A DLTS technique for surface state capture cross-section measurement of MOS diodes
| Data(s) |
01/05/1985
|
|---|---|
| Resumo |
A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence σn is inferred from data analysis. Temperature dependence of σn is shown to be consistent with the observed DLTS line shapes. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/20818/1/po.pdf Chandra, Mohan M and Kumar, Vikram (1985) A DLTS technique for surface state capture cross-section measurement of MOS diodes. In: Applications of Surface Science, 22-23 (2). pp. 1004-1010. |
| Publicador |
Elsevier Science |
| Relação |
http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6X3T-47WV4KC-6X-1&_cdi=7307&_user=512776&_orig=search&_coverDate=05%2F31%2F1985&_sk=999779999.7997&view=c&wchp=dGLbVzz-zSkWA&md5=9243f81975da07b627760265ec39baa3&ie=/sdarticle.pdf http://eprints.iisc.ernet.in/20818/ |
| Palavras-Chave | #Physics |
| Tipo |
Journal Article PeerReviewed |
