Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region
Data(s) |
17/06/1968
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Resumo |
Results of measurements at a high frequency on reverse bias capacitance of copper-doped germanium junctions are reported. Phenomenal increase in capacitance is found in the breakdown region, particularly at low temperatures. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/27730/1/61.pdf Mahadevan, S and Suryan, G (1968) Reverse bias capacitance measurements on copper-doped germanium p-n junctions in the breakdown region. In: Physics Letters A, 27 (3). pp. 149-150. |
Publicador |
Elsevier Science |
Relação |
http://dx.doi.org/10.1016/0375-9601(68)91175-4 http://eprints.iisc.ernet.in/27730/ |
Palavras-Chave | #Physics |
Tipo |
Journal Article PeerReviewed |