An Investigation into the Dependence of the Arc Voltage on the Parameters of the Short-Circuit Current and the Design of the Vacuum Interrupter

The vacuum interrupter is extensively employed in the medium voltage switchgear for the interruption of the short-circuit current. The voltage across the arc during current interruption is termed as the arc voltage. The nature and magnitude of this arc voltage is indicative of the performance of the contacts and the vacuum interrupter as a whole. Also, the arc voltage depends on the parameters like the magnitude of short-circuit current, the arcing time, the point of opening of the contacts, the geometry and area of the contacts and the type of magnetic field. This paper investigates the dependency of the arc voltage on some of these parameters. The paper also discusses the usefulness of the arc voltage in diagnosing the performance of the contacts.

Effect of fault resistance and grid short circuit MVA on impedance seen by distance relays on lines fed from wind turbine generating units (WTGU)

This paper deals with line protection challenges experienced in system having substantial wind generation penetration. Two types of WTGU: Doubly Fed (DFIG) and Squirrel Cage (SCIG) Induction Generators are simulated and connected to grid with single circuit transmission line. The paper summarizes analytical investigations carried out on the impedance seen by distance relays by varying fault resistances and grid short circuit MVA, for the protection of such transmission lines during faults. The results are also compared with systems having conventional synchronous machine connected to the grid.

Neural network approach for fault location in unbalanced distribution networks with limited measurements

This paper presents an Artificial Neural Network (ANN) approach for locating faults in distribution systems. Different from the traditional Fault Section Estimation methods, the proposed approach uses only limited measurements. Faults are located according to the impedances of their path using a Feed Forward Neural Networks (FFNN). Various practical situations in distribution systems, such as protective devices placed only at the substation, limited measurements available, various types of faults viz., three-phase, line (a, b, c) to ground, line to line (a-b, b-c, c-a) and line to line to ground (a-b-g, b-c-g, c-a-g) faults and a wide range of varying short circuit levels at substation, are considered for studies. A typical IEEE 34 bus practical distribution system with unbalanced loads and with three- and single- phase laterals and a 69 node test feeder with different configurations are considered for studies. The results presented show that the proposed approach of fault location gives close to accurate results in terms of the estimated fault location.

A novel free floating accelerometer force balance system for shock tunnel applications

In order to overcome the interference of the model mounting system with the external aerodynamics of the body during shock tunnel testing, a new free floating internally mountable balance system that ensures unrestrained model motion during testing has been designed, fabricated and tested. Minimal friction ball bearings are used for ensuring the free floating condition of the model during tunnel testing. The drag force acting on a blunt leading edge flat plate at hypersonic Mach number has been measured using the new balance system. Finite element model (FEM) and CFD are exhaustively used in the design as well as for calibrating the new balance system. The experimentally measured drag force on the blunt leading edge flat plate at stagnation enthalpy of 0.7 and 1.2 MJ/kg and nominal Mach number of 5.75 matches well with FEM results. The concept can also be extended for measuring all the three fundamental aerodynamic forces in short duration test facilities like free piston driven shock tunnels.

Sizable photocurrent and emission from solid state devices based on CdS nanoparticles

CdS nanoparticles exhibit size dependent optical and electrical properties. We report here the photocurrent and I-V characteristic studies of CdS nanoparticle devices. A sizable short circuit photocurrent was observed in the detection range governed by the size of the clusters. We speculate on the mechanisms leading to the photocurrent and emission in these nanometer scale systems.

Protection and Switching-Aid Networks for Transistor Bridge Inverters

The present trend in the industry is towards the use of power transistors in the development of efficient Pulsewidth Modulated (PWM) inverters, because of their operation at high frequency, simplicity of turn-off, and low commutation losses compared to the technology using thyristors. But the protection of power transistors, minimization of switching power loss, and design of base drive circuit are very important for a reliable operation of the system. The requirements, analysis, and a simplified procedure for calculation of the switching-aid network components are presented. The transistor is protected against short circuit using a modified autoregulated and autoprotection drive circuit. The experimental results show that the switching power loss and voltage stress in the device can be reduced by suitable choice of the switching-aid network component values.

A Comparative Study of the Effect of Metallic Au and ReO3 Nanoparticles on the Performance of Silicon Solar Cells

The influence of gold (similar to 35 nm diameter) as well as ReO3 (similar to 17 nm diameter) nanoparticles placed atop silicon photovoltaic devices on absorption and photocurrent generation has been investigated. The nanoparticles improve the power transmission into the semiconductor and consequently, the photocurrent response at wavelengths corresponding to plasmon absorption. An increase in short circuit current up to 4.5% under simulated solar irradiation was observed with the ReO3 nanoparticles, while the gold nanoparticles showed enhancements up to 6.5%. The increase in photocurrent is observed at wavelengths corresponding to the maxima in the surface plasmon resonance absorption spectra. (C) 2010 The Japan Society of Applied Physics

Antireflection properties of indium tin oxide (ITO) on silicon for photovoltaic applications

The short‐circuit current density (Jsc) of indium tin oxide (ITO/silicon solar cells has been shown both theoretically and experimentally to be a function of the thickness of the ion beam sputtered ITO layer. These results can be accounted for by computing the optical reflection from the ITO/silicon interface.

V-CE Sensing for IGBT Protection in NPC Three Level Converters-Causes For Spurious Trippings and Their Elimination

Neutral point clamped (NPC), three level converters with insulated gate bipolar transistor devices are very popular in medium voltage, high power applications. DC bus short circuit protection is usually done, using the sensed voltage across collector and emitter (i.e., V-CE sensing), of all the devices in a leg. This feature is accommodated with the conventional gate drive circuits used in the two level converters. The similar gate drive circuit, when adopted for NPC three level converter protection, leads to false V-CE fault signals for inner devices of the leg. The paper explains the detailed circuit behavior and reasons, which result in the occurrence of such false V-CE fault signals. This paper also illustrates that such a phenomenon shows dependence on the power factor of the supplied three-phase load. Finally, experimental results are presented to support the analysis. It is shown that the problem can be avoided by blocking out the V-CE sense fault signals of the inner devices of the leg.

Study of voltage collapse at converter bus in asynchronous MTDC-AC systems

This paper presents the analysis and study of voltage collapse at any converter bus in an AC system interconnected by multiterminal DC (MTDC) links. The analysis is based on the use of the voltage sensitivity factor (VSF) as a voltage collapse proximity indicator (VCPI). In this paper the VSF is defined as a matrix which is applicable to MTDC systems. The VSF matrix is derived from the basic steady state equations of the converter, control, DC and AC networks. The structure of the matrix enables the derivation of some of the basic properties which are generally applicable. A detailed case study of a four-terminal MTDC system is presented to illustrate the effects of control strategies at the voltage setting terminal (VST) and other terminals. The controls considered are either constant angle, DC voltage, AC voltage, reactive current and reactive power at the VST and constant power or current at the other terminals. The effect of the strength of the AC system (measured by short circuit ratio) on the VSF is investigated. Several interesting and new results are presented. An analytical expression for the self VSF at VST is also derived for some specific cases which help to explain the number of transitions in VSF around the critical values of SCR.

Dynamic analysis of voltage instability in AC-DC systems

This paper presents the analysis and study of voltage collapse at any converter bus in A C-DC systems considering the dynamics of DC system. The problem of voltage instability is acute when HVDC links are connected to weak AC systems, the strength determined by short circuit ratio (SCR) at the converter bus. The converter control strategies are important in determining voltage instability. Small signal analysis is used to identify critical modes and evaluate the effect of AC system strength and control parameters. A sample two-terminal DC system is studied and the results compared with those obtained from static analysis. Also, the results obtained from small signal analysis are validated with nonlinear simulation.

A low power, process invariant keeper design for high speed dynamic logic circuits

A low power keeper circuit using the concept of rate sensing has been proposed. The proposed technique reduces the amount of short circuit power dissipation in the domino gate by 70% compared to the conventional keeper technique. Also the total power-delay product is 26% lower compared to the previously reported techniques. The process tracking capability of the design enables the domino gate to achieve uniform delay across different process corners. This reduces the amount of short circuit power dissipation that occurs in the cascaded domino gates by 90%. The use of the proposed technique in the read path of a register file reduces the energy requirement by 26% as compared to the other keeper techniques. The proposed technique has been prototyped in 130nm CMOS technology.

Dye sensitized solar cell based on platinum decorated multiwall carbon nanotubes as catalytic layer on the counter electrode

In this study we have employed multiwall carbon nanotubes (MWCNT), decorated with platinum as catalytic layer for the reduction of tri-iodide ions in dye sensitized solar cell (DSSC). MWCNTs have been prepared by a simple one step pyrolysis method using ferrocene as the catalyst and xylene as the carbon source. Platinum decorated MWCNTs have been prepared by chemical reduction method. The as prepared MWCNTs and Pt/MWCNTs have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In combination with a dye adsorbed TiO(2) photoanode and an organic liquid electrolyte, Pt/MWCNT composite showed an enhanced short circuit current density of 16.12 mA/cm(2) leading to a cell efficiency of 6.50% which is comparable to that of Platinum. (C) 2011 Elsevier Ltd. All rights reserved.

A low cost approach for the fabrication of microwave phase shifter on laminates

This paper presents a simple and low cost fabrication approach using extended printed circuit board processing techniques for an electrostatically actuated phase shifter on a common microwave laminate. This approach uses 15 mu m thin copper foils for realizing the bridge structures as well as for a spacer. A polymeric thin film deposited by spin coating and patterned using lithographic process is used as a dielectric layer to improve the reliability of the device. The prototype of the phase shifter for X-band operation is fabricated and tested for electrical and electromechanical performance parameters. The realized devices have a figure of merit of 70 degrees/dB for a maximum applied bias potential of 85 V. Since these phase shifters can be conveniently fabricated directly on microwave substrates used for feed distribution networks of phased arrays, the overall addition in cost, dimensions and processing for including these phase shifters in these arrays is minimal.