133 resultados para BREAKDOWN

em Indian Institute of Science - Bangalore - Índia


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This paper describes a new analysis of the avalanche breakdown phenomenon in bipolar transistors for different bias conditions of the emitter-base junction. This analysis revolves around the transportation and storage of majority carriers in the base region. Using this analysis one can compute all the voltage-current characteristics of a transistor under avalanche breakdown.

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Experimental results for breakdown voltage of sodium vapour measured for the first time using coaxial cylindrical electrodes of fixed gap distance (5 mm) and pressure (corrected to2 0 "C) in the range2 1 to 652 Pa are reported, and are founfdo l ltoow Paschen's Law. The investigations also reveal that V th-Ie characteristics are pressure dependent; the current during the breakdown and the buoifl dc-uurpre nt after a breakdoiws nei ther positive or negative. in spite of the central cylinder being always maintained at a positive potential

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It has been shown that it is possible to extend the validity of the Townsend breakdown criterion for evaluating the breakdown voltages in the complete pd range in which Paschen curves are available. Evaluation of the breakdown voltages for air (pd=0.0133 to 1400 kPa · cm), N2(pd=0.0313 to 1400 kPa · cm) and SF6 (pd=0.3000 to 1200 kPa · cm) has been done and in most cases the computed values are accurate to ±3% of the measured values. The computations show that it is also possible to estimate the secondary ionization coefficient ¿ in the pd ranges mentioned above.

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In this paper we report the analysis of dc breakdown tests on mixtures of CC12F2, SF6, C-C4F8, 2-C4F8, N2, C02, CF4, CHF3, and 1,1,1-CH3CF3 gases on the basis of the NKH formula Vmix=k(pd)aNbUC developed by us earlier for the binary mixtures of SF6 with air, N2, N20, and CO2. It is shown that while a and c have the values 0.915 and 0.850 respectively as earlier, k and b depend on the component gases. There is a good agreement between the calculated values on the basis of the formula and measured values reported in the literature.

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In this paper we report the analysis of dc breakdown tests on mixtures of CC12F2, SF6, C-C4F8, 2-C4F8, N2, C02, CF4, CHF3, and 1,1,1-CH3CF3 gases on the basis of the NKH formula Vmix=k(pd)aNbUC developed by us earlier for the binary mixtures of SF6 with air, N2, N20, and CO2. It is shown that while a and c have the values 0.915 and 0.850 respectively as earlier, k and b depend on the component gases. There is a good agreement between the calculated values on the basis of the formula and measured values reported in the literature.

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We present an analysis of the breakdown of the most probable approximation to the Mayer cluster size distribution for clusters of size comparable to the size of the system. This failure is illustrated by considering an ideal Bose gas for which exact volume dependent reducible cluster integrals are available.

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A simple equation to predict the breakdown voltages for binary mixtures (Vmix) of electronegative gases (SF6, CCl2F2) and buffer gases (N2, N2O, CO2, air) under uniform electric field has been proposed. Values of Vmix evaluated using this equation for mixtures of SF6-N2, SF6-air, SF6-N2O, SF6-CO2 and CCl2F2-N2 over a wide range of pd show an excellent agreement with the experimentally measured data available in the literature.

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The sparking potentials and swarm coefficients (ionization and attachment coefficients) have been measured in sulphurhexafluoride- air and freon-nitrogen mixtures over the range of 110 ¿ E/p ¿ 240 V cm-1 torr-l and gas pressures varying between 1 and 20 torr, at 20°C. Addition of strongly attaching salphur-hexafluoride and freon gases increased the sparking potentials and the rate of increase of the attachment coefficient with increasing percentage of the strongly attaching gases in the mixtures was much larger than the rate of change of the first ionization coefficient.

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Practical applications of vacuum as an insulator necessitated determining the low-pressure breakdown characteristics of long gap lengths of a point-plane electrode system. The breakdown voltage has been found to vary as the square root of the gap length. Further, with the point electrode as the anode, the values of the breakdown voltages obtained have been found to be larger than those obtained with a plane-parallel electrode system at a corresponding gap length. By applying the theory of the anode heating mechanism as the cause for breakdown, the results have been justified, and by utilizing a field efficiency factor which is the ratio of the average to maximum field, an empirical criterion has been developed. This criterion helps in calculating the breakdown voltage of a nonuniform gap system by the knowledge of the breakdown voltage of a plane-parallel electrode system.

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The V-I characteristic of a p-n junction under breakdown is calculated taking the thermally generated carriers into account. The current density distributions computed under different conditions have been given. The light emission and other characteristics reported by Chiang and Lauritzen and others have been explained.

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The insulation in a dc cable is subjected to both thermal and electric stress at the same time. While the electric stress is generic to the cable, the temperature rise in the insulation is, by and large, due to the Ohmic losses in the conductor. The consequence of this synergic effect is to reduce the maximum operating voltage and causes a premature failure of the cable. The authors examine this subject in some detail and propose a comprehensive theoretical formulation relating the maximum thermal voltage (MTV) to the physical and geometrical parameters of the insulation. The heat flow patterns and boundary conditions considered by the authors here and those found in earlier literature are provided. The MTV of a dc cable is shown to be a function of the load current apart from the resistance of the insulation. The results obtained using the expressions, developed by the authors, are compared with relevant results published in the literature and found to be in close conformity.

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An inductive behaviour observed in germanium p-n junctions in the breakdown region is reported.

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Results of measurements at a high frequency on reverse bias capacitance of copper-doped germanium junctions are reported. Phenomenal increase in capacitance is found in the breakdown region, particularly at low temperatures.

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A study of the gap breakdown voltage characteristic at a low pressure of 7×10-5 Torr with a standard (1/50)-μsec impulse-voltage wave reveals an agreement with the criterion Vb=Cd0.5 suggested by Cranberg. Voltage-time-to-breakdown characteristics has also been determined. From these studies, it is concluded that impulse breakdown in vacuum is initiated by an electron current heating an anode spot and thereby liberating a clump which causes breakdown.