17 resultados para Atomic system

em Indian Institute of Science - Bangalore - Índia


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We present the results of a theoretical study of a four-level atomic system in vee + ladder configuration using a density matrix analysis. The absorption and dispersion profiles are derived for a weak probe field and for varying strengths of the two strong control fields. For specificity, we choose energy levels of Rb-87, and present results for both stationary atoms and moving atoms in room temperature vapor. An electromagnetically induced absorption (EIA) peak with negative dispersion is observed at zero probe de-tuning when the control fields have equal strengths, which switches to electromagnetically induced transparency (ET) with positive dispersion (due to splitting of the EIA peak) when the control fields are unequal. There is significant linewidth narrowing in thermal vapor. (C) 2015 Elsevier B.V. All rights reserved.

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Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors.

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Tracer diffusion coefficients are calculated in different phases in the Mo-Si system from diffusion couple experiments using the data available on thermodynamic parameters. Following, possible atomic diffusion mechanism of the species is discussed based on the crystal structure. Unusual diffusion behaviour is found in the Mo(5)Si(3) and Mo(3)Si phases, which indicate the nature of defects present on different sublattices. Further the growth mechanism of the phases is discussed and morphological evolution during interdiffusion is explained. (C) 2011 Elsevier Ltd. All rights reserved.

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Study of interdiffusion in the Co-Mo system is important to understand the performance of turbine blades in jet engine applications. Mo is added to superalloys to increase the solid solution strengthening and the creep resistance. In this study, the interdiffusion coefficient in the Co(Mo) solid solution and impurity diffusion coefficient of Mo in Co are determined. Further, the activation energy and pre-exponential factors are calculated, which provide an idea about the atomic mechanism of diffusion.

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The optimum values of the solution parameters of a multiparameter integral free-energy function have been determined using experimental data from the Ga-Sb system. The equation is represented as DELTAG(xs) = x(1 - x)[(1 - x)(a1 + a2T + a3T ln T) + x(a4 + a5T + a6T ln T) + x(1 - x)(a7 + a8T + a9xT)].The integral and the corresponding partial form of the free energy function have been found to be of use when interpreting the high temperature thermodynamic data, atomic interactions and phase equilibria in the Ga-Sb system.

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The integrated diffusion coefficient of the phases and the tracer diffusion coefficients of the species are determined in the Nb-Si system by the diffusion couple technique. The diffusion rate of Si is found to be faster than that of Nb in both the NbSi2 and Nb5Si3 phases. The possible atomic mechanism of diffusion is discussed based on the crystal structure and on available details of the defect concentration data. The faster diffusion rate of Si in the Nb5Si3 phase is found to be unusual. The growth mechanism of the phases is also discussed on the basis of the data calculated in this study. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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Glassy B&, the parent compound of the superionic conductor LiI-Li&B& has been studied by the molecular dynamics technique using a new potential model. The results suggest that the glass is made up of local units of four-membered B2S2 rings bridged by sulfur atoms, leading to a chainlike structure. Various pair correlation functions have been analyzed, and the B2Sz rings have been found to be planar. The calculated neutron structure factor shows a peak at 1.4 A-' which has been attributed to B-B correlations at 5.6 A. The glass transition temperature of the simulated system has been calculated to be around 800 K.

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In this paper, we propose a new token-based distributed algorithm for total order atomic broadcast. We have shown that the proposed algorithm requires lesser number of messages compared to the algorithm where broadcast servers use unicasting to send messages to other broadcast servers. The traditional method of broadcasting requires 3(N - 1) messages to broadcast an application message, where N is the number of broadcast servers present in the system. In this algorithm, the maximum number of token messages required to broadcast an application message is 2N. For a heavily loaded system, the average number of token messages required to broadcast an application message reduces to 2, which is a substantial improvement over the traditional broadcasting approach.

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We observe linewidths below the natural linewidth for a probe laser on a degenerate two-level F -> F' transition, when the same transition is driven by a strong control laser. We take advantage of the fact that each level of the transition is made of multiple magnetic sublevels, and use the phenomenon of electromagnetically induced transparency (EIT) or absorption ( EIA) in multilevel systems. Optical pumping by the control laser redistributes the population so that only a few sublevels contribute to the probe absorption, an explanation which is verified by a density-matrix analysis of the relevant sublevels. We observe more than a factor of 3 reduction in linewidth in the D(2) line of Rb in room-temperature vapor. Such subnatural features vastly increase the scope of applications of EIT, such as high-resolution spectroscopy and tighter locking of lasers to atomic transitions, since it is not always possible to find a suitable third level. (C) 2011 Elsevier B.V. All rights reserved.

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Growth mechanism of phases and atomic mechanism of diffusion are discussed in the Pd-Sn system. The Kirkendall marker plane location indicates that the PdSn4 phase grows because of diffusion of Sn. Atomic arrangement in the crystal indicates that Sn can diffuse through its own sublattice but Pd cannot diffuse unless antisites are present. The negligible diffusion of Pd indicates the absence of Pd antisites. The activation energy value indicates that the contribution from grain boundary diffusion cannot be neglected although experiments were conducted in the homologous temperature range of 0.7-0.79.

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A compact scanning head for the Atomic Force Microscope (AFM) greatly enhances the portability of AFM and facilitates easy integration with other tools. This paper reports the design and development of a three-dimensional (3D) scanner integrated into an AFM micro-probe. The scanner is realized by means of a novel design for the AFM probe along with a magnetic actuation system. The integrated scanner, the actuation system, and their associated mechanical mounts are fabricated and evaluated. The experimentally calibrated actuation ranges are shown to be over 1 mu m along all the three axes. (c) 2013 AIP Publishing LLC.

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We present a theoretical model using a density matrix approach to show the influence of multiple excited states on the optical properties of an inhomogeneously broadened Lambda V-system of the Rb-87 D2 line. These closely spaced multiple excited states cause asymmetry in absorption and dispersion profiles. We observe the reduced absorption profiles, due to dressed state interactions of the applied electromagnetic fields, which results the Mollow sideband-like transparency windows. In a room temperature vapor, we obtain a narrow enhanced absorption and steep positive dispersion at the line center when the strengths of control and pump fields are equal. Here, we show how the probe transmittance varies when it passes through the atomic medium. We also discuss the transient behavior of our system which agrees well with the corresponding absorption and dispersion profiles. This study has potential applications in controllability of group velocity, and for optical and quantum information processing.

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Direct measurement of three-dimensional (3-D) forces between an atomic force microscope (AFM) probe and the sample benefits diverse applications of AFM, including force spectroscopy, nanometrology, and manipulation. This paper presents the design and evaluation of a measurement system, wherein the deflection of the AFM probe is obtained at two points to enable direct measurement of all the three components of 3-D tip-sample forces in real time. The optimal locations for measurement of deflection on the probe are derived for a conventional AFM probe. Further, a new optimal geometry is proposed for the probe that enables measurement of 3-D forces with identical sensitivity and nearly identical resolution along all three axes. Subsequently, the designed measurement system and the optimized AFM probe are both fabricated and evaluated. The evaluation demonstrates accurate measurement of tip-sample forces with minimal cross-sensitivities. Finally, the real-time measurement system is employed as part of a feedback control system to regulate the normal component of the interaction force, and to perform force-controlled scribing of a groove on the surface of polymethyl methacrylate.

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Quantum wires with spin-orbit coupling provide a unique opportunity to simultaneously control the coupling strength and the screened Coulomb interactions where new exotic phases of matter can be explored. Here we report on the observation of an exotic spin-orbit density wave in Pb-atomic wires on Si(557) surfaces by mapping out the evolution of the modulated spin-texture at various conditions with spin-and angle-resolved photoelectron spectroscopy. The results are independently quantified by surface transport measurements. The spin polarization, coherence length, spin dephasing rate and the associated quasiparticle gap decrease simultaneously as the screened Coulomb interaction decreases with increasing excess coverage, providing a new mechanism for generating and manipulating a spin-orbit entanglement effect via electronic interaction. Despite clear evidence of spontaneous spin-rotation symmetry breaking and modulation of spin-momentum structure as a function of excess coverage, the average spin polarization over the Brillouin zone vanishes, indicating that time-reversal symmetry is intact as theoretically predicted.

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Electrochemical exfoliation technique using the pyrophosphate anion derived from tetra sodium pyrophosphate was employed to produce graphene. As-synthesized graphene was then drop dried over a cold rolled Cu sheet. Ni coating was then electrodeposited over bare Cu and graphene-Cu substrates. Both substrates were then isothermally annealed at 800 degrees C for 3 h. WDS analysis showed substantial atomic diffusion in annealed Ni-Cu sample. Cu-graphene-Ni sample, on the other hand, showed negligible diffusion illustrating the diffusion barrier property of the graphene coating. (C) 2016 Elsevier B.V. All rights reserved.