Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers
| Data(s) |
01/05/1977
|
|---|---|
| Resumo |
The V-I characteristic of a p-n junction under breakdown is calculated taking the thermally generated carriers into account. The current density distributions computed under different conditions have been given. The light emission and other characteristics reported by Chiang and Lauritzen and others have been explained. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/24562/1/2.pdf Zarab, MJ and Satyam, M (1977) Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers. In: Solid-State Electronics, 20 (5). pp. 407-412. |
| Publicador |
Elsevier Science |
| Relação |
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TY5-46VMB5J-1Y&_user=512776&_rdoc=1&_fmt=&_orig=search&_sort=d&_docanchor=&view=c&_acct=C000025298&_version=1&_urlVersion=0&_userid=512776&md5=2121fcbce0f83a9d79f00bf0f19bccd7 http://eprints.iisc.ernet.in/24562/ |
| Palavras-Chave | #Electrical Communication Engineering |
| Tipo |
Journal Article PeerReviewed |
