turbulent and noncompliant with the expected type of velocity control. This small length of the disturbance may be provided over and above the theoretical settling length of the tank, for efficient sedimentation.

Dynamics and control of buckling type devices using SMA wire integrated beam

An analysis and design study using Shape Memory Alloy (SMA) wire integrated beam and its buckling shape control are reported. The dynamical system performance is analyzed with a mathematical set-up involving nonlocal and rate sensitive kinetics of phase transformation in the SMA wire. A standard phenomenological constitutive model reported by Brinson (1993) is modified by considering certain consistency conditions in the material property tensors and by eliminating spurious singularity. Considering the inhomogeneity effects, a finite element model of the SMA wire is developed. Simulations are carried out to study the buckling shape control of a beam integrated with SMA wire.